Dielectric, Ferroelectric and Piezoelectric Properties of Nanomaterials

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: 20 November 2024 | Viewed by 1680

Special Issue Editor


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Guest Editor
School of Chemistry and Chemical Engineering, Qilu University of Technology, Jinan 250353, China
Interests: electronic thin film materials (dielectric, ferroelectric/piezoelectric, multiferroic, etc.) and high performance coatings
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Special Issue Information

Dear Colleagues,

With the fast-paced development of ferroelectric nanomaterials, the downscaling of their electrophysical properties, including their polarization-centered ferroelectric property and polarization-derived dielectric and piezoelectric properties, has become a critical issue when considering their applications in miniaturized and integrated devices. This is primarily due to the fact that ferroelectricity is a long-range polar order, which can be undermined or even totally lost under the size reduction constraints imposed by the microelectronics industry.

The aim of this Special Issue is to explore the aforementioned electrophysical properties in ferroelectric thin films/multilayers/superlattices, nanorods/nanowires/nanotubes/nanofibers, and nanoparticles. We welcome all research works that focus on these properties in ferroelectric nanomaterials, including but not limited to the following:

  • Those reporting the downscaling status quo in ferroelectric nanomaterials (how do their properties compare with the bulk ones?) and analyzing the impacting factors;
  • Those that model/simulate the critical size for a scalable electrophysical property, or the property itself in a nanomaterial or a miniaturized device;
  • Those that present a novel method or create a novel microstructure to address/mitigate downscaling issues, or to endow ferroelectric nanomaterials with excellent or tailor-made electrophysical properties;
  • Those that design, characterize, or fabricate ferroelectric nanomaterials or prototype devices targeting the aforementioned properties or property-related applications, etc.

Lastly, antiferro-electric nanomaterials and their related properties are also within the scope of this Special Issue, as they can transform into a ferroelectric phase under the application of an external electric field.

Prof. Dr. Jun Ouyang
Guest Editor

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Keywords

  • dielectric property
  • ferroelectric property
  • piezoelectric property
  • ferroelectric nanomaterials
  • antiferroelectric nanomaterials
  • downscaling
  • microelectronics
  • thin films
  • multilayers
  • superlattices
  • nanorods
  • nanowires
  • nanotubes
  • nanofibers
  • nanoparticles

Published Papers (2 papers)

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Research

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11 pages, 3684 KiB  
Article
Distinguishing the Charge Trapping Centers in CaF2-Based 2D Material MOSFETs
by Zhe Zhao, Tao Xiong, Jian Gong and Yue-Yang Liu
Nanomaterials 2024, 14(12), 1038; https://doi.org/10.3390/nano14121038 - 16 Jun 2024
Viewed by 610
Abstract
Crystalline calcium fluoride (CaF2) is drawing significant attention due to its great potential of being the gate dielectric of two-dimensional (2D) material MOSFETs. It is deemed to be superior to boron nitride and traditional silicon dioxide (SiO2) because of [...] Read more.
Crystalline calcium fluoride (CaF2) is drawing significant attention due to its great potential of being the gate dielectric of two-dimensional (2D) material MOSFETs. It is deemed to be superior to boron nitride and traditional silicon dioxide (SiO2) because of its larger dielectric constant, wider band gap, and lower defect density. Nevertheless, the CaF2-based MOSFETs fabricated in the experiment still present notable reliability issues, and the underlying reason remains unclear. Here, we studied the various intrinsic defects and adsorbates in CaF2/molybdenum disulfide (MoS2) and CaF2/molybdenum disilicon tetranitride (MoSi2N4) interface systems to reveal the most active charge-trapping centers in CaF2-based 2D material MOSFETs. An elaborate Table comparing the importance of different defects in both n-type and p-type devices is provided. Most impressively, the oxygen molecules (O2) adsorbed at the interface or surface, which are inevitable in experiments, are as active as the intrinsic defects in channel materials, and they can even change the MoSi2N4 to p-type spontaneously. These results mean that it is necessary to develop a high-vacuum packaging process, as well as prepare high-quality 2D materials for better device performance. Full article
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Review

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20 pages, 5344 KiB  
Review
Perspectives of Ferroelectric Wurtzite AlScN: Material Characteristics, Preparation, and Applications in Advanced Memory Devices
by Haiming Qin, Nan He, Cong Han, Miaocheng Zhang, Yu Wang, Rui Hu, Jiawen Wu, Weijing Shao, Mohamed Saadi, Hao Zhang, Youde Hu, Yi Liu, Xinpeng Wang and Yi Tong
Nanomaterials 2024, 14(11), 986; https://doi.org/10.3390/nano14110986 - 6 Jun 2024
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Abstract
Ferroelectric, phase-change, and magnetic materials are considered promising candidates for advanced memory devices. Under the development dilemma of traditional silicon-based memory devices, ferroelectric materials stand out due to their unique polarization properties and diverse manufacturing techniques. On the occasion of the 100th anniversary [...] Read more.
Ferroelectric, phase-change, and magnetic materials are considered promising candidates for advanced memory devices. Under the development dilemma of traditional silicon-based memory devices, ferroelectric materials stand out due to their unique polarization properties and diverse manufacturing techniques. On the occasion of the 100th anniversary of the birth of ferroelectricity, scandium-doped aluminum nitride, which is a different wurtzite structure, was reported to be ferroelectric with a larger coercive, remanent polarization, curie temperature, and a more stable ferroelectric phase. The inherent advantages have attracted widespread attention, promising better performance when used as data storage materials and better meeting the needs of the development of the information age. In this paper, we start from the characteristics and development history of ferroelectric materials, mainly focusing on the characteristics, preparation, and applications in memory devices of ferroelectric wurtzite AlScN. It compares and analyzes the unique advantages of AlScN-based memory devices, aiming to lay a theoretical foundation for the development of advanced memory devices in the future. Full article
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