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Search Results (668)

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Keywords = semiconductor coupling

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11 pages, 2245 KB  
Article
A Three-Terminal Si-Ge Avalanche Photodiode with a Breakdown Voltage of 6.8 V and a Gain Bandwidth Product of 1377 GHz
by Chao Cheng, Jintao Xue, Xishan Yu, Jifang Mu and Binhao Wang
Micromachines 2025, 16(11), 1222; https://doi.org/10.3390/mi16111222 - 27 Oct 2025
Viewed by 121
Abstract
Silicon–germanium (Si-Ge) avalanche photodiodes (APDs), fully compatible with complementary metal–oxide–semiconductor (CMOS) processes, are critical devices for high-speed optical communication. In this work, we propose a three-terminal Si-Ge APD on a silicon-on-insulator (SOI) substrate based on device simulation studies. The proposed APD employs a [...] Read more.
Silicon–germanium (Si-Ge) avalanche photodiodes (APDs), fully compatible with complementary metal–oxide–semiconductor (CMOS) processes, are critical devices for high-speed optical communication. In this work, we propose a three-terminal Si-Ge APD on a silicon-on-insulator (SOI) substrate based on device simulation studies. The proposed APD employs a separate absorption and multiplication structure, achieving an ultra-low breakdown voltage of 6.8 V. The device operates in the O-band, with optical signals laterally coupled into the Ge absorption layer via a silicon nitride (Si3N4) waveguide. At a bias of 2 V, the APD exhibits a responsivity of 0.85 A/W; under a bias of 6.6 V, it achieves a 3-dB optoelectronic (OE) bandwidth of 51 GHz, a direct current gain of 27, and a maximum gain–bandwidth product (GBP) of 1377 GHz. High-speed performance is further confirmed through eye-diagram simulations at 100 Gbps non-return-to-zero (NRZ) and 200 Gbps four-level pulse amplitude modulation (PAM4). These results clearly show the strong potential of the proposed APD for optical communication and interconnect applications under stringent power and supply voltage constraints. Full article
(This article belongs to the Special Issue Photonic and Optoelectronic Devices and Systems, Third Edition)
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14 pages, 19249 KB  
Article
Topological Phase Transition in Two-Dimensional Magnetic Material CrI3 Bilayer Intercalated with Mo
by Chen-En Yin, Angus Huang and Horng-Tay Jeng
Materials 2025, 18(20), 4751; https://doi.org/10.3390/ma18204751 - 16 Oct 2025
Viewed by 279
Abstract
Motivated by the seminal discoveries in graphene, the exploration of novel physical phenomena in alternative two-dimensional (2D) materials has attracted tremendous attention. In this work, through theoretical investigation using first-principles calculations, we reveal that Mo-intercalated CrI3 bilayer exhibits ferromagnetic semiconductor behavior with [...] Read more.
Motivated by the seminal discoveries in graphene, the exploration of novel physical phenomena in alternative two-dimensional (2D) materials has attracted tremendous attention. In this work, through theoretical investigation using first-principles calculations, we reveal that Mo-intercalated CrI3 bilayer exhibits ferromagnetic semiconductor behavior with a small easy-plane magnetocrystalline anisotropy energy (MAE) of 0.618 meV/Cr(Mo) between (100) and (001) magnetizations. The spin–orbit coupling (SOC) opens a narrow band gap at the Fermi level for both magnetization orientations with nonzero Chern number for realizing the quantum anomalous Hall effect (QAHE) in the former and with trivial topology in the latter. The small MAE implies the efficient experimental manipulation of magnetization between distinct topologies through an external magnetic field. Our findings provide compelling evidence that the QAHE in this system originates from the quantum spin Hall effect (QSHE), driven by intrinsic magnetism under broken time-reversal symmetry. These unique properties position Mo-intercalated CrI3 as a promising candidate for tunable spintronic applications. Full article
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14 pages, 891 KB  
Article
Tensor Network Modeling of Electronic Structure of Semiconductor Nanoparticles and Sensory Effect of Layers Based on Them
by Vladimir S. Posvyanskii, Valeria L. Bodneva, Andrei V. Chertkov, Kairat S. Kurmangaleev, Maria I. Ikim, Vasily B. Novozhilov, Ivan V. Oseledets and Leonid I. Trakhtenberg
Mathematics 2025, 13(20), 3296; https://doi.org/10.3390/math13203296 - 15 Oct 2025
Viewed by 196
Abstract
This paper develops mathematical apparatus for the modeling of the electronic structure of semiconductor nanoparticles and the description of sensor response of the layers constructed on their base. The developed technique involves solutions of both the direct and inverse problems. The direct problem [...] Read more.
