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Keywords = pulse height spectroscopy (PHS)

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27 pages, 8784 KB  
Article
Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices
by Krishna C. Mandal, Joshua W. Kleppinger and Sandeep K. Chaudhuri
Micromachines 2020, 11(3), 254; https://doi.org/10.3390/mi11030254 - 28 Feb 2020
Cited by 55 | Viewed by 6287
Abstract
Advances towards achieving the goal of miniature 4H-SiC based radiation detectors for harsh environment application have been studied extensively and reviewed in this article. The miniaturized devices were developed at the University of South Carolina (UofSC) on 8 × 8 mm 4H-SiC epitaxial [...] Read more.
Advances towards achieving the goal of miniature 4H-SiC based radiation detectors for harsh environment application have been studied extensively and reviewed in this article. The miniaturized devices were developed at the University of South Carolina (UofSC) on 8 × 8 mm 4H-SiC epitaxial layer wafers with an active area of ≈11 mm2. The thicknesses of the actual epitaxial layers were either 20 or 50 µm. The article reviews the investigation of defect levels in 4H-SiC epilayers and radiation detection properties of Schottky barrier devices (SBDs) fabricated in our laboratories at UofSC. Our studies led to the development of miniature SBDs with superior quality radiation detectors with highest reported energy resolution for alpha particles. The primary findings of this article shed light on defect identification in 4H-SiC epilayers and their correlation with the radiation detection properties. Full article
(This article belongs to the Special Issue SiC based Miniaturized Devices)
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