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Journal: Micromachines, 2019
Volume: 10
Number: 281

Article: Effect of Electrode Material on the Crystallization of GeTe Grown by Atomic Layer Deposition for Phase Change Random Access Memory
Authors: by Seung Ik Oh, In Hyuk Im, Chanyoung Yoo, Sung Yeon Ryu, Yong Kim, Seok Choi, Taeyong Eom, Cheol Seong Hwang and Byung Joon Choi
Link: https://www.mdpi.com/2072-666X/10/5/281

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