This paper develops mathematical apparatus for the modeling of the electronic structure of semiconductor nanoparticles and the description of sensor response of the layers constructed on their base. The developed technique involves solutions of both the direct and inverse problems. The direct problem involves of the two coupled sets of differential equations, at fixed values of physical parameters. The first of them is the set of equations of chemical kinetics which describes processes occurring at the surface of a nanoparticle. The second involves an equation describing electron concentration distribution inside a nanoparticle. The inverse problem consists of the determination of physical parameters (essentially, reactions rate constants) which provide a good approximation of experimental data when using them to find the solution of the direct problem. The mathematical novelty of this paper is the application of—for the first time, to find the solution of the inverse problem—the new gradient-free optimization methods based on low-rank tensor train decomposition and modern machine learning paradigm. Sensor effect was measured in a dedicated set of experiments. Comparisons of computed and experimental data on sensor effect were carried out and demonstrated sufficiently good agreement. Full article
(This article belongs to the Section E: Applied Mathematics)
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11 pages, 319 KB  
Article
Non-Linear Quantum Dynamics in Coupled Double-Quantum- Dot-Cavity Systems
by Tatiana Mihaescu, Mihai A. Macovei and Aurelian Isar
Physics 2025, 7(4), 47; https://doi.org/10.3390/physics7040047 - 14 Oct 2025
Viewed by 272
Abstract
The steady-state quantum dynamics of a compound sample consisting of a semiconductor double-quantum-dot (DQD) system, non-linearly coupled with a leaking superconducting transmission line resonator, is theoretically investigated. Particularly, the transition frequency of the DQD is taken to be equal to the doubled resonator [...] Read more.
The steady-state quantum dynamics of a compound sample consisting of a semiconductor double-quantum-dot (DQD) system, non-linearly coupled with a leaking superconducting transmission line resonator, is theoretically investigated. Particularly, the transition frequency of the DQD is taken to be equal to the doubled resonator frequency, whereas the inter-dot Coulomb interaction is considered weak. As a consequence, the steady-state quantum dynamics of this complex non-linear system exhibit sudden changes in its features, occurring at a critical DQD-cavity coupling strength, suggesting perspectives for designing on-chip microwave quantum switches. Furthermore, we show that, above the threshold, the electrical current through the double-quantum dot follows the mean photon number into the microwave mode inside the resonator. This might not be the case any more below that critical coupling strength. Lastly, the photon quantum correlations vary from super-Poissonian to Poissonian photon statistics, i.e., towards single-qubit lasing phenomena at microwave frequencies. Full article
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34 pages, 4932 KB  
Review
Recent Progress in Liquid Microlenses and Their Arrays for Adaptive and Applied Optical Systems
by Siyu Lu, Zheyuan Cao, Jinzhong Ling, Ying Yuan, Xin Liu, Xiaorui Wang and Jin-Kun Guo
Micromachines 2025, 16(10), 1158; https://doi.org/10.3390/mi16101158 - 13 Oct 2025
Viewed by 735
Abstract
Liquid microlenses and their arrays (LMLAs) have emerged as a transformative platform in adaptive optics, offering superior reconfigurability, compactness, and fast response compared to conventional solid-state lenses. This review summarizes recent progress from an application-oriented perspective, focusing on actuation mechanisms, fabrication strategies, and [...] Read more.
