Search Results (462)

This paper presents the design, modeling, and hardware implementation of a 1 MHz Gallium Nitride (GaN) quadratic boost converter. Developed as a versatile experimental shield for an STM32 microcontroller development board, the proposed hardware enables direct measurement of all state variables to facilitate the experimental evaluation of advanced control algorithms. Based on a comprehensively derived state-space model, discrete-time Voltage Mode Control (VMC) is initially analyzed, highlighting the difficulties arising from the nature of the cascaded system. During large-signal operation at 1 MHz, this simple control strategy is highly vulnerable to dangerous current surges and oscillatory transients. To mitigate these instabilities, a hybrid Peak Current Mode Control (PCMC) strategy is proposed and implemented. An inner high-speed analog loop provides cycle-by-cycle current limiting, operating the power stage as a voltage-controlled current source to provide an input current limit as protection, even during inter-sample periods, where a slower digital controller remains “blind”. The shield architecture is especially useful here, since it allows the usage of built-in high-speed comparators of the microcontroller. Furthermore, this study investigates the complications arising from executing the outer digital control loop at sampling frequencies (100 kHz and 10 kHz) substantially lower than the switching frequency. Non-linear simulations reveal that at lower sampling rates, the control effort becomes too aggressive, causing the output to oscillate around a setpoint rather than stabilize. Applying a digital filter—specifically, Exponential Moving Averaging (EMA) to the controller output—is implemented to stabilize the reference signal. Both non-linear Simulink simulations and hardware experiments validate the proposed filtered PCMC architecture. Full article

This paper presents the design, structural optimization, and two-dimensional (2D) technology computer-aided design (TCAD) simulation of a gallium nitride (GaN) vertical Merged P-i-N/Schottky (MPS) diode incorporating a multi-drift-layer doping profile, composite SiO₂/Si₃N₄ passivation, and field-plate (FP) termination. The proposed device is constructed on an n⁺-GaN substrate with a three-sub-layer n-type drift region and a p-GaN/p⁺-GaN anode region. Systematic TCAD simulations are performed to investigate the dependences of key performance metrics—including knee voltage (V_knee), specific on-resistance (R_on), breakdown voltage (BV), reverse leakage current (J_leak), and Baliga’s figure of merit (BFOM)—on the Schottky metal work function, multi-drift-layer doping concentration, drift-layer thickness, Schottky-to-PN contact length ratio (γ_w), operating temperature, and reverse recovery switching transients. Results demonstrate that the MPS architecture effectively decouples forward conduction loss from reverse blocking capability, overcoming the conventional R_on–BV trade-off. The optimal doping profile (n_mm = 2 × 10¹⁵, n_m = 2 × 10¹⁵, n = 1 × 10¹⁶ cm⁻³) achieves a BFOM of ~31.97 GW·cm⁻² with BV ≈ 5.98 kV and R_on ≈ 1.12 mΩ·cm². Joint doping–thickness optimization further identifies a graded doping profile (n_mm = 2 × 10¹⁵, n_m = 5 × 10¹⁵, n = 1 × 10¹⁶ cm⁻³) combined with layer thicknesses (T_nmm, T_nm, T_n) = (4.49, 5, 20) μm as the overall optimum, achieving BFOM = 55.36 GW·cm⁻² (BV = 6.61 kV, R_on = 0.79 mΩ·cm²)—a +73% improvement, governed by the punch-through/field-stop design principle. The optimal contact ratio of γ_w = 1.33 yields a BFOM of 38.71 GW·cm⁻². Temperature analysis confirms a positive BV temperature coefficient due to drift-region-limited avalanche breakdown, and the BFOM improves monotonically from 33.31 to 37.82 GW·cm⁻² between 200 K and 450 K. Mixed-mode switching simulations show that increasing γ_w substantially reduces reverse recovery charge (Q_rr), demonstrating the strong potential of the proposed MPS diode for high-voltage, high-frequency, and high-temperature power electronic applications. Full article

