Full-Field Strain Mapping at a Ge/Si Heterostructure Interface
AbstractThe misfit dislocations and strain fields at a Ge/Si heterostructure interface were investigated experimentally using a combination of high-resolution transmission electron microscopy and quantitative electron micrograph analysis methods. The type of misfit dislocation at the interface was determined to be 60° dislocation and 90° full-edge dislocation. The full-field strains at the Ge/Si heterostructure interface were mapped by using the geometric phase analysis (GPA) and peak pairs analysis (PPA), respectively. The effect of the mask size on the GPA and PPA results was analyzed in detail. For comparison, the theoretical strain fields of the misfit dislocations were also calculated by the Peierls-Nabarro and Foreman dislocation models. The results showed that the optimal mask sizes in GPA and PPA were approximately three tenths and one-tenth of the reciprocal lattice vector, respectively. The Foreman dislocation model with an alterable factor a = 4 can best describe the strain field of the misfit dislocation at the Ge/Si heterostructure interface.
Scifeed alert for new publicationsNever miss any articles matching your research from any publisher
- Get alerts for new papers matching your research
- Find out the new papers from selected authors
- Updated daily for 49'000+ journals and 6000+ publishers
- Define your Scifeed now
Li, J.; Zhao, C.; Xing, Y.; Su, S.; Cheng, B. Full-Field Strain Mapping at a Ge/Si Heterostructure Interface. Materials 2013, 6, 2130-2142.
Li J, Zhao C, Xing Y, Su S, Cheng B. Full-Field Strain Mapping at a Ge/Si Heterostructure Interface. Materials. 2013; 6(6):2130-2142.Chicago/Turabian Style
Li, Jijun; Zhao, Chunwang; Xing, Yongming; Su, Shaojian; Cheng, Buwen. 2013. "Full-Field Strain Mapping at a Ge/Si Heterostructure Interface." Materials 6, no. 6: 2130-2142.