Search Results (180)

Bismuth (Bi)-doped indium oxide (In₂O₃) has emerged as a promising thermoelectric material due to its tunable electrical and thermal properties. This study investigates the effects of Bi-doping on the thermoelectric performance of In₂O₃, focusing on its electrical conductivity, band structure, carrier concentration, mobility, Seebeck coefficient, power factor, thermal conductivity, and overall thermoelectric figure of merit (ZT). The incorporation of Bi into the In₂O₃ lattice significantly enhances the material’s electrical conductivity, attributed to the increased carrier concentration resulting from Bi acting as an effective dopant. However, this doping also leads to a broadening of the bandgap, which influences the electronic transport properties. The Seebeck coefficient (absolute value) is observed to decrease with Bi-doping, a consequence of the elevated carrier concentration. Despite this reduction, the overall power factor improves due to the substantial increase in electrical conductivity. Furthermore, Bi-doping effectively reduces both the total thermal conductivity and the lattice thermal conductivity of In₂O₃. This reduction is primarily due to enhanced phonon scattering caused by the introduction of Bi atoms, which disrupt the lattice periodicity and introduce point defects. The combined improvement in electrical conductivity and reduction in thermal conductivity results in a significant enhancement of the thermoelectric figure of merit (ZT) with highest ZT value increased from 0.055 to 0.402 at 973 K. The optimized Bi-doped In₂O₃ samples demonstrate a ZT value that surpasses that of undoped In₂O₃, highlighting the potential of Bi-doping for advancing thermoelectric applications. This work provides a comprehensive understanding of the underlying mechanisms governing the thermoelectric properties of Bi-doped In₂O₃ and offers valuable insights into the design of high-performance thermoelectric materials for energy conversion technologies. Full article

This work analyzes the radiation shielding effectiveness of biocompatible hydrogel pads containing carbohydrate-based polymer matrices (Alginate, Chitosan, and Cellulose) integrated with the high atomic number (Z) fillers Bismuth Oxide (Bi₂O₃) and Zinc Oxide (ZnO). The Monte Carlo-based toolkit, Geant4, was used to simulate the deposition of the dose throughout a multilayer phantom that mimics the skin (Epidermis, Dermis, Subcutaneous, and Muscle) with a pad on top irradiated with photon and electron beams from 50 keV to 1000 keV. The results indicated that Bi₂O₃ succeeded in causing greater absorption of photons at doses, particularly in deep-layer tissues, from the increase in the filler content as well as the pad thickness. The Cellulose–Bi₂O₃ composites (10 mm thick) not only showed the best deep-shielding property among all investigated combinations but also the Alginate-based pads generally performed better with regard to the surface dose attenuation. The results demonstrate the promising potential of high-Z-doped hydrogels in serving as flexible, light, and biocompatible shielding materials for superficial radiotherapy. Full article

Background/Objectives:Titanium implant surface modifications enhance osseointegration and prevent microbial colonization, improving implant longevity. Antimicrobial coatings, particularly cerium- and bismuth-doped hydroxyapatite (CeHAp and BiHAp), have gained attention for reducing infection-related complications. This study evaluates the antimicrobial activity of CeHAp and BiHAp coatings on CpTi compared to untreated CpTi in artificial saliva at pH levels of 4.5, 6.5, and 8. Methods: Antibacterial efficacy against Staphylococcus aureus (S. aureus), Escherichia coli (E. coli), and Candida albicans (C. albicans) was assessed using the broth dilution method. Titanium rods coated with test compounds were incubated in inoculated nutrient broth, and microbial inhibition was determined via optical density at 600 nm. A statistical analysis was performed using the Kruskal–Wallis ANOVA test, the median and Interquartile Range were determined for the variables, and a Dwass–Steel–Critchlow–Fligner intergroup pairwise comparison was conducted. Results: The results showed that both the CeHAp and BiHAp coatings demonstrated significant antimicrobial activity against S. aureus (OD = 0.01) at pH 6.5, which was more pronounced than the activity observed against E. coli (OD = 0.05), with the difference being statistically significant (p = 0.001). The least antimicrobial activity was observed against C. albicans (0.21) at pH 8 (p = 0.001). Conclusion: These findings highlight the pH-dependent effectiveness of BiHAp and CeHAp coatings in inhibiting microbial growth. Their application on titanium implants may enhance antimicrobial properties, contributing to improved dental implant success and broader biomedical applications. Full article