Nowadays, numerical simulation methods are advanced and widely used in industry, enabling the modeling of complex systems from printed circuit boards (PCBs) to full power converters. Among many isolated topologies, the phase-shift full-bridge (PSFB) topology is a well-established solution for isolated DC–DC conversion in electric vehicles. Therefore, this paper proposes a broadband electromagnetic compatibility (EMC) modeling methodology for a custom-designed 1 kW gallium nitride (GaN)-based PSFB converter intended for an electric vehicle (EV) DC powertrain. Moreover, the approach combines full-wave electromagnetic simulation with circuit-level simulation, including parasitic effects from PCB layout, power harnesses, and discrete components. Thus, the virtual prototype is assessed within a complete virtual test bench compliant with the standard Comité International Spécial des Perturbations Radioélectriques (CISPR) 25 over the 150 kHz–108 MHz range to capture common-mode (CM) and differential-mode (DM) conducted electromagnetic interference (EMI). Results show that the converter achieves efficiencies of 97.26% in standalone mode and 97.03% when integrated into the full DC powertrain. However, the conducted EMI assessment reveals that both CM and DM emissions exceed CISPR 25 Class 2 limits across the entire spectrum, with excess levels reaching up to 72 dBµV. Therefore, power harnesses significantly increase EMI levels at low frequencies due to the distributed inductance and stray capacitance. Finally, this study demonstrates the value of virtual prototyping for simulation-based EMI prediction in early-stage power converter design. Full article

A quasi-continuous-wave (QCW) laser module based on a half-bridge structure is proposed for the low-voltage silicon photonics application, which forms a continuous-wave (CW) laser output when it equally distributes the heat dissipation into all lasers. Such a QCW laser module is modulated into a CW laser source for the chip-to-chip or board-to-board communication. The source current is alternatively diverted to the high-side and the low-side lasers by turning the corresponding gallium nitride high-electron-mobility transistor (GaN HEMT) on and off. The current redirection modulates multiple QCW laser outputs into a CW laser output; however, an undesirable laser downtime is produced during the transition time of the current redirection. Although for the 10 Gbps data rate transmission, a short laser downtime period may be scheduled for the time to perform either the laser steering task of the free-space optics (FSO) operation or the data pause for the fan-out delay, which is still preferred to be minimized for higher data rate transmission. The power efficiency and the laser downtime are functions of the parameters of the laser diodes, switch parasitic capacitances, input voltage, and the inductor. According to the mathematical derivation of the circuit response, the circuit design rules and the switching control strategy are provided to achieve high efficiency and low laser downtime. In the experiment, we implemented a laser module to achieve an FSO specification with a laser downtime of less than 3 ns, total harmonic distortion (THD) less than 10%, power efficiency greater than 60% and laser power higher than 1 W. Full article

To meet the high standard requirements for broadband high-efficiency power amplifiers in modern communication technology, a 6–18 GHz high-efficiency monolithic microwave integrated circuit (MMIC) power amplifier was developed using a 0.25 μm gallium nitride high-electron mobility transistor (GaN HEMT) process. A multistage Chebyshev-filter-based matching approach is utilized to provide the requisite bandwidth while concurrently managing second-harmonic terminations for enhanced PAE. In the final power stage, a multi-cell combining architecture is employed to achieve high saturated output power. The designed GaN amplifier achieves a saturated power of above 43.5 dBm and a PAE of over 30%. The area of the proposed GaN amplifier is 4 × 3.2 mm². This chip, with its high efficiency and compact size, is promising for high-performance wideband systems. Full article

To minimize the influence of interface states and surface damage, by inserting a gate oxide layer, the photoelectrochemical oxidation method was utilized to directly grow the gate oxide layer while simultaneously creating the gate-recessed regions onto gallium nitride (GaN)-based single-gate and dual-gate metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs). Compared to the single-gate structure, the two-dimensional electron gas (2DEG) channel layer was also modulated by the auxiliary gate, in addition to being modulated by the main gate. Consequently, a wider transconductance range, larger saturation drain-source current, lower gate leakage current, and higher drain-source breakdown voltage were the benefits derived from the auxiliary gate functionality in the dual-gate devices. Moreover, the low-frequency noise characteristics of the GaN-based MOS-HEMTs could also be improved by the dual-gate structure. These experimental results demonstrated that incorporating a dual-gate structure and directly grown gate oxide layers onto GaN-based MOS-HEMTs is a promising alternative for GaN-based low-noise, high-power, and high-frequency applications. Full article

As a representative wide-bandgap semiconductor material, gallium nitride (GaN) has attracted increasing attention because of its superior material properties (e.g., high electron mobility, high electron saturation velocity, and critical electric field). For power electronics applications, and to take full advantage of the superiorities of the GaN material, the normally off operation is required based on an AlGaN/GaN heterostructure. For a commercial approach, GaN HEMTs with a p-GaN gate have become a research hotspot. The characteristics of p-GaN gate HEMTs have a significant relationship with gate structure, especially the contact type on the p-GaN layer. In this review, the necessity of normally off operation and the advantages of adopting a p-GaN gate are elaborated, followed by the theory of achieving normally off operation by p-GaN and critical fabrication processes. The various gate structures are discussed, including metal gate, junction gate and hybrid gate structures on the p-GaN layer, to improve threshold voltage. Meanwhile, the methods required to optimize breakdown voltage and monolithically integrated technologies are also demonstrated. This review outlines the development and future trends of p-GaN gate HEMTs for power systems. Full article

