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Nanomaterials
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Dielectric, Ferroelectric and Piezoelectric Properties of Nanomaterials
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Dielectric, Ferroelectric and Piezoelectric Properties of Nanomaterials

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: 30 June 2025 | Viewed by 5680

Special Issue Editor

Prof. Dr. Jun Ouyang

E-Mail Website1 Website2
Guest Editor
School of Chemistry and Chemical Engineering, Qilu University of Technology, Jinan 250353, China
Interests: electronic thin film materials (dielectric, ferroelectric/piezoelectric, multiferroic, etc.) and high performance coatings
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

With the fast-paced development of ferroelectric nanomaterials, the downscaling of their electrophysical properties, including their polarization-centered ferroelectric property and polarization-derived dielectric and piezoelectric properties, has become a critical issue when considering their applications in miniaturized and integrated devices. This is primarily due to the fact that ferroelectricity is a long-range polar order, which can be undermined or even totally lost under the size reduction constraints imposed by the microelectronics industry.

The aim of this Special Issue is to explore the aforementioned electrophysical properties in ferroelectric thin films/multilayers/superlattices, nanorods/nanowires/nanotubes/nanofibers, and nanoparticles. We welcome all research works that focus on these properties in ferroelectric nanomaterials, including but not limited to the following:

  • Those reporting the downscaling status quo in ferroelectric nanomaterials (how do their properties compare with the bulk ones?) and analyzing the impacting factors;
  • Those that model/simulate the critical size for a scalable electrophysical property, or the property itself in a nanomaterial or a miniaturized device;
  • Those that present a novel method or create a novel microstructure to address/mitigate downscaling issues, or to endow ferroelectric nanomaterials with excellent or tailor-made electrophysical properties;
  • Those that design, characterize, or fabricate ferroelectric nanomaterials or prototype devices targeting the aforementioned properties or property-related applications, etc.

Lastly, antiferro-electric nanomaterials and their related properties are also within the scope of this Special Issue, as they can transform into a ferroelectric phase under the application of an external electric field.

Prof. Dr. Jun Ouyang
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • dielectric property
  • ferroelectric property
  • piezoelectric property
  • ferroelectric nanomaterials
  • antiferroelectric nanomaterials
  • downscaling
  • microelectronics
  • thin films
  • multilayers
  • superlattices
  • nanorods
  • nanowires
  • nanotubes
  • nanofibers
  • nanoparticles

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Published Papers (4 papers)