Liquid microlenses and their arrays (LMLAs) have emerged as a transformative platform in adaptive optics, offering superior reconfigurability, compactness, and fast response compared to conventional solid-state lenses. This review summarizes recent progress from an application-oriented perspective, focusing on actuation mechanisms, fabrication strategies, and functional performance. Among actuation mechanisms, electric-field-driven approaches are highlighted, including electrowetting for shape tuning and liquid crystal-based refractive-index tuning techniques. The former excels in tuning range and response speed, whereas the latter enables programmable wavefront control with lower optical aberrations but limited efficiency. Notably, double-emulsion configurations, with fast interfacial actuation and inherent structural stability, demonstrate great potential for highly integrated optical components. Fabrication methodologies—including semiconductor-derived processes, additive manufacturing, and dynamic molding—are evaluated, revealing trade-offs among scalability, structural complexity, and cost. Functionally, advances in focal length tuning, field-of-view expansion, depth-of-field extension, and aberration correction have been achieved, though strong coupling among these parameters still constrains system-level performance. Looking forward, innovations in functional materials, hybrid fabrication, and computational imaging are expected to mitigate these constraints. These developments will accelerate applications in microscopy, endoscopy, AR/VR displays, industrial inspection, and machine vision, while paving the way for intelligent photonic systems that integrate adaptive optics with machine learning for real-time control. Full article
(This article belongs to the Special Issue Micro-Nano Photonics: From Design and Fabrication to Application)
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42 pages, 7350 KB  
Review
A Review: Grating Encoder Technologies for Multi-Degree-of-Freedom Spatial Measurement
by Linbin Luo, Maqiang Zhao and Xinghui Li
Sensors 2025, 25(19), 6071; https://doi.org/10.3390/s25196071 - 2 Oct 2025
Cited by 1 | Viewed by 482
Abstract
In advanced manufacturing, nanotechnology, and aerospace fields, the demand for precision is increasing. Driven by this demand, multi-degree-of-freedom grating encoders have become particularly crucial in high-precision displacement and angle measurement. Over the years, these encoders have evolved from one-dimensional systems to complex multi-degree-of-freedom [...] Read more.
In advanced manufacturing, nanotechnology, and aerospace fields, the demand for precision is increasing. Driven by this demand, multi-degree-of-freedom grating encoders have become particularly crucial in high-precision displacement and angle measurement. Over the years, these encoders have evolved from one-dimensional systems to complex multi-degree-of-freedom measurement solutions that can achieve real-time synchronization. There can also be high-resolution feedback. Its structure is relatively compact, the signal output is also very stable, and the integration degree is high. This gives it a significant advantage in complex measurement tasks. Recently, there have been new developments. The functions of grating encoders in terms of principle, system architecture, error modeling, and signal processing strategies have all been expanded. For instance, accuracy can be improved by integrating multiple reading-heads, while innovative strategies such as error decoupling and robustness enhancement have further advanced system performance. This article will focus on the development of two-dimensional, three-dimensional and multi-degree-of-freedom grating encoders, exploring how the measurement degrees of freedom have evolved, and emphasizing key developments in spatial decoupling, error compensation and system integration. At the same time, it will also discuss some challenges, such as error coupling, system stability and intelligent algorithms for integrating real-time error correction. The future of grating encoders holds great potential. Their applications in precision control, semiconductor calibration, calibration systems, and next-generation intelligent manufacturing technologies can bring promising progress to both industrial and scientific fields. Full article
(This article belongs to the Section Optical Sensors)
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17 pages, 4348 KB  
Article
[1,2,5]Oxadiazolo[3,4-b]dithieno[2,3-f:2′,3′-h]quinoxaline as a Versatile Scaffold for the Construction of Various Polycyclic Systems as Potential Organic Semiconductors
by Elizaveta M. Krynina, Yuriy A. Kvashnin, Ekaterina F. Zhilina, Denis A. Gazizov, Pavel A. Slepukhin, Gennady L. Rusinov, Egor V. Verbitskiy and Valery N. Charushin
Chemistry 2025, 7(5), 158; https://doi.org/10.3390/chemistry7050158 - 1 Oct 2025
Viewed by 327
Abstract
A straightforward synthetic method is advanced to produce hard-to-reach polycyclic compounds belonging to the [1,2,5]oxadiazolo[3,4-b]quinoxaline ring system. This approach draws on a combination of the nucleophilic aromatic substitution of hydrogen (SNH) and Scholl cross-coupling reactions, followed by reduction [...] Read more.
