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Materials 2013, 6(4), 1496-1505; doi:10.3390/ma6041496
Article

Randomness and Statistical Laws of Indentation-Induced Pop-Out in Single Crystal Silicon

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College of Mechanical Science & Engineering, Jilin University, Renmin Street 5988, Changchun 130025, China
* Author to whom correspondence should be addressed.
Received: 6 February 2013 / Accepted: 2 April 2013 / Published: 12 April 2013
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Abstract

Randomness and discreteness for appearance of pop-out of the single crystal silicon with a (100) orientation were studied by a self-made indentation device. For a given maximum penetration load, the load Ppo for appearance of pop-out fluctuates in a relatively large range, which makes it hard to study the effect of the loading/unloading rate on the load Ppo. Experimental results with different maximum penetration loads indicate that the critical penetration load for appearance of pop-out is in the range of 15 mN~20 mN for the current used single crystal silicon. For a given maximum penetration load, the load Ppo for appearance of pop-out seems random and discrete, but in the point of statistics, it has an obviously increasing trend with increase of the maximum penetration load and also the fraction Ppo/Pmax approximately keeps in the range of 0.2~0.5 for different maximum penetration loads changing from 15 mN to 150 mN.
Keywords: pop-out; single crystal silicon; maximum penetration load; loading/unloading rate; statistic pop-out; single crystal silicon; maximum penetration load; loading/unloading rate; statistic
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).
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Huang, H.; Zhao, H.; Shi, C.; Zhang, L.; Wan, S.; Geng, C. Randomness and Statistical Laws of Indentation-Induced Pop-Out in Single Crystal Silicon. Materials 2013, 6, 1496-1505.

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