Lead-free (Bi_1/2Na_1/2)(Ti_1−x(Mg_1/3Nb_2/3)_x)O₃ ceramics were synthesized using the solid-phase method, and the effects of varying (Mg_1/3Nb_2/3)⁴⁺ content, substituting for Ti⁴⁺ ions at the B-site of the BNT perovskite lattice, on piezoelectric performance were systematically investigated. The influence of sintering temperature on both piezoelectric and ferroelectric properties was also explored, revealing that sintering temperature significantly affects both the microstructure and the electrical properties of the ceramics. The results indicate that the incorporation of (Mg_1/3Nb_2/3)⁴⁺ significantly enhances the piezoelectric and ferroelectric properties of BNT ceramics. Specifically, a maximum piezoelectric constant of 91 pC/N was achieved at a sintering temperature of 1160 °C and a doping concentration of x = 0.01. By comparing the ferroelectric properties across different doping levels and sintering temperatures, this study provides valuable insights for further design and process optimization of BNT-based piezoelectric materials. Full article

Thin, dense and nanocrystal bismuth oxide films were prepared by the in situ plasma-assisted reactive evaporation (ARE) method using lead doping. Thin films were deposited at room temperature and at 500 °C temperature on glass and silicon substrates. X-ray diffraction, SEM, EDS, and optical measurements were applied to characterize these bismuth oxide films. The results showed that it is possible to synthesize the δ-Bi₂O₃ phase thin films at a temperature lower than 729 °C using an plasma-assisted reactive evaporation (ARE) method and stabilize it (to room temperature) using the additives of lead oxide. The influence of lead oxide concentration on phase formation was investigated. The optimal amount of lead oxide dopant was determined. An excess of lead oxide concentration forms PbO and δ-Bi₂O₃ mixture phases and nanorods appear in films. The synthesized δ-Bi₂O₃ phase was metastable; it transformed into the β-Bi₂O₃ phase after thermal impact during impedance measurements. The cross section of thin film sample shows the dense and monolithic structure. Optical measurements show that the optical band gap increases with increasing lead concentration. It was found that the highest total ionic conductivity of (Bi_1−xPb_0.26)₂O₃ is 0.165 S/cm at 1073 K temperature and activation energy is ΔE_tot = 0.5 eV. Full article

Bismuth ferrite (BiFeO₃, BFO) is a promising multiferroic material, but its optoelectronic potential is limited by a wide bandgap and charge recombination. Here, we report the sol–gel synthesis of Co-doped BiFeO₃/Bi₂₅FeO₄₀ heterostructured nanopowders (x = 0.07, 0.15) alongside pristine BFO to explore Co doping and phase engineering as strategies to enhance their functional properties. Using X-ray diffraction (XRD) with Rietveld refinement, Fourier-transform infrared spectroscopy (FTIR), field-emission scanning electron microscopy (FE-SEM), UV-Vis spectroscopy, and dielectric analysis, we reveal a biphasic structure (rhombohedral R3c and cubic I23 phases) with tuned phase ratios (~73:27 for x = 0.07; ~76:24 for x = 0.15). Co doping induces lattice strain and oxygen vacancies, reducing the bandgap from 1.78 eV in BFO to 1.31 eV in BFO_0.15 and boosting visible light absorption. Dielectric measurements show reduced permittivity and altered conduction, driven by [Co²⁺-V₀^••] defect dipoles. These synergistic modifications, including phase segregation, defect chemistry, and nanoscale morphology, significantly enhance optoelectronic performance, making these heterostructures compelling for photocatalytic and photovoltaic applications. Full article

Thin films of bismuth(III) sulfide (Bi₂S₃) on fluorine doped tin oxide (FTO) coated glass slides were successfully formed by the chemical bath deposition (CBD) method. In this work, a new sulfur precursor L-cysteine was used instead of the typical sulfur precursors, such as urea, thiosulfate, or thioacetamide, used for the formation of the Bi₂S₃ films by the CBD method. The synthesized Bi₂S₃ thin film on the FTO substrate was subjected to characterization techniques, including X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), and UV–Visible spectroscopy analysis. An X-ray diffraction analysis showed that, initially, Bi₂S₃ films of an amorphous structure with elemental sulfur impurities were formed on the FTO surface. During the annealing of the samples, amorphous Bi₂S₃ was transformed into its crystalline phase with an average crystallite size of about 22.06 nm. The EDS studies confirmed that some of the sulfur that was not part of the Bi₂S₃ was removed from the films during annealing. The influence of the morphology of Bi₂S₃ films on their optical properties was confirmed by studies in the UV-visible range. Full article