A straightforward synthetic method is advanced to produce hard-to-reach polycyclic compounds belonging to the [1,2,5]oxadiazolo[3,4-b]quinoxaline ring system. This approach draws on a combination of the nucleophilic aromatic substitution of hydrogen (SNH) and Scholl cross-coupling reactions, followed by reduction of the 1,2,5-oxadiazole fragment under mild reaction conditions. All compounds were obtained for the first time with moderate to excellent yields. Electrochemical and photophysical measurements show that the synthesized compounds may serve as narrow-band n-type organic semiconductors, with energy levels ranging from 2.00 to 2.28 eV, comparable to those of the best commercially available electronic semiconductors. Full article
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13 pages, 4449 KB  
Article
Design of High-Efficiency Silicon Nitride Grating Coupler with Self-Compensation for Temperature Drift
by Qianwen Lin, Yunxin Wang, Yu Zhang, Chang Liu and Wenqi Wei
Photonics 2025, 12(10), 959; https://doi.org/10.3390/photonics12100959 - 28 Sep 2025
Viewed by 481
Abstract
In order to solve the problem of the efficiency reduction and complex manufacturing of traditional grating couplers under environmental temperature fluctuations, a Si3N4 high-efficiency grating coupler integrating a distributed Bragg reflector (DBR) and thermo-optical tuning layer is proposed. In this [...] Read more.
In order to solve the problem of the efficiency reduction and complex manufacturing of traditional grating couplers under environmental temperature fluctuations, a Si3N4 high-efficiency grating coupler integrating a distributed Bragg reflector (DBR) and thermo-optical tuning layer is proposed. In this paper, the double-layer DBR is used to make the down-scattered light interfere with other light and reflect it back into the waveguide. The finite difference time domain (FDTD) method is used to simulate and optimize the key parameters such as grating period, duty cycle, incident angle and cladding thickness, achieving a coupling efficiency of −1.59 dB and a 3 dB bandwidth of 106 nm. In order to further enhance the temperature stability, the amorphous silicon (a-Si) thermo-optical material layer and titanium metal serpentine heater are embedded in the DBR. The reduction in coupling efficiency caused by fluctuations in environmental temperature is compensated via local temperature control. The simulation results show that within the wide temperature range from −55 °C to 150 °C, the compensated coupling efficiency fluctuation is less than 0.02 dB, and the center wavelength undergoes a blue shift. This design is compatible with complementary metal-oxide-semiconductor (CMOS) processes, which not only simplifies the fabrication process but also significantly improves device stability over a wide temperature range. This provides a feasible and efficient coupling solution for photonic integrated chips in non-temperature-controlled environments, such as optical communications, data centers, and automotive systems. Full article
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19 pages, 3617 KB  
Article
Supersymmetric Single-Lateral-Mode GaN-Based Ridge-Waveguide Edge-Emitting Lasers
by Łukasz Piskorski
Materials 2025, 18(19), 4453; https://doi.org/10.3390/ma18194453 - 24 Sep 2025
Viewed by 381
Abstract
High-power nitride-based edge-emitting lasers with low-divergence Gaussian beams are useful for applications including laser surgery, material processing, and 3D printing. Fundamental lateral mode operation is typically achieved using narrow or shallow ridges. However, narrow ridges limit the active region, while shallow ridges can [...] Read more.
High-power nitride-based edge-emitting lasers with low-divergence Gaussian beams are useful for applications including laser surgery, material processing, and 3D printing. Fundamental lateral mode operation is typically achieved using narrow or shallow ridges. However, narrow ridges limit the active region, while shallow ridges can allow higher-order mode lasing. To address these challenges, this study applies a supersymmetry approach using optical coupling between neighbouring ridges to confine the fundamental mode while suppressing higher-order modes. Two nitride-based edge-emitting laser configurations—double-ridge and triple-ridge waveguides—are analysed, with a focus on ridge-width tolerances and the effects of gain and absorption. Both configurations achieve strong mode discrimination. However, the triple-ridge waveguide structure exhibits a mode separation ratio more than twice that of the double-ridge waveguide, making it promising for high-power single-mode operation. The results of this study provide a basis for further study of supersymmetry effects in nitride lasers. Full article
(This article belongs to the Section Optical and Photonic Materials)
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43 pages, 11197 KB  
Review
Plasmon–Exciton Strong Coupling in Low-Dimensional Materials: From Fundamentals to Hybrid Nanophotonic Platforms
by Peipei Zhao, Chengxi Lü, Siyi Sun and Fan Wu
Nanomaterials 2025, 15(19), 1463; https://doi.org/10.3390/nano15191463 - 23 Sep 2025
Viewed by 1114
Abstract
Strong coupling has emerged as a central topic in nanophotonics, offering a powerful platform for light–matter interaction studies and advancing quantum technologies. Low-dimensional materials, such as quantum dots (QDs) and two-dimensional (2D) semiconductors, possess pronounced excitonic resonances, high stability, and size-dependent tunability, making [...] Read more.
