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Journal: Electronics, 2022
Volume: 11
Number: 3392
Article:
Tunnel FET and MOSFET Hybrid Integrated 9T SRAM with Data-Aware Write Technique for Ultra-Low Power Applications
Authors:
by
Wenjuan Lu, Yixiao Lu, Lanzhi Dong, Chunyu Peng, Xiulong Wu, Zhiting Lin and Junning Chen
Link:
https://www.mdpi.com/2079-9292/11/20/3392
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