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Gas Sensors Based on the Field Effect
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Gas Sensors Based on the Field Effect

A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Chemical Sensors".

Deadline for manuscript submissions: closed (15 June 2014) | Viewed by 34847

Special Issue Editor

Dr. Mats Eriksson

E-Mail Website
Guest Editor
Department of Physics, Chemistry and Biology, Linköping University, 58183 Linköping, Sweden
Interests: chemical sensors; electrochemical sensors; field-effect devices; scanning light pulse technique; surface and interface physics; catalytic reactions; thin film physics and semiconductor physics

Special Issue Information

Dear Colleagues,

Gas sensors based on the field effect, in particular field effect transistors, can be used in a wide range of applications. They are well known for sensitive and selective detection of hydrogen and ammonia, but are also designed to sense many other gases and gas mixtures. Originally based on silicon as the semiconductor, silicon dioxide as the insulator and precious metals as gate materials, field effect gas sensors today come in a wide variety of materials and structures. Use of nanostructured materials, such as carbon nanotubes and graphene, in the gate of field effect devices is one such trend. The use of wide bandgap materials for the semiconductor part is another. Applying temperature modulation is also a way to extend the sensing capabilities.

The aim of this special issue is to bring together innovative applications of field effect gas sensors, new sensor materials and sensor designs, as well as basic investigations of response mechanisms. Both review articles and original research papers relating to gas sensing with field effect devices are welcome. Papers concerning applications and/or measurement conditions where field effect gas sensors have properties that exceed those of other gas sensor technologies are of particular interest.

Dr. Mats Eriksson
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

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Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.


Keywords

  • field effect
  • gas sensor
  • chemFET
  • wide bandgap field effect devices
  • high temperature sensing
  • hydrogen sensing
  • ammonia sensing
  • temperature modulation
  • response mechanism
  • field effect transistor
  • field effect capacitor
  • schottky diode

Published Papers (4 papers)

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Research

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12308 KiB  
Article
A Comparative Study of the Gas Sensing Behavior in P3HT- and PBTTT-Based OTFTs: The Influence of Film Morphology and Contact Electrode Position
by Kyriaki Manoli, Liviu Mihai Dumitru, Mohammad Yusuf Mulla, Maria Magliulo, Cinzia Di Franco, Maria Vittoria Santacroce, Gaetano Scamarcio and Luisa Torsi
Sensors 2014, 14(9), 16869-16880; https://doi.org/10.3390/s140916869 - 11 Sep 2014
Cited by 35 | Viewed by 7161
Abstract
Bottom- and top-contact organic thin film transistors (OTFTs) were fabricated, using poly(3-hexylthiophene-2,5-diyl) (P3HT) and poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT-C16) as p-type channel semiconductors. Four different types of OTFTs were fabricated and investigated as gas sensors against three volatile organic compounds, with different associated dipole moments. [...] Read more.
Bottom- and top-contact organic thin film transistors (OTFTs) were fabricated, using poly(3-hexylthiophene-2,5-diyl) (P3HT) and poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT-C16) as p-type channel semiconductors. Four different types of OTFTs were fabricated and investigated as gas sensors against three volatile organic compounds, with different associated dipole moments. The OTFT-based sensor responses were evaluated with static and transient current measurements. A comparison between the different architectures and the relative organic semiconductor was made. Full article
(This article belongs to the Special Issue Gas Sensors Based on the Field Effect)
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4514 KiB  
Article
Achieving a Good Life Time in a Vertical-Organic-Diode Gas Sensor
by Ming-Zhi Dai, Yen-Ho Chen, Ming-Yen Chuang, Hsiao-Wen Zan and Hsin-Fei Meng
Sensors 2014, 14(9), 16287-16295; https://doi.org/10.3390/s140916287 - 02 Sep 2014
Cited by 12 | Viewed by 5733
Abstract
In this study, we investigate the keys to obtain a sensitive ammonia sensor with high air stability by using a low-cost polythiophene diode with a vertical channel and a porous top electrode. Poly(3-hexylthiophene) (P3HT) and air-stable poly(5,5'-bis(3-dodecyl-2-thienyl)-2,2'-bithiophene) (PQT-12) are both evaluated as the [...] Read more.
In this study, we investigate the keys to obtain a sensitive ammonia sensor with high air stability by using a low-cost polythiophene diode with a vertical channel and a porous top electrode. Poly(3-hexylthiophene) (P3HT) and air-stable poly(5,5'-bis(3-dodecyl-2-thienyl)-2,2'-bithiophene) (PQT-12) are both evaluated as the active sensing layer. Two-dimensional current simulation reveals that the proposed device exhibits numerous connected vertical nanometer junctions (VNJ). Due to the de-doping reaction between ammonia molecules and the bulk current flowing through the vertical channel, both PQT-12 and P3HT VNJ-diodes exhibit detection limits of 50-ppb ammonia. The P3HT VNJ-diode, however, becomes unstable after being stored in air for two days. On the contrary, the PQT-12 VNJ-diode keeps an almost unchanged response to 50-ppb ammonia after being stored in air for 25 days. The improved storage lifetime of an organic-semiconductor-based gas sensor in air is successfully demonstrated. Full article
(This article belongs to the Special Issue Gas Sensors Based on the Field Effect)
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Review

