Advances in Si-Based Semiconductor Materials, Devices and Their Optoelectronic Application

Dear Colleagues,

Si-based monolithic optoelectronic integrated circuits (OEICs) were devoted to realizing low-cost, high efficiency, low-power consumption, high speed, and low loss data transmission on mono-substrate due to their low costs, compatibility with CMOS technology, miniaturization, and high integration density. Several Si-based material platforms, including, Ge, GeSn, InP, GaAs, and InGaAs, have considerable progress in research and development, or even production. Based on these material platforms, significant semiconductor devices, such as lasers, waveguides, (avalanche) photodiodes, modulators, and transistors (including, planar MOSFETs, FinFETs, GAAFETs, etc.), were extensively investigated. OEICs technology contributes to the the development of low-cost, low-power consumption, high-speed and multi-functionality ICs, which had partly been used in the optical communications, vehicle LIDAR, optical quantum information, optical computing, and optical imaging areas. However, this field is now facing the such bottleneck problems: I) Si-based high-efficiency light source: it is difficult to achieve high-efficiency emission due to the facts that Si is an indirect bandgap semiconductor and its light emission efficiency is about five orders of magnitude lower than that of direct band gap III–V compound semiconductors; II) large device size contrast between photonic devices and electronic devices, which hinders the fully monolithic integration both photonic devices and electronic devices on mono-substrate; III) especially for optical imaging application, polarization 3D imaging, photoacoustic imaging and super-resolution imaging still has large development space so as to improving the imaging quality; IV) performance of waveguides, (avalanche) photodiodes, modulators and transistors still needs to be improved for large-scale integration. Thus, bottleneck problems are related to the material, electronic device, photonic device, device fabrication, device characterization, and optical imaging. This Special Issue aims to cover various aspects of the recent advances in Si-based materials, semiconductor devices and their optoelectronic application, including but not limited to:

• Material design and property
• Material growth and characterization
• Advanced substrate design and development
• Electronic device design and simulation
• Photonic device design and simulation
• Device fabrication and characterization
• Computational optical imaging
• Photoacoustic spectroscopy
• Monolithic optoelectronic integrated chip

Dr. Jiuren Zhou
Dr. Xuan Li
Dr. Yuanhao Miao
Guest Editors

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• material design and property 
• material growth and characterization 
• advanced substrate design and development 
• electronic device design and simulation 
• photonic device design and simulation 
• device fabrication and characterization 
• computational optical imaging 
• photoacoustic spectroscopy 
• monolithic optoelectronic integrated chip