241 Results Found

The efficiency of micro-light-emitting diodes ($\mu$-LEDs) depends enormously on the chip size, and this is connected to sidewall-trap-assisted nonradiative recombination. It is known that the internal quantum efficiency (IQE) of aluminum gallium indi...

β-Ga₂O₃, characterized with high n-type conductivity, little lattice mismatch with III-Nitrides, high transparency (>80%) in blue, and UVA (400–320 nm) as well as UVB (320–280 nm) regions, has great potential as the substrate for...

In this study, GaN-based blue InGaN/GaN light-emitting diodes (LEDs) with different growth rates of the quantum barriers were fabricated and investigated. The LEDs with quantum barriers grown with a higher growth rate exhibit a lower leakage current...

A III-nitride red LED with an active region temperature of 835 °C on a Si substrate utilizing a strain-relaxed template (SRT) is demonstrated. The peak wavelength blueshifts from 670 nm at 1 A/cm² to 636 nm at 150 A/cm². The on-wafer external qua...

This review describes the development history of group-III nitride light-emitting diodes (LEDs) for over 30 years, which has achieved brilliant achievements and changed people′s lifestyles. The development process of group-III nitride LEDs is t...

Guidelines for the fabrication of nanoscale light-emitting diode arrays (i.e., nanoLED arrays) based on patterned gallium nitride (GaN) with very small dimensions and pitches have been derived in this work. Several challenges during top-down LED arra...

Micro-LED arrays exhibit high brightness, a long lifespan, low power consumption, and a fast response speed. In this paper, we have proposed a series-biased micro-LED array by using a nitride layer with multi-quantum wells epitaxial on sapphire subst...

LEDs are highly energy efficient and have substantially longer lifetimes compared to other existing lighting technologies. In order to facilitate the new generation of LED devices, approaches to improve power efficiency with increased integration lev...

Light-emitting diodes (LEDs) are solid-state devices that are highly energy efficient, fast switching, have a small form factor, and can emit a specific wavelength of light. The ability to precisely control the wavelength of light emitted with the fa...

In recent years, with the increasing research and development of the light-emitting diode (LED) industry, which contains gallium nitride (GaN), it is expected that there will be a large amount of related wastes in the future. Gallium has an extremely...

We study recombination processes in nitride LEDs emitting from 270 to 540 nm with EQE ranging from 4% to 70%. We found a significant correlation between the LEDs’ electro-optical properties and the degree of nanomaterial disorder (DND) in quant...

Highly efficient indium gallium nitride (InGaN)-based yellow light-emitting diodes (LEDs) with low efficiency droop have always been pursued for next-generation displays and lighting products. In this work, we report an InGaN quantum barrier (QB) wit...

Nitridosilicates are structurally built up on three-dimensional SiN4 tetrahedral networks, forming a very interesting class of materials with high thermomechanical properties, hardness, and wide band gap. Traditionally, nitridosilicates are often use...

In this work, we grew transfer-free graphene-like thin films (GLTFs) directly on gallium nitride (GaN)/sapphire light-emitting diode (LED) substrates. Their electrical, optical and thermal properties were studied for transparent electrode application...

Public awareness of preventing pathogenic microorganisms has significantly increased. Among numerous microbial prevention methods, the deep-ultraviolet (DUV) disinfection technology has received wide attention by using the nitride-based light-emittin...

To promote the development of long-distance high-speed underwater optical wireless communication (UWOC) based on visible light, this study proposes a high-bandwidth UWOC system based on micro-light-emitting-diodes (micro-LEDs) adopting the Non-Return...

In this paper, the X-ray diffraction full width at half the maximum (XRD FWHM) of a 3.5 µm-thick hydride vapor phase epitaxy-aluminum nitride (HVPE-AlN) (002) face after high-temperature annealing was reduced to 129 arcsec. The tensile strain i...

Flip-chip truncated-pyramid-shaped blue micro-light-emitting diodes (μ-LEDs), with different inclinations of the mesa facets to the epitaxial layer plane, are studied by simulations, implementing experimental information on temperature-dependent p...

Surface plasmon (SP)-enhanced quantum-well (QW) LEDs have proved their potential in replacing conventional lighting devices for their high-performance capabilities in ultraviolet (UV), blue and green spectral ranges. The SP-enhanced QW-LEDs have appl...

We examine full InGaN-based microLEDs on c-plane semi-relaxed InGaN substrates grown by metal organic chemical vapor deposition (MOCVD) that operate across a wide range of emission wavelengths covering nearly the entire visible spectrum. By employing...

Highly conductive silicon-doped AlGaN and ohmic contacts are needed for deep-UV LEDs and ultrawide bandgap electronics. We demonstrate improved n-Al_0.65Ga_0.35N films grown by metal–organic chemical vapor deposition (MOCVD) on sapphire substrates usin...

In this paper, the conditions of the dip-coating method of SiO₂ nanospheres are optimized, and a neatly arranged single-layer SiO₂ array is obtained. On this basis, a “top-down” inductively coupled plasma (ICP) technique is used to etch the p-GaN lay...

Ultraviolet (UV) light plays an important role in air/water/surface sterilization now. Maintaining a certain light intensity is often required to attain the targeted effect. In this paper, on-chip power monitoring of a UV-A light-emitting diode (LED)...

The effect of strongly-imbalanced carrier concentration and mobility on efficiency droop is studied by comparing the onset voltage of high injection, the onset current density of the droop, and the magnitude of the droop, as well as their temperature...

Coupling superconducting (SC) contacts to light-emitting layers can lead to remarkable effects, as seen in inorganic quantum-well LEDs with superconducting contacts, where an enhancement in radiative recombination was observed. Additional dramatic ef...