With the growing need for high-power density, high-efficiency power electronics, wide band gap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), have been widely used in recent years. With high switching speed, stray inductance induced by packaging would cause voltage overshooting and oscillation during the switching transient, which should be mitigated at all costs. In this paper, a power module design based on a multilayer insulated metal substrate (MIMS) structure was proposed to effectively address the stray inductance concern based on the mutual-inductance cancelling effect. Fabrication process flow with high feasibility was also designed. Electrical and thermal simulations were conducted based on a power module with a nominal rating of 1200 V and 500 A. Compared to the planar module, the proposed design possessed much lower stray inductance (3.47 nH vs. 14.85 nH). In the transient thermal simulation, the proposed module exhibited a time constant 141.7% higher than that of the hybrid module with a ceramic substrate on the bottom but MIMS on the top, making it suitable for applications with high-constant power output requirements. Full article

Liquid gallium (Ga) provides a dynamic reaction interface covered by a self-limiting native oxide layer, yet the reaction behavior of liquid Ga with different inorganic nitrogen sources and the surface-layer evolution remains insufficiently clarified. Herein, we have comparatively investigated interfacial reactions of pure liquid gallium (Ga) with N₂, NH₃, and NH₄Cl under controlled thermal treatments (400, 450, or 500 °C for a 6 h duration), and further examined the reaction with NH₄Cl in non-contact versus direct-contact configurations. The resulting surface films were analyzed using a combination of multiple characterization tools after removing residual liquid Ga underneath. Under N₂ at 400–500 °C, the surface products obtained were dominated by oxygen-containing gallium species and no distinguishable nitride phase was detected, indicating sluggish kinetics of nitridation in this temperature range. In comparison, NH₃ promoted nitrogen incorporation more effectively. Nitrogen-related signals were also detected in the surface products of the NH₄Cl experiments in non-contact and direct-contact modes, whereas direct contact resulted in significantly stronger interfacial restructuring and characteristic morphologies, such as spheres and hollow-shell structures. Overall, the extent of nitrogen incorporation and the morphology evolution are jointly governed by nitrogen-source reactivity, temperature, and local contact conditions, with the native oxide layer mediating the competing oxidation and nitridation processes. Full article

In this work, a novel understanding of the main failure mechanism of a Schottky p-GaN gate AlGaN/GaN HEMT subject to forward gate stress is reported. First an experimental characterization of the gate leakage current (I_GSS) at different temperatures is reported. Then, Technology Computer Aided Design (TCAD) simulations are used to reproduce the experimental I_GSS thanks to the impact ionization model, also at different temperatures. Simulation results underline how the stressed regions for the Device Under Test (DUT) at high gate biases are the Schottky/p-GaN interface, the p-GaN/AlGaN barrier interface, and p-GaN sidewalls. Moreover, Time Dependent Gate Breakdown (TDGB) measurements were done, and the TEM analysis on the failed device showed the lattice crystal damage located at the p-GaN/AlGaN interface, in accordance with TCAD simulations’ current density distribution at high voltage gate stress. Full article

Wide-bandgap (WBG) semiconductors are propelling a paradigm shift in advanced power electronics, offering functionality that includes higher-switching-frequency operation with improved efficiency and power density possibilities. Gallium nitride (GaN) exhibits unique material properties that correspond to device parameters beneficial for achieving an improved performance compared to its counterparts. The inception of GaN power semiconductor devices has enabled advanced power electronics to realize efficient and compact power converters. However, the current rating of the devices is constrained, and paralleling of the devices is vital to realize high-currentrated power modules. Furthermore, paralleling of the devices can provide improved cooling results in high-power-density systems. This paper presents a comprehensive review study of the paralleling of GaN devices to discuss the different challenges associated with paralleling. One of the fundamental challenges is associated with the design of a structure for paralleling GaN devices. The parallel device structure consequently impacts the parasitics of the device, which limit the operating switching frequency and thermo-mechanical aspects. Furthermore, power loop inductance, gate loop inductance asymmetry, common-source inductance, gate inductance trace length mismatch, and different challenges lead to design trade-offs and efforts to optimize the design by realizing an appropriate trade-off, considering low-inductance packaging along with thermal strategies, and considering a parallel circuit layout and structure. Considering the recent research trends and studies related to the design of parallel GaN devices, this paper presents future perspectives anticipating the realization of an improved parallel GaN device structure. Full article

