Search Results (630)

By integrating cathodic arc evaporation (CAE) with magnetron sputtering (MS) or high-power impulse magnetron sputtering (HiPIMS), hard coatings with diverse multicomponent compositions can be fabricated. Depending on the deposition conditions, the coatings with nano-composite or nano-multilayered microstructures are produced. During the mixing deposition conditions, nano-composite coatings are fabricated, which can be tailored to possess combining properties of super hardness, low friction coefficient, and excellent thermal/chemical stability. For the deposition with larger rotating periods, layer-by-layer deposition was observed. By the nano-multilayered coating design, superior mechanical properties (hardness ≥ 35 GPa), modulated residual stresses, and enhanced high-temperature properties can be obtained. In addition, lubricious elements, low friction (friction coefficient < 0.4), and low wear (<10⁻⁵ mm³/N∙m) both at ambient temperature and high temperature can be realized. Among these coatings, some have been specifically designed to achieve outstanding cutting performance in high-speed cutting applications. Several nitride and oxide hard coatings, such as AlTiN, TiAlN/TiSiN, AlCrN/Cu, and AlCrO, were deposited using a hybrid industrial physical vapor deposition (PVD) coating system. The microstructure, mechanical properties, and cutting performance of these coatings will be discussed. Full article

Aluminum nitride (AlN) is a material of wide interest in the optoelectronics and high-power electronics industry. The deposition of AlN thin films at elevated temperatures is a well-established process, but its implementation on flexible substrates with conductive oxides, such as ITO-glass or ITO-PET, poses challenges due to the thermal degradation of these materials. In this work, the deposition and characterization of AlN thin films by reactive sputtering at a low temperature (RT and 100 °C) on ITO-glass and ITO-PET substrates are presented. The structural, optical, and electrical properties of the samples have been analysed as a function of the sputtering power and the deposition temperature. XRD analysis revealed the absence of peaks of crystalline AlN, indicative of the formation of an amorphous phase. EDX measurements performed on the ITO-glass substrate with a radiofrequency power applied to the Al target of 175 W confirmed the presence of Al and N, corroborating the deposition of AlN. SEM analyses showed the formation of homogeneous and compact layers, and transmission optical measurements revealed a bandgap of around 5.82 eV, depending on the deposition conditions. Electrical resistivity measurements indicated an insulating character. Overall, these findings confirm the potential of amorphous AlN for applications in flexible optoelectronic devices. Full article

Graphene/h-BN/Si heterostructures show considerable potential for future use in infrared detection and photovoltaic technologies due to their adjustable electrical behavior and well-matched interfacial structure. The near-lattice match between graphene and hexagonal boron nitride (h-BN) enables the deposition of low-defect-density graphene on h-BN surfaces. This study presents a thorough exploration of the low-frequency electrical noise behavior of graphene/h-BN/Si heterojunctions under both forward and reverse bias conditions at room temperature. Graphene nanolayers were directly grown on h-BN films using microwave plasma-enhanced CVD. The h-BN layers were formed by reactive high-power impulse magnetron sputtering (HIPIMS). Four h-BN thicknesses were examined: 1 nm, 3 nm, 5 nm, and 15 nm. A reference graphene/Si junction (without h-BN) prepared under identical synthesis conditions was also studied for comparison. Low-frequency noise analysis enabled the identification of dominant charge transport mechanisms in the different device structures. Our results demonstrate that grain boundaries act as dominant defects contributing to increased noise intensity under high forward bias. Statistical analysis of voltage noise spectral density across multiple samples, supported by Raman spectroscopy, reveals that hydrogen-related defects significantly contribute to 1/f noise in the linear region of the junction’s current–voltage characteristics. This study provides the first in-depth insight into the impact of h-BN interlayers on low-frequency noise in graphene/Si heterojunctions. Full article

We investigate TiAlZrTaNb nitride coatings deposited on Haynes 282 nickel superalloy substrates via high-power impulse magnetron sputtering (HiPIMS) under varying substrate bias voltages (0 V to −75 V). The influence of substrate bias on the microstructure, morphology, hardness, and wear resistance was systematically analyzed using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), nanoindentation, and ball-on-disk tribometry. The coatings exhibited a near equiatomic chemical composition with a face-centered cubic (FCC) crystal structure preferentially oriented along the (200) and (111) planes. Increasing the bias voltage reduced the grain size (3.65 nm to 2.84 nm) and lattice parameter (0.442 nm to 0.440 nm); meanwhile, the hardness (>45 GPa) and wear resistance were improved. The interplay between the deposition parameters and coating-substrate interactions are discussed in order to optimize HiPIMS-derived coatings for industrial applications. Full article

