Investigation of the Electrical Characteristics of Bilayer ZnO/In2O3 Thin-Film Transistors Fabricated by Solution Processing
Abstract
:1. Introduction
2. Materials and Methods
3. Results and Discussion
4. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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TFT | Threshold Voltage (V) | Mobility (cm2/Vs) | Ion/Ioff | △VTH (V) |
---|---|---|---|---|
ZnO | - | - | - | - |
In2O3 | 2.4 ± 0.1 | 0.3 ± 0.1 | 2.1 × 106 | 3.9 |
ZnO/In2O3 | 1.8 ± 0.2 | 0.5 ± 0.1 | 3.4 × 106 | 3.8 |
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Lee, H.; Zhang, X.; Kim, J.W.; Kim, E.-J.; Park, J. Investigation of the Electrical Characteristics of Bilayer ZnO/In2O3 Thin-Film Transistors Fabricated by Solution Processing. Materials 2018, 11, 2103. https://doi.org/10.3390/ma11112103
Lee H, Zhang X, Kim JW, Kim E-J, Park J. Investigation of the Electrical Characteristics of Bilayer ZnO/In2O3 Thin-Film Transistors Fabricated by Solution Processing. Materials. 2018; 11(11):2103. https://doi.org/10.3390/ma11112103
Chicago/Turabian StyleLee, Hyeonju, Xue Zhang, Jung Won Kim, Eui-Jik Kim, and Jaehoon Park. 2018. "Investigation of the Electrical Characteristics of Bilayer ZnO/In2O3 Thin-Film Transistors Fabricated by Solution Processing" Materials 11, no. 11: 2103. https://doi.org/10.3390/ma11112103