We compare the optical properties of four pin diode samples differing by built-in field direction and width of the In_0.17Ga_0.83N quantum well in the active layer: two diodes with standard nip layer sequences and 2.6 and 15 nm well widths and two diod...

This work reports on the possibility of sustaining a stable operation of polarization-doped InGaN light emitters over a particularly broad temperature range. We obtained efficient emission from InGaN light-emitting diodes between 20 K and 295 K and f...

Effects of Ca content (in the reactant mixture) on the formation and the photoluminescence properties of CaAlSiN₃:Eu²⁺ phosphor (CASIN) were investigated by a combustion synthesis method. Ca, Al, Si, Eu₂O₃, NaN₃, NH₄Cl and Si₃N₄ powders were used as...

This paper reviews the progress of AlGaN-based deep-ultraviolet (DUV) light emitting diodes (LEDs), mainly focusing in the work of the authors’ group. The background to the development of the current device structure on sapphire is described an...

InGaN-based long-wavelength light-emitting diodes (LEDs) are indispensable components for the next-generation solid-state lighting industry. In this work, we introduce additional InGaN/GaN pre-wells in LED structure and investigate the influence on o...

The influence of plasma nitriding and gas nitriding processes on the change of surface roughness and dimensional accuracy of 42CrMo4 steel was investigated in this paper. Both processes almost always led to changes in the surface texture. After plasm...

III-nitride light-emitting devices have been subjects of intense research for the last several decades owing to the versatility of their applications for fundamental research, as well as their widespread commercial utilization. Nitride light-emitters...

In the past years, light-emitting diodes (LED) made of GaN and its related ternary compounds with indium and aluminium have become an enabling technology in all areas of lighting. Visible LEDs have yet matured, but research on deep ultraviolet (UV) L...

Rare-earth-doped SiAlON and Si₃N₄ materials from aluminosilicate starting materials have been reported to show superior photoluminescence (PL) properties. Three different starting materials, including pulverized coal furnace fly ash, diatomite and ra...

In this study, III-nitride red micro-light-emitting diodes (µLEDs) with ultralow forward voltage are demonstrated on a strain relaxed template. The forward voltage ranges between 2.00 V and 2.05 V at 20 A/cm² for device dimensions from 5 ×...

In this work, we studied the effect of molybdenum precursors and the synthesis conditions on the final phase composition of bulk and supported molybdenum carbides and nitrides. Ammonium heptamolybdate, its mixture with hexamethylenetetramine, and the...

We analyze the thermal behavior of a flexible nanowire (NW) light-emitting diode (LED) operated under different injection conditions. The LED is based on metal–organic vapor-phase deposition (MOCVD)-grown self-assembled InGaN/GaN NWs in a polyd...

Light-emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing various applications in lighting, displays, biotechnology, and other fields. However, their energy efficiency is still below expectations in many cases. An unpreced...

III-nitride semiconductors have wide bandgap and high carrier mobility, making them suitable candidates for light-emitting diodes (LEDs), laser diodes (LDs), high electron mobility transistors (HEMTs) and other optoelectronics. Compared with conventi...

Gallium nitride continues to be a material of intense interest for the ongoing advancement of electronic and optoelectronic devices. While the bulk of today’s markets for low-performance devices is still met with silicon and blue/UV LEDs derive...

Monolithic phosphor-free two-color gallium nitride (GaN)-based white light emitting diodes (LED) have the potential to replace current phosphor-based GaN white LEDs due to their low cost and long life cycle. Unfortunately, the growth of high indium c...

This study presents a comparative analysis of the corrosion resistance of nitrided layers on conventional Grade 2 titanium alloy and those produced by direct metal laser sintering (DMLS). Low-temperature glow-discharge nitriding of the tested materia...

With the improvement of the conversion efficiency of LED chip and fluorescent material and the increasing demand for high-brightness light sources, LED technology has begun to move toward the direction of high-power. However, there is a huge problem...

The solid-state mechanical alloying (MA) of high-nitrogen chromium-manganese austenite steel—MA in a planetary ball mill, —was studied by methods of Mössbauer spectroscopy and transmission electron microscopy (TEM). In the capacity of a material for...

Two-dimensional (2D) nanostructures of aluminum nitride (AlN) and gallium nitride (GaN), called nanosheets, have a graphene-like atomic arrangement and represent novel materials with important upcoming applications in the fields of flexible electroni...

Due to the harsh operating conditions experienced by 1Cr17Ni2 steel, efforts were made to optimize its performance by subjecting 1Cr17Ni2 stainless steel to nitriding treatments at temperatures of 460 °C, 500 °C, and 550 °C, each for dura...

Transferable, low-stress gallium nitride grown on graphene for flexible lighting or display applications may enable next-generation optoelectronic devices. However, the growth of gallium nitride on graphene is challenging. In this study, the adsorpti...

III-nitride semiconductors (AlGaN, GaN and InGaN) have received considerable attention in various fields ranging from high-frequency and high-temperature electronics [1] to LED lighting technologies [2]. [...]

An indium gallium nitride (InGaN) light-emitting diode (LED) with an embedded porous GaN reflector and a current confined aperture is presented in this study. Eight pairs of n⁺-GaN:Si/GaN in stacked structure are transformed into a conductive, porous...

Ultraviolet light-emitting diodes (LEDs) based on Aluminum Gallium Nitride (AlGaN) suffer from poor carriers’ confinement effect, one possible solution to this problem is to increase the barrier heights for carriers by increasing Aluminum conte...