Diamond–copper composites, due to their exceptional thermal conductivity, hold significant potential in the field of electronic device thermal management. Hot-press sintering is a promising fabrication technique with industrial application prospects; however, the thermal conductivity of composites prepared by this method has yet to reach optimal levels. In this study, tungsten was deposited on the surface of diamond particles by magnetron sputtering as an interfacial transition layer, and hot-press sintering was employed to fabricate the composites. The findings reveal that with prolonged annealing time, tungsten gradually transformed into W₂C and WC, significantly enhancing interfacial bonding strength. When the diamond volume content was 50% and the interfacial coating consisted of 2 wt.% W, 92 wt.% WC, and 6 wt.% W₂C, the composite exhibited a thermal conductivity of 640 W/(m·K), the highest value reported among hot-press sintered composites with diamond content below 50%. Additionally, the AMM (Acoustic Mismatch Model) and DMM (Diffusion Mismatch Model) models were utilized to calculate the interfacial thermal conductance between different phases, identifying the optimal interfacial structure as diamond/W₂C/WC/W₂C/Cu. This composite material shows potential for application in high-power electronic device cooling, thermal management systems, and thermoelectric conversion, providing a more efficient thermal dissipation solution for related devices. Full article

We successfully fabricated micro orthogonal fluxgate sensors using amorphous CoZrNb films. The sensor, measuring 1.5 mm × 0.5 mm, consists of three main parts: the conductor for excitation current flow, the magnetic layer sensitive to an external magnetic field, and the detection coil for measuring output voltage dependent on an external magnetic field. The magnetic layer forms a magnetically closed-circuit in the cross-section, which reduces reluctance and power consumption. Key fabrication challenges, such as poor step coverage and delamination, were effectively addressed by adjusting the sputtering angle, rotating the substrate during deposition, incorporating a Ta adhesion layer, and applying O₂ plasma surface treatment. Optimal sensor performance was achieved by vacuum annealing the CoZrNb films at 300 °C under an applied magnetic field of 500 Oe. This process effectively enhanced magnetic softness and induced magnetic anisotropy, resulting in both very low coercivity (0.1 Oe) and a stable amorphous structure. The effects of operation frequency and the conductor width on the output characteristics of the fabricated sensors were quantitatively investigated. The sensor exhibited a maximum sensitivity of 0.98 mV/Oe (=9.8 V/T). Our results demonstrate that miniaturized orthogonal fluxgate sensors suitable for multi-chip packaging can be applied to measure the Earth’s magnetic field. Full article

Integrating two-dimensional transition-metal dichalcogenides with graphene is attractive for low-power memory and neuromorphic hardware, yet sequential wet transfer leaves polymer residues and high contact resistance. We demonstrate a complementary metal–oxide–semiconductor (CMOS)-compatible, transfer-free route in which an atomically thin amorphous MoS₂ precursor is RF-sputtered directly onto chemical vapor-deposited few-layer graphene and crystallized by confined-space sulfurization at 800 °C. Grazing-incidence X-ray reflectivity, Raman spectroscopy, and X-ray photoelectron spectroscopy confirm the formation of residue-free, three-to-four-layer 2H-MoS₂ (roughness: 0.8–0.9 nm) over 1.5 cm × 2 cm coupons. Lateral MoS₂/graphene devices exhibit reproducible non-volatile resistive switching with a set transition (SET) near +6 V and an analogue ON/OFF ≈2.1, attributable to vacancy-induced Schottky-barrier modulation. The single-furnace magnetron sputtering + sulfurization sequence avoids toxic H₂S, polymer transfer steps, and high-resistance contacts, offering a cost-effective pathway toward wafer-scale 2D memristors compatible with back-end CMOS temperatures. Full article

