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High-Performance CMOS Image Sensors
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High-Performance CMOS Image Sensors

A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Optical Sensors".

Deadline for manuscript submissions: closed (31 December 2020) | Viewed by 14295

Special Issue Editors

Prof. Stanislaw Szczepanski

E-Mail Website
Guest Editor
Head of Department of Microelectronic Systems, Faculty of Electronics, Telecommunications and Informatics, Gdańsk University of Technology, Gdańsk, Poland
Interests: design of analog and analog-digital integrated circuits and systems; low-power CMOS integrated filter design for low and high-frequency applications
Dr. Grzegorz Blakiewicz

E-Mail Website
Guest Editor
Faculty of Electronics, Telecommunications and Informatics, Gdańsk University of Technology, Gdańsk, Poland
Interests: CMOS image sensors; 3D integration; vision processors; noise compensation and reduction in CMOS integrated circuits; low drop voltage regulators; wireless supply systems
Dr. Waldemar Jendernalik

E-Mail Website
Guest Editor
Faculty of Electronics, Telecommunications and Informatics, Gdańsk University of Technology, Gdańsk, Poland
Interests: CMOS image sensors; vision chips; 3D integration; analog circuits; low-power circuits

Special Issue Information

Dear Colleagues,

Image sensors are widely used in medicine, biology, environmental monitoring, and many other engineering fields. High demands on modern sensors require increasingly advanced solutions with unique photodetectors and embedded preprocessing. Improving the performance of CMOS image sensors involves the application of innovative photodetectors, e.g., single-photon avalanche diodes and sophisticated 3D integration, which requires the development of new packaging techniques and solutions in CMOS integrated circuits. From the perspective of modern electronics applications, CMOS technology offers a cost-effective, fully-on-chip implementation of advanced image sensors.

This Special Issue is dedicated to presenting new trends and developments in advanced CMOS image sensors as well as their innovative applications in various fields.

Prof. Stanislaw Szczepanski
Dr. Grzegorz Blakiewicz
Dr. Waldemar Jendernalik
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Sensors is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • CMOS image sensor (CIS)
  • CMOS imager
  • Vision chip
  • Single-photon avalanche diode (SPAD)
  • 3D integration
  • Contact imaging
  • Environmental monitoring
  • Measuring particulate matter
  • DNA detection
  • Fluorescence imaging

Published Papers (2 papers)

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Research

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18 pages, 3741 KiB  
Article
Reduction of Dark Current in CMOS Image Sensor Pixels Using Hydrocarbon-Molecular-Ion-Implanted Double Epitaxial Si Wafers
by Ayumi Onaka-Masada, Takeshi Kadono, Ryosuke Okuyama, Ryo Hirose, Koji Kobayashi, Akihiro Suzuki, Yoshihiro Koga and Kazunari Kurita
Sensors 2020, 20(22), 6620; https://doi.org/10.3390/s20226620 - 19 Nov 2020
Cited by 9 | Viewed by 3828
Abstract
The impact of hydrocarbon-molecular (C3H6)-ion implantation in an epitaxial layer, which has low oxygen concentration, on the dark characteristics of complementary metal-oxide-semiconductor (CMOS) image sensor pixels was investigated by dark current spectroscopy. It was demonstrated that white spot defects [...] Read more.
The impact of hydrocarbon-molecular (C3H6)-ion implantation in an epitaxial layer, which has low oxygen concentration, on the dark characteristics of complementary metal-oxide-semiconductor (CMOS) image sensor pixels was investigated by dark current spectroscopy. It was demonstrated that white spot defects of CMOS image sensor pixels when using a double epitaxial silicon wafer with C3H6-ion implanted in the first epitaxial layer were 40% lower than that when using an epitaxial silicon wafer with C3H6-ion implanted in the Czochralski-grown silicon substrate. This considerable reduction in white spot defects on the C3H6-ion-implanted double epitaxial silicon wafer may be due to the high gettering capability for metallic contamination during the device fabrication process and the suppression effects of oxygen diffusion into the device active layer. In addition, the defects with low internal oxygen concentration were observed in the C3H6-ion-implanted region of the double epitaxial silicon wafer after the device fabrication process. We found that the formation of defects with low internal oxygen concentration is a phenomenon specific to the C3H6-ion-implanted double epitaxial wafer. This finding suggests that the oxygen concentration in the defects being low is a factor in the high gettering capability for metallic impurities, and those defects are considered to directly contribute to the reduction in white spot defects in CMOS image sensor pixels. Full article
(This article belongs to the Special Issue High-Performance CMOS Image Sensors)
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Review

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50 pages, 26028 KiB  
Review
CMOS Image Sensors in Surveillance System Applications
by Susrutha Babu Sukhavasi, Suparshya Babu Sukhavasi, Khaled Elleithy, Shakour Abuzneid and Abdelrahman Elleithy
Sensors 2021, 21(2), 488; https://doi.org/10.3390/s21020488 - 12 Jan 2021
Cited by 26 | Viewed by 9478
Abstract
Recent technology advances in CMOS image sensors (CIS) enable their utilization in the most demanding of surveillance fields, especially visual surveillance and intrusion detection in intelligent surveillance systems, aerial surveillance in war zones, Earth environmental surveillance by satellites in space monitoring, agricultural monitoring [...] Read more.
Recent technology advances in CMOS image sensors (CIS) enable their utilization in the most demanding of surveillance fields, especially visual surveillance and intrusion detection in intelligent surveillance systems, aerial surveillance in war zones, Earth environmental surveillance by satellites in space monitoring, agricultural monitoring using wireless sensor networks and internet of things and driver assistance in automotive fields. This paper presents an overview of CMOS image sensor-based surveillance applications over the last decade by tabulating the design characteristics related to image quality such as resolution, frame rate, dynamic range, signal-to-noise ratio, and also processing technology. Different models of CMOS image sensors used in all applications have been surveyed and tabulated for every year and application. Full article
(This article belongs to the Special Issue High-Performance CMOS Image Sensors)
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