Next Article in Journal
Correction: Ungson, Y. et al. Filling of Irregular Channels with Round Cross-Section: Modeling Aspects to Study the Properties of Porous Materials. Materials 2018, 11, 1901
Next Article in Special Issue
Structural and Electrical Characterization of 2” Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production
Previous Article in Journal
Partial Discharge in Nanofluid Insulation Material with Conductive and Semiconductive Nanoparticles
Previous Article in Special Issue
Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O3 Gate Dielectrics
 
 
Article

Article Versions Notes

Materials 2019, 12(5), 817; https://doi.org/10.3390/ma12050817
Action Date Notes Link
article xml file uploaded 11 March 2019 07:22 CET Original file -
article xml uploaded. 11 March 2019 07:22 CET Update https://www.mdpi.com/1996-1944/12/5/817/xml
article pdf uploaded. 11 March 2019 07:22 CET Version of Record https://www.mdpi.com/1996-1944/12/5/817/pdf
article html file updated 11 March 2019 07:23 CET Original file -
article html file updated 18 March 2019 17:27 CET Update -
article html file updated 4 April 2019 10:50 CEST Update -
article html file updated 12 April 2019 00:17 CEST Update -
article html file updated 26 April 2019 05:08 CEST Update -
article html file updated 16 October 2019 09:11 CEST Update -
article html file updated 11 February 2020 21:18 CET Update -
article html file updated 19 July 2022 16:10 CEST Update https://www.mdpi.com/1996-1944/12/5/817/html
Back to TopTop