Search Results (37)

Silicene is a two-dimensional silicon monolayer with a band gap caused by relatively strong spin–orbit coupling. This band gap can be steered using a vertical electric field. In turn, the change in this electric field value leads to a transition from a topological insulator to a bulk insulator regime. This study aims to develop a phase-space approach to detecting the topological phase transitions in silicene induced by the presence of parallel magnetic and electric fields with the aid of the concept of topological quantum number based on the Wigner–Rényi entropy. A reinterpreted definition of the Wigner distribution function is employed to determine this indicator. The topological phase transition in silicene as a function of the electric field in the presence of the magnetic field is confirmed through the use of the topological quantum number determined for the one-half, Shannon and collision entropies. Full article

MXenes have emerged as promising candidates for energy storage and catalyst design. Through detailed density functional theory (DFT) calculations, we designed a series of new 2D composite MXene-based nanomaterials by covering excellent TM₃N₂ MXenes (TM = Nb, Ta, Mo, and W) with graphene or buckled silicene. Our findings demonstrate that this coating can lead to high catalytic activity for hydrogen evolution reactions (HER) in these composite MXene-based systems, with silicene exhibiting superior performance compared to graphene. The relevant carbon and silicon atoms in the coated materials serve as active sites for HER due to complex electron transfer processes. Additionally, doping N or P atoms into graphene/silicene, which have similar atomic radii, but larger electronegativity than C/Si atoms, can further enhance the HER activity of adjacent carbon or silicon atoms, thus endowing the composite systems with higher HER catalytic performance. Coupled with their high stability and metallic conductivity, all these composite systems show great potential as electrocatalysts for HER. These remarkable findings offer new strategies and valuable insights for designing non-precious and highly efficient MXene-based HER electrocatalysts. Full article

Charged quasiparticles, which are constrained to move on a plane, interact by means of electromagnetic (EM) fields which are not subject to this constraint, living, thus, in three-dimensional space. We have, consequently, a hybrid situation where the particles of a given system and the EM fields (through which they interact) live in different dimensions. Pseudo-Quantum Electrodynamics (PQED) is a U(1) gauge field theory that, despite being strictly formulated in two-dimensional space, precisely describes the real EM interaction of charged particles confined to a plane. PQED is completely different from QED(2 + 1), namely, Quantum Electrodynamics of a planar gauge field. It produces, for instance, the correct $1/r$ Coulomb potential between static charges, whereas QED(2 + 1) produces $lnr$ potential. In spite of possessing a nonlocal Lagrangian, it has been shown that PQED preserves both causality and unitarity, as well as the Huygens principle. PQED has been applied successfully to describe the EM interaction of numerous systems containing charged particles constrained to move on a plane. Among these are p-electrons in graphene, silicene, and transition-metal dichalcogenides; systems exhibiting the Valley Quantum Hall Effect; systems inside cavities; and bosonization in (2 + 1)D. Here, we present a review article on PQED (also known as Reduced Quantum Electrodynamics). Full article

Encapsulating Cs₄PbBr₆ quantum dots in silicon nano-sheets not only stabilizes the halide perovskite, but also takes advantage of the nano-sheet for a compatible integration with the traditional silicon semiconductor. Here, we report the preparation of un-passivated Cs₄PbBr₆ ellipsoidal nanocrystals and pseudo-spherical quantum dots in silicon nano-sheets and their enhanced photoluminescence (PL). For a sample with low concentrations of quantum dots in silicon nano-sheets, the emission from Cs₄PbBr₆ pseudo-spherical quantum dots is quenched and is dominated with Pb²⁺ ion/silicene emission, which is very stable during the whole measurement period. For a high concentration of Cs₄PbBr₆ ellipsoidal nanocrystals in silicon nano-sheets, we have observed Förster resonance energy transfer with up to 87% efficiency through the oscillation of two PL peaks when UV excitation switches between on and off, using recorded video and PL lifetime measurements. In an area of a non-uniform sample containing both ellipsoidal nanocrystals and pseudo-spherical quantum dots, where Pb²⁺ ion/silicene emissions, broadband emissions from quantum dots, and bandgap edge emissions (515 nm) appear, the 515 nm peak intensity increases five times over 30 min of UV excitation, probably due to a photon recycling effect. This irradiated sample has been stable for one year of ambient storage. Cs₄PbBr₆ quantum dots encapsulated in silicon nano-sheets can lead to applications of halide perovskite light emitting diodes (PeLEDs) and integration with traditional semiconductor materials. Full article

Two-dimensional (2D) materials have drawn extensive attention due to their exceptional characteristics and potential uses in electronics and energy storage. This investigation employs simulations using molecular dynamics to examine the mechanical and thermal transport attributes of the 2D silicene–germanene (Si-Ge) lateral heterostructure. The pre-existing cracks of the Si-Ge lateral heterostructure are addressed with external strain. Then, the effect of vacancy defects and temperature on the mechanical attributes is also investigated. By manipulating temperature and incorporating vacancy defects and pre-fabricated cracks, the mechanical behaviors of the Si-Ge heterostructure can be significantly modulated. In order to investigate the heat transport performance of the Si-Ge lateral heterostructure, a non-equilibrium molecular dynamics approach is employed. The efficient phonon average free path is obtained as 136.09 nm and 194.34 nm, respectively, in the Si-Ge heterostructure with a zigzag and armchair interface. Our results present the design and application of thermal management devices based on the Si-Ge lateral heterostructure. Full article

