III-Nitride Semiconductors Thin Film and Nanostructured Material, Properties, Electronic, Optoelectronic, and Ferroelectric Applications

Dear Colleagues,

III-nitride semiconductors have garnered significant attention due to their compelling applications in solid-state lighting and power devices, playing a pivotal role in the advancement of next-generation optoelectronic and electronic devices. Emerging properties such as ferroelectricity, ferromagnetism, and superconductivity are being integrated into III-nitrides, enhancing their potential for applications in advanced semiconductor and quantum technologies of the future. The recent experimental evidence of ferroelectricity in nitride materials, including ScAl(Ga)N, and AlBN has sparked significant research enthusiasm. The Nitride ferroelectrics is regarded as a promising material for the development of cutting-edge microelectronic memory, acoustic devices, and quantum devices, potentially catalyzing the convergence and enhanced functionality of ferroelectric properties with microelectronics.

This Special Issue is to delve into the III-nitride semiconductors, encompassing structural, properties and various epitaxial processes. Additionally, it aims to investigate the application of III-nitride semiconductors in electronic, optoelectronic, and ferroelectric fields. We warmly invite submissions of both research papers and review articles.

We look forward to receiving your submissions. 

Dr. Tao Wang
Guest Editor

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• III-nitride semiconductors
• epitaxy
• electronic, optoelectronic and ferroelectric applications and devices