Strong coupling has emerged as a central topic in nanophotonics, offering a powerful platform for light–matter interaction studies and advancing quantum technologies. Low-dimensional materials, such as quantum dots (QDs) and two-dimensional (2D) semiconductors, possess pronounced excitonic resonances, high stability, and size-dependent tunability, making them ideal candidates for achieving strong coupling with plasmonic structures. In this review, we systematically summarize recent progress in plasmon low-dimensional material strong coupling. We first introduce the fundamental principles and experimental methods of plasmon–exciton strong coupling, then highlight representative studies on plasmon–QDs and plasmon–2D material hybrid systems, and finally discuss recent advances in multimode strong coupling. This review will provide a comprehensive overview and offer valuable guidance for future studies in strong coupling. Full article
(This article belongs to the Section Nanophotonics Materials and Devices)
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13 pages, 3419 KB  
Article
Semiconducting Tungsten Trioxide Thin Films for High-Performance SERS Biosensors
by Hao Liu, Liping Chen, Bicheng Li, Haizeng Song, Chee Leong Tan, Yi Shi and Shancheng Yan
Nanomaterials 2025, 15(18), 1393; https://doi.org/10.3390/nano15181393 - 10 Sep 2025
Cited by 1 | Viewed by 530
Abstract
Surface-enhanced Raman Scattering (SERS) enables ultrasensitive detection but is often hindered by biocompatibility and sustainability concerns due to its reliance on noble metal substrates. To overcome these limitations, we develop a semiconductor-based SERS platform utilizing ultrathin tungsten trioxide (WO3) nanofilms synthesized [...] Read more.
Surface-enhanced Raman Scattering (SERS) enables ultrasensitive detection but is often hindered by biocompatibility and sustainability concerns due to its reliance on noble metal substrates. To overcome these limitations, we develop a semiconductor-based SERS platform utilizing ultrathin tungsten trioxide (WO3) nanofilms synthesized via a facile annealing process on fluorine-doped tin oxide (FTO). This system achieves an impressive Raman enhancement factor of 1.36 × 106, enabling ultrasensitive detection of rhodamine 6G (R6G) and methylene blue (MB) at ultralow concentrations, surpassing conventional metal-based SERS platforms. It is further suggested that this is a substrate that can be easily coupled to other metals. An application for the detection of adenine molecules is realized through layered WO3-Au NPs composites, where embedded gold nanoparticles act as plasma “hot spots” to amplify the sensitivity. Density functional theory (DFT) calculations and band structure analysis confirm that synergistic interface charge transfer and naturally formed oxygen vacancies enhance performance. By combining semiconductor compatibility with other metal amplification, this WO3-based SERS platform offers a sustainable and high-performance alternative to conventional substrates, paving the way for environmentally friendly and scalable Raman sensing technologies. Full article
(This article belongs to the Section Nanoelectronics, Nanosensors and Devices)
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76 pages, 13574 KB  
Review
Luminescence Properties of Defects in GaN: Solved and Unsolved Problems
by Michael A. Reshchikov
Solids 2025, 6(3), 52; https://doi.org/10.3390/solids6030052 - 10 Sep 2025
Viewed by 1875
Abstract
Gallium Nitride (GaN) is a wide-bandgap semiconductor that has revolutionized optoelectronic applications, enabling blue/white light-emitting devices and high-power electronics. Point defects in GaN strongly influence its optical and electronic properties, producing both beneficial and detrimental effects. This review provides a comprehensive update on [...] Read more.