Two-dimensional silicon (silicene) and germanium (germanene) have attracted special attention from researchers in recent years. At the same time, highly oriented pyrolytic graphite (HOPG) and graphene are some of the promising substrates for growing silicene and germanene. However, to date, the processes occurring during the epitaxial growth of silicon and germanium on the surface of such substrates have been poorly studied. In this work, the epitaxial growth of silicon and germanium is studied directly during the process of the molecular beam epitaxy deposition of material onto the HOPG surface by reflection high-energy electron diffraction (RHEED). In addition, the obtained samples are studied by Raman spectroscopy and scanning electron microscopy. A wide range of deposition temperatures from 100 to 800 °C is considered and temperature intervals are determined for various growth modes of silicon and germanium on HOPG. Conditions for amorphous and polycrystalline growth are distinguished. Diffraction spots corresponding to the lattice constants of silicene and germanene are identified that may indicate the presence of areas of graphene-like 2D phases during epitaxial deposition of silicon and germanium onto the surface of highly oriented pyrolytic graphite. Full article

The quest for novel materials with extraordinary electronic and plasmonic properties is an ongoing pursuit in the field of materials science. The dataset provides the results of a computational study that used ab initio and semi-analytical computations to model freestanding nanosystems. We delve into the world of ribbon-like materials, specifically graphene nanoribbons, silicene nanoribbons, and germanene nanoribbons, comparing their electronic and plasmonic characteristics. Our research reveals a myriad of insights, from the tunability of band structures and the influence of an atomic number on electronic properties to the adaptability of nanoribbons for optoelectronic applications. Further, we uncover the promise of these materials for biosensing, demonstrating their plasmon frequency tunability based on charge density and Fermi velocity modification. Our findings not only expand the understanding of these quasi-1D materials but also open new avenues for the development of cutting-edge devices and technologies. This data presentation holds immense potential for future advancements in electronics, optics, and molecular sensing. Full article

In the present work, the electronic properties of doped silicene located on graphite and nickel substrates were investigated by first-principles calculations method. The results of this modeling indicate that the use of silicene as an anode material instead of bulk silicon significantly improves the characteristics of the electrode, increasing its resistance to cycling and significantly reducing the volume expansion during lithiation. Doping of silicene with phosphorus, in most cases, increases the electrical conductivity of the anode active material, creating conditions for increasing the rate of battery charging. In addition, moderate doping with phosphorus increases the strength of silicene. The behavior of the electronic properties of doped one- and two-layer silicene on a graphite substrate was studied depending on its number and arrangement of phosphorus atoms. The influence of the degree of doping with silicene/Ni heterostructure on its band gap was investigated. We considered the single adsorption of Li, Na, K, and Mg atoms and the polyatomic adsorption of lithium on free-standing silicene. Full article

Development of high-performance lithium-ion batteries (LIBs) is boosted by the needs of the modern automotive industry and the wide expansion of all kinds of electronic devices. First of all, improvements should be associated with an increase in the specific capacity and charging rate as well as the cyclic stability of electrode materials. The complexity of experimental anode material selection is now the main limiting factor in improving LIB performance. Computer selection of anode materials based on first-principles and classical molecular dynamics modeling can be considered as the main paths to success. However, even combined anodes cannot always provide high LIB characteristics and it is necessary to resort to their alloying. Transmutation neutron doping (NTD) is the most appropriate way to improve the properties of thin film silicon anodes. In this review, the effectiveness of the NTD procedure for silicene/graphite (nickel) anodes is shown. With moderate P doping (up to 6%), the increase in the capacity of a silicene channel on a Ni substrate can be 15–20%, while maintaining the safety margin of silicene during cycling. This review can serve as a starting point for meaningful selection and optimization of the performance of anode materials. Full article

The electronic transport properties and rectifying behaviors of armchair silicene nanoribbons (ASiNRs) were investigated by using first-principles density functional theory, in which the left lead was pristine ASiNR and the right lead was doped ASiNR where two phosphorus (P) atoms replaced a pair of adjacent silicon atoms in the same sublattice A (AA-P₂). Two types of AA-P₂-doped models were considered for P dopant-substitute silicon atoms at the center or edges. The results showed that the rectification behavior of the system with a large rectifying ratio could be found, which could be modulated by changing the width of the silicene nanoribbons or the position of the AA-P₂ dopant. Mechanisms were revealed to explain the rectifying behaviors and provide a theoretical basis for semiconductor rectifier devices. Full article