With the increasing complexity and integration density of System-in-Package (SiP) technologies, the demand for selective electromagnetic interference (EMI) shielding is growing. Conventional sputtering processes, while effective for conformal EMI shielding, lack selectivity and often require additional masking or post-processing steps. In this study, we propose a novel, laser-based approach for the selective removal of EMI shielding layers without physical masking. Numerical simulations were conducted to investigate the thermal and mechanical behavior of multilayer EMI shielding structures under two irradiation modes: full-area and laser scanning. The results showed that the laser scanning method induced higher interfacial shear stress, reaching up to 38.6 MPa, compared to full-area irradiation (12.5 MPa), effectively promoting delamination while maintaining the integrity of the underlying epoxy mold compound (EMC). Experimental validation using a nanosecond pulsed fiber laser confirmed that complete removal of the EMI shielding layer could be achieved at optimized laser powers (~6 W) without damaging the EMC, whereas excessive power (8 W) caused material degradation. The laser scanning speed was 50 mm/s, and the total laser irradiation time of the package was 0.14 s, which was very fast. This study demonstrates the feasibility of a non-contact, damage-free, and selective EMI shielding removal technique, offering a promising solution for next-generation semiconductor packaging. Full article

Magnetron Sputter Vacuum Deposition (MSVD) has undergone significant advancements since its inception. This review explores the evolution of MSVD, encompassing its fundamental principles, various techniques (including reactive sputtering, pulsed magnetron sputtering, and high-power impulse magnetron sputtering), and its wide-ranging industrial applications. While detailing the advantages of high deposition rates, versatility in material selection, and precise control over film properties, the review also addresses inherent challenges such as low target utilization and plasma instability. A significant portion focuses on the crucial role of MSVD in the automotive industry, highlighting its use in creating durable, high-quality coatings for both aesthetic and functional purposes. The transition from traditional electroplating methods to more environmentally friendly MSVD techniques is also discussed, emphasizing the growing demand for sustainable manufacturing processes. This review concludes by summarizing the key advancements, remaining challenges, and potential future trends in magnetron sputtering technologies. Full article

Ag₂Se has attracted significant attention as a promising alternative to Bi₂Te₃ for near-room-temperature thermoelectric (TE) applications. In this study, flexible Ag₂Se thin films were fabricated via magnetron sputtering under different sputtering power settings, followed by post-deposition annealing to optimize their TE properties. Structural and compositional analyses confirmed the successful synthesis of Ag₂Se films with high crystallinity. Additionally, tuning the sputtering power and annealing temperatures can effectively enhance the electrical conductivity, Seebeck coefficient, and overall power factor. A significant power factor of ~17.4 µW·cm⁻¹·K⁻² at 100 °C was achieved in the 30 W sputtering power and 300 °C annealing sample, pointing out the huge potential of Ag₂Se thin films as self-powered flexible devices. Full article

This study examines the effect of oxygen concentration and sputtering power on the surface morphology of TiO₂ thin films deposited by DC reactive magnetron sputtering. Surface roughness parameters were obtained using MountainsMap^® software(10.2) from SEM images, while fractal dimensions and texture descriptors were extracted via Python-based image processing. Fractal dimension was calculated using the box-counting method applied to binarized images with multiple threshold levels, and texture analysis employed Gray-Level Co-occurrence Matrix (GLCM) statistics to capture local anisotropies and spatial heterogeneity. Four samples were analyzed, previously prepared with oxygen concentrations of 50% and 75%, and sputtering powers of 500 W and 1000 W. The results have shown that films deposited at higher oxygen levels and sputtering powers exhibited increased roughness, higher fractal dimensions, and stronger GLCM contrast, indicating more complex and heterogeneous surface structures. Conversely, films produced at lower oxygen and power settings showed smoother, more isotropic surfaces with lower complexity. This integrated analysis framework links deposition parameters with morphological characteristics, enhancing the understanding of surface evolution and enabling better control of TiO₂ thin film properties. Full article

To address the limitations of single-layer nitride coatings, such as poor load adaptability and low long-term durability, MoN/TiN multilayer coatings were prepared via high-power impulse magnetron sputtering (HiPIMS). HiPIMS produces highly ionized plasmas that enable intense ion bombardment, yielding nitride films with enhanced mechanical strength, durability, and thermal stability versus conventional methods. The multilayer coating demonstrated a low coefficient of friction (COF, ~0.4) and wear rate (1.31 × 10⁻⁷ mm³/[N·m]). In contrast, both TiN and MoN coatings failed at 5 N and 10 N loads, respectively. Under increasing loads, the multilayer coating maintained stable wear rates (1.84–3.06 × 10⁻⁷ mm³/[N·m]) below 20 N, and ultimately failed at 25 N. Furthermore, the MoN layer contributes to COF reduction. Grazing-incidence X-ray diffraction analysis confirmed the enhanced crystallographic stability of the multilayer coating, thereby revealing a dominant (111) orientation. The multilayer architecture suppresses crack propagation while effectively balancing hardness and toughness, offering a promising design for extreme-load applications. Full article