The accelerating adoption of electric vehicles (EVs) is driving the demand for next-generation wide-bandgap (WBG) power devices that can deliver high efficiency, high power density, and robust operation under stringent electrical and thermal stress. Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) have emerged as a leading WBG technology due to their high breakdown voltage, ultrafast switching capability, and low conduction and switching losses relative to silicon devices, enabling high-performance EV power converters such as on-board chargers, DC-DC converters, and traction inverters. This review provides a comprehensive device-level assessment of GaN HEMTs, emphasizing advanced device architectures, state-of-the-art discrete transistors, and their implications for high-frequency, high-efficiency power conversion. Critical performance and reliability challenges, including current collapse, self-heating, and gate degradation, are analyzed in the context of their physical mechanisms and operational behavior under realistic conditions such as elevated junction temperatures, high switching frequencies, and dynamic load profiles. Furthermore, emerging opportunities in ultra-wide-bandgap semiconductor technologies beyond GaN are discussed, providing insights to guide the design, optimization, and robust integration of WBG devices into next-generation EV power electronic systems. Full article

Power density and power efficiency are crucial for the design of high-performance computing servers. Buck converters exist due to their simplicity, but achieving a solution that combines high efficiency and high power density remains an ongoing research area in buck converter design. High-frequency switching, which reduces inductor size in buck converters, is a common method for achieving high power density; however, high-frequency switching introduces higher switching losses, hence the frequent use of GaN HEMTs, which have low switching losses. To achieve both high efficiency and high power density, this study proposes a compact buck converter design that pairs a D-type GaN HEMT with a low-voltage PMOS, termed a P-cascode GaN HEMT. We analyze different current switching modes and find that boundary conduction mode (BCM) can minimize inductor size while maintaining high power efficiency. This paper explores the theoretical basis of BCM and the P-cascode GaN HEMT, derives the operating conditions of BCM, estimates power efficiency, and proposes a high-power density buck converter solution. Simulation and experimental results show that the proposed design achieves 95% power efficiency in applications from 12 V to 3.3 V, while reducing the inductor size by a factor of 10 compared to continuous conduction mode (CCM) designs. Full article

This study proposes a 300 W class Gallium Nitride (GaN) Solid-State Power Amplifier (SSPA)-based microwave plasma generator system for implementing next-generation light sources with high brightness and color rendering at 2.45 GHz. To overcome the lifetime limitations and control constraints of conventional magnetron systems, the proposed system introduces custom packaging technology utilizing GaN-on-SiC Bare-dies fabricated via the Win-semiconductor’s NP25 process. This approach minimizes parasitic components and significantly reduces thermal resistance compared to standard packages, ensuring reliability during high-power operation. A stable RF output of 300 W was achieved through two-stage power combining. For the plasma source, an Ar-InBr-Hg gas mixture was employed to optimize optical characteristics. This gas mixture is commonly used in electrodeless plasma lamps due to its high luminous efficacy and stable discharge characteristics. To analyze the rapid impedance discontinuity during gas ignition, numerical analysis based on the Drude model was performed, theoretically identifying the complex permittivity transition of the medium and the resulting resonant frequency up-shift mechanism. To mitigate system instability during this transition, an adaptive frequency tracking and feedback control loop based on real-time VSWR monitoring was implemented. Experimental results demonstrate precise tracking within a 100 MHz frequency variable range, achieving a system efficiency of over 53% and maintaining a VSWR below 1.15:1. These results validate the practical feasibility of GaN SSPA technology in electrodeless lighting and industrial plasma applications utilizing high-power RF energy. Full article

Wide bandgap (WBG) semiconductors such as gallium nitride (GaN) and silicon carbide (SiC) have revolutionized modern power electronics by enabling devices that operate at higher voltages, temperatures, and switching frequencies than their silicon counterparts. This paper reviews the material properties, device architectures, fabrication techniques, and thermal management strategies that underpin the performance of GaN and SiC technologies. We highlight key trade-offs between GaN and SiC in terms of voltage blocking capability, switching efficiency, and thermal robustness and discussed their application in electric vehicles, renewable energy systems, and power converters. Market adoption trends and manufacturing challenges are also analyzed, with attention to cost-performance dynamics and packaging innovations. Finally, we address the critical role of thermal boundary resistance and emerging reliability solutions, providing a perspective on the future trajectory of WBG device research and commercialization. Full article