The advent of graphene opens up the research into two-dimensional (2D) materials, which are considered revolutionary materials. Due to its unique geometric structure, graphene exhibits a series of exotic physical and chemical properties. In addition, single-element-based 2D materials (Xenes) have garnered tremendous interest. At present, 16 kinds of Xenes (silicene, borophene, germanene, phosphorene, tellurene, etc.) have been explored, mainly distributed in the third, fourth, fifth, and sixth main groups. The current methods to prepare monolayers or few-layer 2D materials include epitaxy growth, mechanical exfoliation, and liquid phase exfoliation. Although two Xenes (aluminene and indiene) have not been synthesized due to the limitations of synthetic methods and the stability of Xenes, other Xenes have been successfully created via elaborate artificial design and synthesis. Focusing on elemental 2D materials, this review mainly summarizes the recently reported work about tuning the electronic, optical, mechanical, and chemical properties of Xenes via surface modifications, achieved using controllable approaches (doping, adsorption, strain, intercalation, phase transition, etc.) to broaden their applications in various fields, including spintronics, electronics, optoelectronics, superconducting, photovoltaics, sensors, catalysis, and biomedicines. These advances in the surface modification of Xenes have laid a theoretical and experimental foundation for the development of 2D materials and their practical applications in diverse fields. Full article

The Coulomb excitations of charge density oscillation are calculated for a double-layer heterostructure. Specifically, we consider two-dimensional (2D) layers of silicene and graphene on a substrate. From the obtained surface response function, we calculated the plasmon dispersion relations, which demonstrate how the Coulomb interaction renormalizes the plasmon frequencies. Most importantly, we have conducted a thorough investigation of how the decay rates of the plasmons in these heterostructures are affected by the Coulomb coupling between different types of two-dimensional materials whose separations could be varied. A novel effect of nullification of the silicene band gap is noticed when graphene is introduced into the system. To utilize these effects for experimental and industrial purposes, graphical results for the different parameters are presented. Full article

The phonon Boltzmann transport equation combined with first-principles calculation has achieved great success in exploring the lattice thermal conductivity ($\kappa$) of various materials. However, the convergence of the predicted $\kappa$ is a critical issue, leading to quite scattered results recorded in the literature, even for the same material. In this paper, we explore the origin for the convergence of thermal conductivity in two-dimensional (2D) materials. Two kinds of typical 2D materials, graphene and silicene, are studied, and the bulk silicon is also compared as a control system for a three-dimensional material. The effect of the cutoff radius ($r_c$) in the third-order interatomic force constants on $\kappa$ is studied for these three materials. It is found that that $\kappa$ of these three materials exhibits diverse convergence behaviors with respect to $r_c$, which coincides very well with the strength of hydrodynamic phonon transport. By further analyzing the phonon lifetime and scattering rates, we reveal that the dominance of the normal scattering process gives rise to the hydrodynamic phonon transport in both graphene and silicene, which results in long-range interaction and a large lifetime of low-frequency flexural acoustic phonons, while the same phenomenon is absent in bulk silicon. Our study highlights the importance of long-range interaction associated with hydrodynamic phonon transport in determining the thermal conductivity of 2D materials. Full article

Today, two-dimensional materials are one of the key research topics for scientists around the world. Interest in 2D materials is not surprising because, thanks to their remarkable mechanical, thermal, electrical, magnetic, and optical properties, they promise to revolutionize electronics. The unique properties of graphene-like 2D materials give them the potential to create completely new types of devices for functional electronics, nanophotonics, and quantum technologies. This paper considers epitaxially grown two-dimensional allotropic modifications of single elements: graphene (C) and its analogs (transgraphenes) borophene (B), aluminene (Al), gallenene (Ga), indiene (In), thallene (Tl), silicene (Si), germanene (Ge), stanene (Sn), plumbene (Pb), phosphorene (P), arsenene (As), antimonene (Sb), bismuthene (Bi), selenene (Se), and tellurene (Te). The emphasis is put on their structural parameters and technological modes in the method of molecular beam epitaxy, which ensure the production of high-quality defect-free single-element two-dimensional structures of a large area for promising device applications. Full article

Silicene, together with copper or nickel, is the main component of electrodes for solar cells, lithium-ion batteries (LIB) and new-generation supercapacitors. The aim of this work was to study the electronic properties and geometric structure of “silicene–Ni” and “silicene–Cu” systems intended for use as LIB electrodes. The densities of electronic states, band structures, adhesion energies and interatomic distances in the silicene–(Cu, Ni) systems were determined by ab initio calculations. Silicene on a copper substrate exhibited temperature stability in the temperature range from 200 to 800 K, while on a nickel substrate, the structure of silicene was rearranged. Adsorption energies and bond lengths in the “silicene–Cu” system were calculated in the range of Li/Si ratios from 0.125 to 0.5. The formation of the Li₂ isomer during the adsorption of lithium in a ratio to silicon of 0.375 and 0.5 was observed. Silicene was found to remain stable when placed on a copper substrate coated with a single layer of nickel. The charge redistribution caused by the addition of a nickel intermediate layer between silicene and a copper substrate was studied. Full article