Next Article in Journal
Green Synthesis, Molecular Characterization and Associative Behavior of Some Gemini Surfactants without a Spacer Group
Previous Article in Journal
Mechanical Properties and Microstructure of Class C Fly Ash-Based Geopolymer Paste and Mortar
Article Menu

Export Article

Open AccessArticle
Materials 2013, 6(4), 1496-1505; doi:10.3390/ma6041496

Randomness and Statistical Laws of Indentation-Induced Pop-Out in Single Crystal Silicon

College of Mechanical Science & Engineering, Jilin University, Renmin Street 5988, Changchun 130025, China
*
Author to whom correspondence should be addressed.
Received: 6 February 2013 / Accepted: 2 April 2013 / Published: 12 April 2013
View Full-Text   |   Download PDF [481 KB, uploaded 12 April 2013]   |  

Abstract

Randomness and discreteness for appearance of pop-out of the single crystal silicon with a (100) orientation were studied by a self-made indentation device. For a given maximum penetration load, the load Ppo for appearance of pop-out fluctuates in a relatively large range, which makes it hard to study the effect of the loading/unloading rate on the load Ppo. Experimental results with different maximum penetration loads indicate that the critical penetration load for appearance of pop-out is in the range of 15 mN~20 mN for the current used single crystal silicon. For a given maximum penetration load, the load Ppo for appearance of pop-out seems random and discrete, but in the point of statistics, it has an obviously increasing trend with increase of the maximum penetration load and also the fraction Ppo/Pmax approximately keeps in the range of 0.2~0.5 for different maximum penetration loads changing from 15 mN to 150 mN. View Full-Text
Keywords: pop-out; single crystal silicon; maximum penetration load; loading/unloading rate; statistic pop-out; single crystal silicon; maximum penetration load; loading/unloading rate; statistic
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Huang, H.; Zhao, H.; Shi, C.; Zhang, L.; Wan, S.; Geng, C. Randomness and Statistical Laws of Indentation-Induced Pop-Out in Single Crystal Silicon. Materials 2013, 6, 1496-1505.

Show more citation formats Show less citations formats

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Materials EISSN 1996-1944 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top