Bismuth oxide (β-Bi₂O₃) is a promising visible-light-driven photocatalyst due to its narrow direct bandgap, but its practical application is hindered by rapid electron–hole recombination and limited surface active sites. This study demonstrates a sol-gel synthesis approach to tailor β-Bi₂O₃ nanoparticles through magnesium (Mg) doping, achieving remarkable enhancements in the photocatalytic degradation of organic pollutants and hydrogen evolution. The structural analysis through XRD, SEM, and EDX confirmed Mg-doping concentrations of 0.025 to 0.1 M led to crystallite size reduction from 79 nm to 13 nm, while the UV–Vis bandgap measurement showed it decreased from 3.8 eV to 3.08–3.3 eV. The photodegradation efficiency increased through Mg doping at a 0.1 M concentration, with the highest rate constant value of 0.0217 min⁻¹. The doping process led to VB potential reduction between 3.37 V (pristine) and 2.78–2.91 V across the doped samples when referenced to SCE. The photocatalytic performance of Mg_0.075Bi_1.925O₃ improved with its 3.2 V VB potential because the photoelectric band arrangement enhanced both light absorption and charge separation. The combination of modifications through Mg doping yielded an enhanced photocatalytic performance, which proves that magnesium doping is a pivotal approach to modifying β-Bi₂O₃ suitable for environmentally and energy-related applications. Full article

A new voltammetric sensor (BDDE/Nafion@Fe₃O₄/BiF) was fabricated by applying a nanocomposite drop of Fe₃O₄ magnetic nanoparticles in Nafion onto the polished boron-doped diamond electrode (BDDE) surface. Then, after drying (5 min at room temperature), the electrode was electrochemically modified with bismuth film (BiF) during in situ analysis. The Nafion@Fe₃O₄/BiF modification of the BDDE contributes to the acquisition of the highest differential-pulse adsorptive stripping voltammetric (DPAdSV) signals of caffeine (CAF) due to the improvement of electron transfer and the increase in the number of active sites on which CAF can be adsorbed. The DPAdSV signals exhibited a linearly varied oxidation peak with the CAF concentration range between 0.5 and 10,000 nM, leading to the 0.043 and 0.14 nM detection and quantification limits, respectively. The practical applicability of the DPAdSV procedure using the BDDE/Nafion@Fe₃O₄/BiF was positively confirmed with commercially available energy drinks. Full article

Two-dimensional materials have emerged as core components for next-generation optoelectronic devices due to their quantum confinement effects and tunable electronic properties. Indium selenide (InSe) demonstrates breakthrough photoelectric performance, with its remarkable light-responsive characteristics spanning from visible to near-infrared regions, offering application potential in high-speed imaging, optical communication, and biosensing. This study investigates the doping characteristics of InSe using first-principles calculations, focusing on the doping and adsorption behaviors of Argentum (Ag) and Bismuth (Bi) atoms in InSe and their effects on its electronic structure. The research reveals that Ag atoms preferentially adsorb at interlayer vacancies with a binding energy of −2.19 eV, forming polar covalent bonds. This reduces the band gap from the intrinsic 1.51 eV to 0.29–1.16 eV and induces an indirect-to-direct band gap transition. Bi atoms doped at the center of three Se atoms exhibit a binding energy of −2.06 eV, narrowing the band gap to 0.19 eV through strong ionic bonding, while inducing metallic transition at inter-In sites. The introduced intermediate energy levels significantly reduce electron transition barriers (by up to 60%) and enhance carrier separation efficiency. This study links doping sites, electronic structures, and photoelectric properties through computational simulations, offering a theoretical framework for designing high-performance InSe-based photodetectors. It opens new avenues for narrow-bandgap near-infrared detection and carrier transport optimization. Full article

Polypyrrole (PPy)-doped bismuth calcium manganite (BCM) nanocomposites were synthesized by chemical polymerization. The amorphous nature of the polypyrrole and the monoclinic crystal structure of the BCM particles (35–65 nm) were confirmed by various microstructural, X-ray powder, and spectroscopy techniques. The DC conductivity analysis via the correlated barrier-hopping (CBH) model and Mott’s variable-range hopping (MVRH) model showed that the nanocomposites exhibited ionic conduction. Activation energies, evaluated from the Arrhenius plots, showed that PPy/BCM-30 (30 wt.% of BCM) had the minimum value of 0.09 eV, indicating maximum conductivity and normal NTCR behavior, with resistance decreasing with temperature. The CBH model described the conduction process, and the AC conductivity measurements indicated that the conductivity was frequency-independent at lower frequencies but became dispersive and frequency-dependent at higher frequencies, conforming to Jonscher’s power law. The study revealed that the transport of electrical charge in the material followed the correlated barrier-hopping (CBH) model. These results demonstrate how promising PPy/BCM nanocomposites are for energy storage, sensors, and electronic materials. Full article

