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Nanomaterials
Special Issues
Creating a Light Source with Nanomaterials and Nanophotonic Strategies
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Creating a Light Source with Nanomaterials and Nanophotonic Strategies

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanophotonics Materials and Devices".

Deadline for manuscript submissions: closed (12 December 2022) | Viewed by 2964

Special Issue Editor

Prof. Dr. Qianpeng Zhang

E-Mail Website
Guest Editor
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hongkong, China
Interests: nanophotonics; nanowires; light-emitting diodes

Special Issue Information

Dear Colleagues,

Lighting and display are two major applications closely related to our daily life. Using nanomaterials and nanophotonic strategies, highly efficient light sources with unique optical properties can be acquired. In this Special Issue on “Creating a Light Source with Nanomaterials and Nanophotonic Strategies”, we invite worldwide researchers to share their experience and latest research progress in advanced optoelectronic applications, such as LEDs, lasers, and LCDs. This Special Issue focuses on but is not limited to exceptional nanomaterials of the following categories: nanocrystals, nanowires, quantum dots, and quantum wells. Insight into both fundamental physical understandings and high-performance device applications will be included. Discussions on special mechanisms, e.g., light–matter interaction, photon management, plasmonics, nonlinear absorption process, and so on, are also encouraged. Particularly, we urge more discussions on the device operational stability issues of novel materials such as perovskites, along with their high external quantum efficiencies. We sincerely hope this Special Issue will trigger more research interest in creating light sources with nanomaterials and nanophotonic strategies.

Prof. Dr. Qianpeng Zhang
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • LEDs
  • lasers
  • LCDs
  • nanocrystals
  • nanowires
  • quantum dots
  • quantum wells

Published Papers (2 papers)

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Research

9 pages, 7176 KiB  
Communication
A Low-Cost Synthetic Route of FAPbI3 Quantum Dots in Air at Atmospheric Pressure: The Role of Zinc Iodide Additives
by Shuo Wang, Simiao Li and Qian Zhao
Nanomaterials 2023, 13(2), 226; https://doi.org/10.3390/nano13020226 - 4 Jan 2023
Cited by 1 | Viewed by 2002
Abstract
Perovskite quantum dots (PQDs) have shown great promise in optoelectronic device applications. Typically, a traditional hot-injection method with heating and high vacuum pressure is used to synthesize these colloidal nanoparticles. In this article, we report a low-cost synthetic method for FAPbI3 PQDs [...] Read more.
Perovskite quantum dots (PQDs) have shown great promise in optoelectronic device applications. Typically, a traditional hot-injection method with heating and high vacuum pressure is used to synthesize these colloidal nanoparticles. In this article, we report a low-cost synthetic method for FAPbI3 PQDs in air at atmospheric pressure with the assistance of ZnI2. Compared with the FAPbI3 PQDs synthesized under vacuum/N2 condition, the air-synthesized Zn:FAPbI3 PQDs exhibit the same crystalline structure with a similar preferential crystallographic orientation but demonstrate higher colloidal stability and higher production yield. Furthermore, we examine the influence of ZnI2 during the synthesis process on morphologies and optoelectronic properties. The results show that the mean size of the obtained FAPbI3 PQDs is decreased by increasing the amount of added ZnI2. More importantly, introducing an optimal amount of ZnI2 into the Pb source precursor enables increasing the carrier lifetime of FAPbI3 PQDs, showing the potential beneficial effect on device performance. Full article
(This article belongs to the Special Issue Creating a Light Source with Nanomaterials and Nanophotonic Strategies)
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Graphical abstract

16 pages, 4469 KiB  
Article
Fabrication and Characterization of a Self-Powered n-Bi2Se3/p-Si Nanowire Bulk Heterojunction Broadband Photodetector
by Xuan Wang, Yehua Tang, Wanping Wang, Hao Zhao, Yanling Song, Chaoyang Kang and Kefan Wang
Nanomaterials 2022, 12(11), 1824; https://doi.org/10.3390/nano12111824 - 26 May 2022
Cited by 3 | Viewed by 1830
Abstract
In the present study, vacuum evaporation method is used to deposit Bi2Se3 film onto Si nanowires (NWs) to form bulk heterojunction for the first time. Its photodetector is self-powered, its detection wavelength ranges from 390 nm to 1700 nm and [...] Read more.
In the present study, vacuum evaporation method is used to deposit Bi2Se3 film onto Si nanowires (NWs) to form bulk heterojunction for the first time. Its photodetector is self-powered, its detection wavelength ranges from 390 nm to 1700 nm and its responsivity reaches its highest value of 84.3 mA/W at 390 nm. In comparison to other Bi2Se3/Si photodetectors previously reported, its infrared detection length is the second longest and its response speed is the third fastest. Before the fabrication of the photodetector, we optimized the growth parameter of the Bi2Se3 film and the best Bi2Se3 film with atomic steps could finally be achieved. The electrical property measurement conducted by the physical property measurement system (PPMS) showed that the grown Bi2Se3 film was n-type conductive and had unique topological insulator properties, such as a metallic state, weak anti-localization (WAL) and linear magnetic resistance (LMR). Subsequently, we fabricated Si NWs by the metal-assisted chemical etching (MACE) method. The interspace between Si NWs and the height of Si NWs could be tuned by Ag deposition and chemical etching times, respectively. Finally, Si NWs fabricated with the Ag deposition time of 60 s and the etching time of 10 min was covered by the best Bi2Se3 film to be processed for the photodetector. The primary n-Bi2Se3/p-Si NWs photodetector that we fabricated can work in a self-powered mode and it has a broadband detection range and fast response speed, which indicates that it can serve as a promising silicon-based near- and mid-infrared photodetector. Full article
(This article belongs to the Special Issue Creating a Light Source with Nanomaterials and Nanophotonic Strategies)
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