Gallium Nitride (GaN) is a wide-bandgap semiconductor that has revolutionized optoelectronic applications, enabling blue/white light-emitting devices and high-power electronics. Point defects in GaN strongly influence its optical and electronic properties, producing both beneficial and detrimental effects. This review provides a comprehensive update on the current understanding of point defects in GaN and their impact on photoluminescence (PL). Since our earlier review (Reshchikov and Morkoç, J. Appl. Phys. 2005, 97, 061301), substantial progress has been made in this field. PL bands associated with major intrinsic and extrinsic defects in GaN are now much better understood, and several defects in undoped GaN (arising from unintentional impurities or specific growth conditions) have been identified. Notably, the long-debated origin of the yellow luminescence band in GaN has been resolved, and the roles of Ga and N vacancies in the optical properties of GaN have been revised. Zero-phonon lines have been discovered for several defects. Key parameters, such as electron- and hole-capture coefficients, phonon energies, electron–phonon coupling strength, thermodynamic charge transition levels, and the presence of excited states, have been determined or refined. Despite these advances, several puzzles associated with PL remain unsolved, highlighting areas for future investigation. Full article
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35 pages, 3619 KB  
Review
Research Progress on the Preparation, Modification, and Applications of g-C3N4 in Photocatalysis and Piezoelectric Photocatalysis
by Mengyang Li, Liuqing Yang, Yizhe Song, Hongru Hou, Yujie Fang, Yucheng Liu, Lihao Xie and Dingze Lu
Inorganics 2025, 13(9), 300; https://doi.org/10.3390/inorganics13090300 - 5 Sep 2025
Viewed by 1078
Abstract
The metal-free polymeric semiconductor graphitic carbon nitride (g-C3N4) has emerged as a promising material for photocatalytic applications due to its responsiveness to visible light, adjustable electronic structure, and stability. This review systematically summarizes recent advances in preparation strategies, including [...] Read more.
The metal-free polymeric semiconductor graphitic carbon nitride (g-C3N4) has emerged as a promising material for photocatalytic applications due to its responsiveness to visible light, adjustable electronic structure, and stability. This review systematically summarizes recent advances in preparation strategies, including thermal polycondensation, solvothermal synthesis, and template methods. Additionally, it discusses modification approaches such as heterojunction construction, elemental doping, defect engineering, morphology control, and cocatalyst loading. Furthermore, it explores the diverse applications of g-C3N4-based materials in photocatalysis, including hydrogen (H2) evolution, carbon dioxide (CO2) reduction, pollutant degradation, and the emerging field of piezoelectric photocatalysis. Particular attention is given to g-C3N4 composites that are rationally designed to enhance charge separation and light utilization. Additionally, the synergistic mechanism of photo–piezocatalysis is examined, wherein a mechanically induced piezoelectric field facilitates carrier separation and surface reactions. Despite significant advancements, challenges persist, including limited visible-light absorption, scalability issues, and uncertainties in the multi-field coupling mechanisms. The aim of this review is to provide guidelines for future research that may lead to the development of high-performance and energy-efficient catalytic systems in the context of environmental and energy applications. Full article
(This article belongs to the Special Issue Featured Papers in Inorganic Materials 2025)
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19 pages, 4524 KB  
Article
Short- and Long-Term Effects of Ca(OH)2/ZnO Heteronanostructure on Photosystem II Function and ROS Generation in Tomato
by Panagiota Tryfon, Julietta Moustaka, Ilektra Sperdouli, Chrysanthi Papoulia, Eleni Pavlidou, George Vourlias, Ioannis-Dimosthenis S. Adamakis, Michael Moustakas and Catherine Dendrinou-Samara
Materials 2025, 18(17), 4078; https://doi.org/10.3390/ma18174078 - 31 Aug 2025
Viewed by 632
Abstract
Among different formations, inorganic/inorganic assemblies can be considered “two in one” systems offering collective and/or new physical-chemical properties and substantial activity. Herein, a post-synthetic approach involving the assembly through Van der Waals forces and/or hydrogen bonding of the preformed ZnO@OAm NPs and Ca(OH) [...] Read more.