In this paper, using the Materials Studio software (version 2020) and based on first-principles and density functional theory, the effects of Sm³⁺ doping at different ratios (1/12, 1/6, and 1/3) on the crystal structure and Mulliken charge distribution of bismuth silicate (Bi₄Si₃O₁₂, BSO) were analyzed. The examination of the crystal framework and Mulliken charge allocation reveals that increasing levels of Sm³⁺ doping have the potential to warp the lattice’s symmetry and result in a decrease in electrical conductivity. With the rise in the concentration of Sm³⁺ doping, the Sm-O bond length shows a pattern of a rise at first and then a fall, demonstrating that electrons are shared, and reaches its minimum length with a doping proportion of 1/12. At the same time, when the doping concentration of Sm³⁺ rises, the Bi-O bond length becomes longer; it reaches its shortest length when the doping concentration is 1/12. This finding suggests that when a small quantity of Sm³⁺ is doped, especially when the doping concentration is 1/12, the covalent nature of the bonds between Sm-O and Bi-O atoms within the BSO crystal is strengthened. Full article

A composite (N-rGO@ppy) of N-doped reduced graphene oxide (N-rGO) coated with polypyrrole (ppy) particles was successfully synthesized. The incorporation of N-rGO significantly mitigates the aggregation of ppy synthesized in situ, and the doped N atoms improve the conductivity of graphene oxide (GO), thereby enhancing N-rGO@ppy’s redox properties. Firstly, a glassy carbon electrode (GCE) modified with N-rGO@ppy (N-rGO@ppy/GCE) was used in combination with a bismuth film and square-wave anodic stripping voltammetry (SWASV) for the simultaneous trace analysis of Pb²⁺ and Cd²⁺. N-rGO@ppy/GCE exhibited distinct stripping peaks for Pb²⁺ and Cd²⁺, with a linear range of 1 to 500 μg L⁻¹. The limits of detection (LODs) were found to be 0.080 μg L⁻¹ for Pb²⁺ and 0.029 μg L⁻¹ for Cd²⁺, both of which are significantly below the standards set by the World Health Organization (WHO). Subsequently, the same electrochemical sensing strategy was adapted to a more portable screen-printed electrode (SPE) to accommodate the demand for in situ detection. The performance of N-rGO@ppy/SPE for analyzing Pb²⁺ and Cd²⁺ in actual samples, such as drinking water, milk, and honey, showed results consistent with those obtained from conventional graphite furnace atomic absorption spectrometry (GFAAS). Full article

Here, we report the hydrothermal synthesis of BFO (bismuth ferrite) and Bi_1−xAg_xFeO₃ (x = 0.01, 0.02) ultrafine nanopowders. The diffraction patterns show that all obtained particles belong to the R3c space group. On top of that, crystal structure prediction has been accomplished using bond valence calculations (BVCs). Several promising perovskite structures have been proposed together with experimentally observed modifications of BFO as a function of silver doping. Magnetization measurements were performed on BFO, both pure and substituted with 1% and 2% of Ag. The addition of Ag in BFO did not affect the Neel temperature, T_N = 630 K for all samples; instead, the influence of Ag was observed in the increase in the value and irreversibility of magnetization, which are usual characteristics of weak ferromagnetism. Our calculations based on density functional theory (DFT) are in agreement with the experimental finding of enhanced magnetization upon Ag doping of antiferromagnetic BFO, which is assigned to the perturbation of magnetic-type interactions between Fe atoms by Ag substitutional doping. Additionally, electronic and magnetic properties were studied for all phases predicted by the BVCs study. DFT predicted half-metallicity in the γ phase of BFO, which may be of great interest for further study and potential applications. Full article

Dielectric capacitors with a high density of recoverable energy storage are extremely desirable for a variety of uses. However, these capacitors often exhibit lower breakdown strengths and energy efficiency compared to other materials, which poses significant challenges for their practical use. We report on a novel antiferroelectric ceramic system in the present study, (1 − x){0.97[0.985(0.93Bi_0.5Na_0.5TiO₃–0.07BaTiO₃)–0.015Er)]–0.03AlN}–xNaNbO₃ (x = 0, 10 wt%, 20 wt%, 30 wt%, and 40 wt%), synthesized via a conventional solid-state reaction approach. Here, (Bi_0.5Na_0.5TiO₃–BaTiO₃) is denoted as BNT–BT. We observed that varying the NaNbO₃ (NN) content gradually refined the grain size of the ceramics, narrowed their hysteresis loops, and transformed their phase structure from antiferroelectric to relaxor ferroelectric. These changes enhanced breakdown strength (E_b), thus increasing the performance of energy storage. Specifically, the recoverable energy density (W_rec) and energy storage efficiency (η), respectively, reached 0.67–1.06 J/cm³ and 44–88% at electric fields of 110–155 kV/cm, with the highest performance observed at 30 wt% NN doping. Additionally, over a broad range of temperature and frequency, the 70 wt% {0.97[0.985(BNT–BT)–0.015Er]–0.03AlN}–30 wt% NN ceramic demonstrated exceptional stability in energy storage. These results demonstrate the significant potential of lead-free(1 − x)({0.97[0.985(BNT–BT)–0.015Er]–0.03AlN}–xNN ceramics for the applications of high-performance energy storage. Full article