Aluminum nitride (AlN) thin films were deposited on SiO₂ substrates by RF-magnetron sputtering at varying powers (110–140 W) and subsequently subjected to thermal annealing at 450 °C under nitrogen atmosphere. A comprehensive multi-technique investigation—including X-ray reflectometry (XRR), X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), optical profilometry, spectroscopic ellipsometry (SE), and electrical measurements—was performed to explore the physical structure, morphology, and optical and electrical properties of the films. The analysis of the film structure by XRR revealed that increasing sputtering power resulted in thicker, denser AlN layers, while thermal treatment promoted densification by reducing density gradients but also induced surface roughening and the formation of island-like morphologies. Optical studies confirmed excellent transparency (>80% transmittance in the near-infrared region) and demonstrated the tunability of the refractive index with sputtering power, critical for optoelectronic applications. The electrical characterization of Au/AlN/Al sandwich structures revealed a transition from Ohmic to trap-controlled space charge limited current (SCLC) behavior under forward bias—a transport mechanism frequently present in a material with very low mobility, such as AlN—while Schottky conduction dominated under reverse bias. The systematic correlation between deposition parameters, thermal treatment, and the resulting physical properties offers valuable pathways to engineer AlN thin films for next-generation optoelectronic and high-frequency device applications. Full article

This study investigates the fabrication, nanomechanical behavior, and tribological performance of nanostructured superlattice coatings (NSCs) composed of alternating TiAlSiNb-N/TiCr-CN bilayers. Deposited via High-Power Ion-Plasma Magnetron Sputtering (HiPIPMS) onto 100Cr6 steel substrates, the coatings achieved nanohardness values of ~25 GPa and elastic moduli up to ~415 GPa. A novel empirical method was applied to extract stress–strain field (SSF) gradient and divergence profiles from nanoindentation load–displacement data. These profiles revealed complex, depth-dependent oscillations attributed to alternating strain-hardening and strain-softening mechanisms. Fourier analysis identified dominant spatial wavelengths, DWL, ranging from 4.3 to 42.7 nm. Characteristic wavelengths WL1 and WL2, representing fine and coarse oscillatory modes, were 8.2–9.2 nm and 16.8–22.1 nm, respectively, aligning with the superlattice period and grain-scale features. The hyperfine structure exhibited non-stationary behavior, with dominant wavelengths decreasing from ~5 nm to ~1.5 nm as the indentation depth increased. We attribute the SSF gradient and divergence spatial oscillations to alternating strain-hardening and strain-softening deformation mechanisms within the near-surface layer during progressive loading. This cyclic hardening–softening behavior was consistently observed across all NSC samples, suggesting it represents a general phenomenon in thin film/substrate systems under incremental nanoindentation loading. The proposed SSF gradient–divergence framework enhances nanoindentation analytical capabilities, offering a tool for characterizing thin-film coatings and guiding advanced tribological material design. Full article

By adjusting NiCr target power, five CrNiBN coatings with different Ni contents were fabricated on 45 steel by magnetron sputtering with the aim of improving corrosion resistance of CrBN coatings in seawater. The structure and morphology of CrNiBN coatings were characterized by X-ray diffraction and scanning electron microscope, while its electrochemical properties were evaluated by open circuit potential, electrochemical impedance spectroscopy, and potential dynamic polarization. The results demonstrated that Ni incorporation could reduce the surface porosity of CrBN coatings from 16.8% to 7.7% as Ni content increased from 4.35 at% to 19.62 at%. On this basis, when Ni increased from 4.35 at% to 7.28 at%, self-corrosion potential gradually increased, which prompted the CrNiBN coating with 7.28 at% Ni to present the highest charge transfer resistance R_ct of 1.965 × 10⁴ Ω·cm² and the highest polarization resistance R_p of 74.9 kΩ·cm². However, more Ni doping from 12.54 at% to 19.62 at% would decrease self-corrosion potential and trigger oxidation. Consequently, the CrNiBN coatings with Ni content from 12.54 at% to 19.62 at% presented decreasing R_ct and R_p. Even so, the corrosion resistance of the CrNiBN coating was still better than that of CrBN coating indicating an improved corrosion inhibition efficiency by 12.53 times. Full article