Advanced Non-Volatile Memory Devices and Systems

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Microelectronics".

Deadline for manuscript submissions: 15 October 2024 | Viewed by 164

Special Issue Editors


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Guest Editor
Institut Matériaux Microélectronique et Nanosciences de Provence (IM2NP), CNRS, Aix-Marseille University, 13453 Marseille, France
Interests: non-volatile memories; MRAM; TCAD simulation; reliability; security
Special Issues, Collections and Topics in MDPI journals

E-Mail Website
Guest Editor
Institut Matériaux Microélectronique et Nanosciences de Provence (IM2NP), CNRS, Aix-Marseille University, 13453 Marseille, France
Interests: non-volatile memories; PCM; OxRAM; electrical characterization; reliability; modeling

Special Issue Information

Dear Colleagues,

Advanced non-volatile memory devices and systems have had a profound impact on the field of data storage and computing, revolutionizing the way we store, access, and manage information. These technologies have significantly improved data transfer speeds, energy efficiency, and overall performance in various electronic devices.

One major impact of advanced non-volatile memory devices is their role in modern storage solutions. Traditional hard disk drives (HDDs) have been gradually replaced by solid-state drives (SSDs) based on technologies like NAND Flash and 3D XPoint, offering much faster read and write speeds, reduced power consumption, and enhanced reliability.

Furthermore, non-volatile memory has become an essential component in mobile devices, such as smartphones and tablets. These devices require fast and reliable memory to store and access data promptly, enabling seamless user experiences. Non-volatile memory also contributes to the longevity of data in case of power interruptions, safeguarding critical information.

In the realm of data centers and cloud computing, advanced non-volatile memory technologies have played a crucial role in enhancing data storage and retrieval efficiency. The rapid adoption of solid-state drives in data centers has led to reduced latency and improved data access times, resulting in better performance for cloud-based services and applications.

Another significant impact is in the Internet of Things (IoT) domain. Non-volatile memory provides low-power and durable storage solutions for the vast amounts of data generated by IoT devices, enabling edge computing capabilities and real-time data analysis without relying heavily on cloud services.

Furthermore, advanced non-volatile memory devices have enabled the development of novel computing architectures, such as neuromorphic computing and in-memory computing. These architectures leverage the unique properties of non-volatile memory to perform specific tasks efficiently, such as pattern recognition and associative memory tasks.

In conclusion, this Special Issue is dedicated to advanced non-volatile memory devices and systems.

Dr. Jérémy Postel-Pellerin
Dr. Vincenzo Della Marca
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • non-volatile memories
  • OxRAM
  • MRAM
  • FeRAM
  • PCM
  • Flash
  • reliability
  • architecture
  • circuit design

Published Papers

This special issue is now open for submission.
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