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Journal: Materials, 2018
Volume: 11
Number: 824

Article: Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment
Authors: by Ching-Lin Fan, Fan-Ping Tseng and Chiao-Yuan Tseng
Link: https://www.mdpi.com/1996-1944/11/5/824

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