Among different formations, inorganic/inorganic assemblies can be considered “two in one” systems offering collective and/or new physical-chemical properties and substantial activity. Herein, a post-synthetic approach involving the assembly through Van der Waals forces and/or hydrogen bonding of the preformed ZnO@OAm NPs and Ca(OH)2@OAm NPs of non-uniform sizes (9 nm and 27 nm, respectively), albeit coated with the same surfactant (oleylamine-OAm), is reported. The resulting semiconductor hetero-nanostructure (named CaZnO) has been physicochemically characterized. The X-ray diffraction (XRD) peaks correspond to both ZnO and Ca(OH)2, confirming the successful formation of a dual-phase system. Field emission scanning electron microscopy coupled with energy-dispersive spectroscopy (FESEM-EDS) of CaZnO indicated the formation of Ca(OH)2 NPs decorated with irregular-shaped ZnO NPs. The synthesized hetero-nanostructure was evaluated by assessing any negative effects on the photosynthetic function of tomato plants as well as for the generation of reactive oxygen species (ROS). The impact of the CaZnO hetero-nanostructure on photosystem II (PSII) photochemistry was evaluated under both the growth light intensity (GLI) and a high light intensity (HLI) at a short (90 min) and long (96 h) duration exposure. An enhancement of photosystem II (PSII) function of tomato plants by 15 mg L−1 CaZnO hetero-nanostructure right after 90 min was evidenced, indicating its potential to be used as a photosynthetic biostimulant, improving photosynthetic efficiency and crop yield, but pending further testing across various plant species and cultivation conditions. Full article
(This article belongs to the Special Issue Synthesis, Assembly and Applications of Nanomaterials)
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23 pages, 3846 KB  
Article
A Sea Surface Roughness Retrieval Model Using Multi Angle, Passive, Visible Spectrum Remote Sensing Images: Simulation and Analysis
by Mingzhu Song, Lizhou Li, Yifan Zhang, Xuechan Zhao and Junsheng Wang
Remote Sens. 2025, 17(17), 2951; https://doi.org/10.3390/rs17172951 - 25 Aug 2025
Viewed by 671
Abstract
Sea surface roughness (SSR) retrieval is a frontier topic in the field of ocean remote sensing, and SSR retrieval based on multi angle, passive, visible spectrum remote sensing images has been proven to have potential applications. Traditional multi angle retrieval models ignored the [...] Read more.
Sea surface roughness (SSR) retrieval is a frontier topic in the field of ocean remote sensing, and SSR retrieval based on multi angle, passive, visible spectrum remote sensing images has been proven to have potential applications. Traditional multi angle retrieval models ignored the nonlinear relationship between radiation and digital signals, resulting in low accuracy in SSR retrieval using visible spectrum remote sensing images. Therefore, we analyze the transmission characteristics of signals and random noise in sea surface imaging, establish signals and noise transmission models for typical sea surface imaging visible spectrum remote sensing systems using Complementary Metal Oxide Semiconductor (CMOS) and Time Delay Integration-Charge Coupled Device (TDI-CCD) sensors, and propose a model for SSR retrieval using multi angle passive visible spectrum remote sensing images. The proposed model can effectively suppress the noise behavior in the imaging link and improve the accuracy of SSR retrieval. Simulation experiments show that when simulating the retrieval of multi angle visible spectrum images obtained using CMOS or TDI-CCD imaging systems with four SSR levels of 0.02, 0.03, 0.04, and 0.05, the proposed model relative errors using two angles are decreased by 4.0%, 2.7%, 2.3%, and 2.0% and 6.5%, 4.3%, 3.7%, and 3.2%, compared with the relative errors of the model without considering noise behavior, which are 7.0%, 6.7%, 7.8%, and 9.0% and 9.5%, 8.3%, 9.0%, and 10.2%. When using more fitting data, the relative errors of the model were decreased by 5.0%, 2.7%, 2.5%, and 2.0% and 7.0%, 5.0%, 4.3%, and 3.2%, compared with the relative errors of the model without considering noise behavior, which are 8.5%, 7.0%, 8.0%, and 9.4%, and 10.0%, 8.7%, 9.3%, and 10.0%. Full article
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