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3250 KiB  
Review
Gas Sensors Based on Semiconducting Nanowire Field-Effect Transistors
by Ping Feng, Feng Shao, Yi Shi and Qing Wan
Sensors 2014, 14(9), 17406-17429; https://doi.org/10.3390/s140917406 - 17 Sep 2014
Cited by 76 | Viewed by 13062
Abstract
One-dimensional semiconductor nanostructures are unique sensing materials for the fabrication of gas sensors. In this article, gas sensors based on semiconducting nanowire field-effect transistors (FETs) are comprehensively reviewed. Individual nanowires or nanowire network films are usually used as the active detecting channels. In [...] Read more.
One-dimensional semiconductor nanostructures are unique sensing materials for the fabrication of gas sensors. In this article, gas sensors based on semiconducting nanowire field-effect transistors (FETs) are comprehensively reviewed. Individual nanowires or nanowire network films are usually used as the active detecting channels. In these sensors, a third electrode, which serves as the gate, is used to tune the carrier concentration of the nanowires to realize better sensing performance, including sensitivity, selectivity and response time, etc. The FET parameters can be modulated by the presence of the target gases and their change relate closely to the type and concentration of the gas molecules. In addition, extra controls such as metal decoration, local heating and light irradiation can be combined with the gate electrode to tune the nanowire channel and realize more effective gas sensing. With the help of micro-fabrication techniques, these sensors can be integrated into smart systems. Finally, some challenges for the future investigation and application of nanowire field-effect gas sensors are discussed. Full article
(This article belongs to the Special Issue Gas Sensors Based on the Field Effect)
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4866 KiB  
Review
One-Dimensional Nanostructure Field-Effect Sensors for Gas Detection
by Xiaoli Zhao, Bin Cai, Qingxin Tang, Yanhong Tong and Yichun Liu
Sensors 2014, 14(8), 13999-14020; https://doi.org/10.3390/s140813999 - 31 Jul 2014
Cited by 56 | Viewed by 8186
Abstract
Recently; one-dimensional (1D) nanostructure field-effect transistors (FETs) have attracted much attention because of their potential application in gas sensing. Micro/nanoscaled field-effect sensors combine the advantages of 1D nanostructures and the characteristic of field modulation. 1D nanostructures provide a large surface area-volume ratio; which [...] Read more.
Recently; one-dimensional (1D) nanostructure field-effect transistors (FETs) have attracted much attention because of their potential application in gas sensing. Micro/nanoscaled field-effect sensors combine the advantages of 1D nanostructures and the characteristic of field modulation. 1D nanostructures provide a large surface area-volume ratio; which is an outstanding advantage for gas sensors with high sensitivity and fast response. In addition; the nature of the single crystals is favorable for the studies of the response mechanism. On the other hand; one main merit of the field-effect sensors is to provide an extra gate electrode to realize the current modulation; so that the sensitivity can be dramatically enhanced by changing the conductivity when operating the sensors in the subthreshold regime. This article reviews the recent developments in the field of 1D nanostructure FET for gas detection. The sensor configuration; the performance as well as their sensing mechanism are evaluated. Full article
(This article belongs to the Special Issue Gas Sensors Based on the Field Effect)
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