New Applications of Ion Beams in Modification and Creation of Nanostructures

A special issue of Coatings (ISSN 2079-6412).

Deadline for manuscript submissions: closed (31 May 2019) | Viewed by 4760

Special Issue Editor


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Guest Editor
Colleges of Nanoscale Science and Engineering, State University of New York Polytechnic Institute, Albany, NY 12203, USA

Special Issue Information

Dear Colleagues,

Ion beams of energy from tens to hundreds of keV to MeV have provided a powerful means to tailor material properties through atomic doping, ion sputtering and defect engineering processes. For example, ion implantation of dopant atoms in semiconductors is a standard microelectronics technology for modulating the semiconductor conduction properties. As recent research efforts are geared toward the search and synthesis of novel nanostructured materials, it is interesting to explore the applications of energetic ion beams in modifying the properties of a variety of nanomaterials that have been discovered, as well as in creating nanostructures within existing materials. These ion-beam created or modified nanomaterials and nanostructures could find potential applications in areas related to advanced computing, energy harnessing, quantum information technology and biochemical detection. This special issue will introduce and review recent research work on the following topics:

This special issue will introduce and review recent research work on the following topics:

  • Ion beam modification of nanoscale surfaces;
  • Ion beam doping in nanowires and two dimensional materials;
  • Ion beam synthesis of nanostructures within materials;
  • Ion beam creation of atomic-like photonic and magnetic devices;
  • Focused ion beam processing and fabrication;
  • Single ion implantation.

Prof. Dr. Mengbing Huang
Guest Editor

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Published Papers (1 paper)

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Research

10 pages, 3141 KiB  
Article
The Influence of Oxygen Flow Ratio on the Optoelectronic Properties of p-Type Ni1−xO Films Deposited by Ion Beam Assisted Sputtering
by Hui Sun, Sheng-Chi Chen, Wen-Chi Peng, Chao-Kuang Wen, Xin Wang and Tung-Han Chuang
Coatings 2018, 8(5), 168; https://doi.org/10.3390/coatings8050168 - 30 Apr 2018
Cited by 12 | Viewed by 4432
Abstract
In this work, p-type non-stoichiometric Ni1−xO thin films were deposited by oxygen ion beam assisted RF sputtering on glass substrates. The influence of the oxygen flow ratio (0–100%) on the films’ optoelectronic properties was investigated. In our experimental conditions, all [...] Read more.
In this work, p-type non-stoichiometric Ni1−xO thin films were deposited by oxygen ion beam assisted RF sputtering on glass substrates. The influence of the oxygen flow ratio (0–100%) on the films’ optoelectronic properties was investigated. In our experimental conditions, all the films are crystallized in the cubic NiO phase. However, their crystallinity and mean grain size decreases with increasing oxygen flow ratios. Meanwhile, the films’ conductivity improves from 9.1 to 25.4 S·cm−1. This is due to the fact that the nickel vacancies along with hole carriers can be introduced into NiO films when they are deposited under higher oxygen flow ratio conditions. Thus, the O-rich environment is beneficial in enhancing the films’ carrier concentrations. In addition, with an increasing oxygen flow ratio, the film’s transmittance degrades. The direct optical band gap of Ni1−xO films declines slightly from 3.99 to 3.95 eV, with the oxygen flow ratio increasing from 0% to 100%. Full article
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