Simulation Study of Nanoelectronics

Dear Colleagues,

TCAD simulations have enabled extensive achievements in silicon-based semiconductor development. The rapid evolution of semiconductor technology has already seen carrier behaviors in integrated devices discussed within the quantum field. Moreover, numerous materials have been proposed to supplement the function of silicon in electronic devices. These developments mark progress in overcoming the challenges in TCAD simulations due to complex quantum effects and out-of-order systems.

The present Special Issue of Nanomaterials, entitled “Simulation Study of Nanoelectronics”, aims to present contemporary state-of-the-art methods for solving problems in the quantum transport simulation domain, such as establishing tight-binding models, introducing scattering, simulating out-of-order systems, and performing other relevant tasks. Based on these methods, we are also seeking to publish interesting simulation results on semiconductor materials that are also promising candidates for electronic applications in the future, such as two-dimensional materials, silicon carbide, and metal oxide semiconductors. We hope this Special Issue will advance our understanding of the complex physical behaviors of electrons in nanoscale materials and device structures.

Dr. Yawei Lv
Guest Editor

Manuscript Submission Information

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• simulation
• semiconductors
• quantum transport
• electronic devices
• TCAD