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CMOS Smart Temperature Sensors
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CMOS Smart Temperature Sensors

A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Physical Sensors".

Deadline for manuscript submissions: closed (30 May 2019) | Viewed by 18569

Special Issue Editors

Dr. Marisa Lopez-Vallejo

E-Mail Website
Guest Editor
Departamento de Ingeniería Electrónica, Universidad Politécnica de Madrid, Avenida Complutense 30, 28040 Madrid, Spain
Interests: reliability-aware electronics; ultra-low power circuits and systems; VLSI design; radiation hardening; computer architecture; emerging technologies and memories
Dr. Pablo Ituero

E-Mail Website
Guest Editor
Department of Electronic Engineering, Universidad Politécnica de Madrid, 28040 Madrid, Spain
Interests: process voltage; temperature sensing and optimization
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Temperature is a first class design concern in modern integrated circuits. The important increase in power densities associated to recent technology evolutions has led to the apparition of thermal gradients and hot spots during run time operation. Temperature impacts several circuit parameters such as speed, cooling budgets, reliability, power consumption, etc. All these effects result in a general worsening of the circuit reliability and wear out. In this context, the field of on-chip temperature monitoring has drawn the attention of the scientific community in the recent years and is the object of study of this special issue.

There is also a growing interest in using smart temperature sensors in hard-constrained applications. This is the case of biomedical devices, Internet of Things (IoT) nodes or wearables, that require temperature monitoring with reduced area and power consumption.

The aim of this Special Issue is to collect papers from academic and industrial players with original, previously unpublished research about new trends and solutions in the field of CMOS smart temperature sensor.

Papers are solicited in, though not limited to, the following areas: smart temperature sensors, interconnection of sensors, placement and allocation automation, thermal simulation, thermal characterization and test.

Dr. Marisa Lopez-Vallejo
Dr. Pablo Ituero
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Sensors is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Temperature sensors
  • Power dissipation
  • Thermal management
  • Silicon
  • Intelligent sensors
  • Energy consumption
  • CMOS process
  • Very large scale integration
  • Monitoring
  • Temperature measurement
  • Calibration
  • Readout circuitry
  • Interface

Published Papers (3 papers)

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Research

15 pages, 546 KiB  
Article
Intrinsic Physical Unclonable Function (PUF) Sensors in Commodity Devices
by Shuai Chen, Bing Li and Yuan Cao
Sensors 2019, 19(11), 2428; https://doi.org/10.3390/s19112428 - 28 May 2019
Cited by 19 | Viewed by 6007
Abstract
The environment-dependent feature of physical unclonable functions (PUFs) is capable of sensing environment changes. This paper presents an analysis and categorization of a variety of PUF sensors. Prior works have demonstrated that PUFs can be used as sensors while providing a security authentication [...] Read more.
The environment-dependent feature of physical unclonable functions (PUFs) is capable of sensing environment changes. This paper presents an analysis and categorization of a variety of PUF sensors. Prior works have demonstrated that PUFs can be used as sensors while providing a security authentication assurance. However, most of the PUF sensors need a dedicated circuit. It can be difficult to implemented in commercial off-the-shelf devices. This paper focuses on the intrinsic Dynamic Random Access Memory (DRAM) PUF-based sensors, which requires no modifications for hardware. The preliminary experimental results on Raspberry Pi have demonstrated the feasibility of our design. Furthermore, we configured the DRAM PUF-based sensor in a DRAM PUF-based key generation scheme which improves the practicability of the design. Full article
(This article belongs to the Special Issue CMOS Smart Temperature Sensors)
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12 pages, 8899 KiB  
Article
A High-Precision CMOS Temperature Sensor with Thermistor Linear Calibration in the (−5 °C, 120 °C) Temperature Range
by Chua-Chin Wang, Zong-You Hou and Jhih-Cheng You
Sensors 2018, 18(7), 2165; https://doi.org/10.3390/s18072165 - 05 Jul 2018
Cited by 10 | Viewed by 5724
Abstract
A high-precision Complementary Metal-Oxide-Semiconductor (CMOS) temperature sensor for (−5 °C, 120 °C) temperature range is designed and analyzed in this investigation. The proposed design is featured with a temperature range selection circuit so that the thermistor linear circuit automatically switches to a corresponding [...] Read more.
A high-precision Complementary Metal-Oxide-Semiconductor (CMOS) temperature sensor for (−5 °C, 120 °C) temperature range is designed and analyzed in this investigation. The proposed design is featured with a temperature range selection circuit so that the thermistor linear circuit automatically switches to a corresponding calibration loop in light of the temperature range besides the analysis of the calibration method. It resolves the problem that the temperature range of a single thermistor temperature sensor is too small. Notably, the output of the proposed design also attains a high linearity. The measurement results in a thermal chamber justifying that the output voltage is 1.96 V to 4.15 V, the maximum linearity error ≤1.4%, and the worst temperature error ≤1.1 °C in the temperature range of −5 °C to 120 °C. Full article
(This article belongs to the Special Issue CMOS Smart Temperature Sensors)
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14 pages, 3400 KiB  
Article
Study of CMOS-SOI Integrated Temperature Sensing Circuits for On-Chip Temperature Monitoring
by Maria Malits, Igor Brouk and Yael Nemirovsky
Sensors 2018, 18(5), 1629; https://doi.org/10.3390/s18051629 - 19 May 2018
Cited by 14 | Viewed by 6131
Abstract
This paper investigates the concepts, performance and limitations of temperature sensing circuits realized in complementary metal-oxide-semiconductor (CMOS) silicon on insulator (SOI) technology. It is shown that the MOSFET threshold voltage (Vt) can be used to accurately measure the chip local [...] Read more.
This paper investigates the concepts, performance and limitations of temperature sensing circuits realized in complementary metal-oxide-semiconductor (CMOS) silicon on insulator (SOI) technology. It is shown that the MOSFET threshold voltage (Vt) can be used to accurately measure the chip local temperature by using a Vt extractor circuit. Furthermore, the circuit’s performance is compared to standard circuits used to generate an accurate output current or voltage proportional to the absolute temperature, i.e., proportional-to-absolute temperature (PTAT), in terms of linearity, sensitivity, power consumption, speed, accuracy and calibration needs. It is shown that the Vt extractor circuit is a better solution to determine the temperature of low power, analog and mixed-signal designs due to its accuracy, low power consumption and no need for calibration. The circuit has been designed using 1 µm partially depleted (PD) CMOS-SOI technology, and demonstrates a measurement inaccuracy of ±1.5 K across 300 K–500 K temperature range while consuming only 30 µW during operation. Full article
(This article belongs to the Special Issue CMOS Smart Temperature Sensors)
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