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Research

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15 pages, 10133 KiB  
Article
Enhanced Energy Storage Performance in La-Doped CaBi4Ti4O15 Films Through the Formation of a Weakly Coupled Relaxor
by Quanlong Liu, Lei Zhang, Jun Ouyang, Yan Liu, Zhehong Tang, Jieyu Chen, Fei Guo and Yunpeng Zhou
Nanomaterials 2024, 14(24), 1998; https://doi.org/10.3390/nano14241998 - 13 Dec 2024
Viewed by 381
Abstract
Relaxor ferroelectric film capacitors exhibit high power density with ultra-fast charge and discharge rates, making them highly advantageous for consumer electronics and advanced pulse power supplies. The Aurivillius-phase bismuth layered ferroelectric films can effectively achieve a high breakdown electric field due to their [...] Read more.
Relaxor ferroelectric film capacitors exhibit high power density with ultra-fast charge and discharge rates, making them highly advantageous for consumer electronics and advanced pulse power supplies. The Aurivillius-phase bismuth layered ferroelectric films can effectively achieve a high breakdown electric field due to their unique insulating layer ((Bi2O2)2+ layer)). However, designing and fabricating Aurivillius-phase bismuth layer relaxor ferroelectric films with optimal energy storage characteristics is challenging due to their inherently stable ferroelectric properties. In this work, lead-free CaBi4-xLaxTi4O15 films were synthesized using the sol–gel technique and a weakly coupled relaxor design. On one hand, the introduction of La3+ ions weaken the dipole–dipole interactions, thereby enhancing the relaxor behavior. Alternatively, the expansion of grain size is restricted to enhance the number of grain boundaries, which possess improved insulating properties. This leads to a higher breakdown electric field. The results indicate that CaBi4-xLaxTi4O15 (x = 1.0) films exhibit excellent recoverable energy storage density (70 J/cm3) and high energy efficiency (73%). Moreover, the film exhibited good temperature stability and frequency stability. This study not only identifies a promising material for dielectric film capacitors but also demonstrates that the energy storage capabilities of Aurivillius-phase bismuth layer ferroelectric films can be effectively modulated through a design incorporating weakly coupled relaxor characteristics. Full article
(This article belongs to the Special Issue Dielectric, Ferroelectric and Piezoelectric Properties of Nanomaterials)
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9 pages, 2943 KiB  
Article
Low-Temperature Fabrication of BiFeO3 Films on Aluminum Foils under a N2-Rich Atmosphere
by Jing Yan
Nanomaterials 2024, 14(16), 1343; https://doi.org/10.3390/nano14161343 - 14 Aug 2024
Viewed by 803
Abstract
To be CMOS-compatible, a low preparation temperature (<500 °C) for ferroelectric films is required. In this study, BiFeO3 films were successfully fabricated at a low annealing temperature (<450 °C) on aluminum foils by a metal–organic decomposition process. The effect of the annealing [...] Read more.
To be CMOS-compatible, a low preparation temperature (<500 °C) for ferroelectric films is required. In this study, BiFeO3 films were successfully fabricated at a low annealing temperature (<450 °C) on aluminum foils by a metal–organic decomposition process. The effect of the annealing atmosphere on the performance of BiFeO3 films was assessed at 440 ± 5 °C. By using a N2-rich atmosphere, a large remnant polarization (Pr~78.1 μC/cm2 @ 1165.2 kV/cm), and a high rectangularity (~91.3% @ 1165.2 kV/cm) of the P-E loop, excellent charge-retaining ability of up to 1.0 × 103 s and outstanding fatigue resistance after 1.0 × 109 switching cycles could be observed. By adopting a N2-rich atmosphere and aluminum foil substrates, acceptable electrical properties (Pr~70 μC/cm2 @ 1118.1 kV/cm) of the BiFeO3 films were achieved at the very low annealing temperature of 365 ± 5 °C. These results offer a new approach for lowering the annealing temperature for integrated ferroelectrics in high-density FeRAM applications. Full article
(This article belongs to the Special Issue Dielectric, Ferroelectric and Piezoelectric Properties of Nanomaterials)
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11 pages, 3684 KiB  
Article
Distinguishing the Charge Trapping Centers in CaF2-Based 2D Material MOSFETs
by Zhe Zhao, Tao Xiong, Jian Gong and Yue-Yang Liu
Nanomaterials 2024, 14(12), 1038; https://doi.org/10.3390/nano14121038 - 16 Jun 2024
Viewed by 1306
Abstract
Crystalline calcium fluoride (CaF2) is drawing significant attention due to its great potential of being the gate dielectric of two-dimensional (2D) material MOSFETs. It is deemed to be superior to boron nitride and traditional silicon dioxide (SiO2) because of [...] Read more.
Crystalline calcium fluoride (CaF2) is drawing significant attention due to its great potential of being the gate dielectric of two-dimensional (2D) material MOSFETs. It is deemed to be superior to boron nitride and traditional silicon dioxide (SiO2) because of its larger dielectric constant, wider band gap, and lower defect density. Nevertheless, the CaF2-based MOSFETs fabricated in the experiment still present notable reliability issues, and the underlying reason remains unclear. Here, we studied the various intrinsic defects and adsorbates in CaF2/molybdenum disulfide (MoS2) and CaF2/molybdenum disilicon tetranitride (MoSi2N4) interface systems to reveal the most active charge-trapping centers in CaF2-based 2D material MOSFETs. An elaborate Table comparing the importance of different defects in both n-type and p-type devices is provided. Most impressively, the oxygen molecules (O2) adsorbed at the interface or surface, which are inevitable in experiments, are as active as the intrinsic defects in channel materials, and they can even change the MoSi2N4 to p-type spontaneously. These results mean that it is necessary to develop a high-vacuum packaging process, as well as prepare high-quality 2D materials for better device performance. Full article
(This article belongs to the Special Issue Dielectric, Ferroelectric and Piezoelectric Properties of Nanomaterials)
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Review

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20 pages, 5344 KiB  
Review
Perspectives of Ferroelectric Wurtzite AlScN: Material Characteristics, Preparation, and Applications in Advanced Memory Devices
by Haiming Qin, Nan He, Cong Han, Miaocheng Zhang, Yu Wang, Rui Hu, Jiawen Wu, Weijing Shao, Mohamed Saadi, Hao Zhang, Youde Hu, Yi Liu, Xinpeng Wang and Yi Tong
Nanomaterials 2024, 14(11), 986; https://doi.org/10.3390/nano14110986 - 6 Jun 2024
Cited by 1 | Viewed by 2653
Abstract
Ferroelectric, phase-change, and magnetic materials are considered promising candidates for advanced memory devices. Under the development dilemma of traditional silicon-based memory devices, ferroelectric materials stand out due to their unique polarization properties and diverse manufacturing techniques. On the occasion of the 100th anniversary [...] Read more.
Ferroelectric, phase-change, and magnetic materials are considered promising candidates for advanced memory devices. Under the development dilemma of traditional silicon-based memory devices, ferroelectric materials stand out due to their unique polarization properties and diverse manufacturing techniques. On the occasion of the 100th anniversary of the birth of ferroelectricity, scandium-doped aluminum nitride, which is a different wurtzite structure, was reported to be ferroelectric with a larger coercive, remanent polarization, curie temperature, and a more stable ferroelectric phase. The inherent advantages have attracted widespread attention, promising better performance when used as data storage materials and better meeting the needs of the development of the information age. In this paper, we start from the characteristics and development history of ferroelectric materials, mainly focusing on the characteristics, preparation, and applications in memory devices of ferroelectric wurtzite AlScN. It compares and analyzes the unique advantages of AlScN-based memory devices, aiming to lay a theoretical foundation for the development of advanced memory devices in the future. Full article
(This article belongs to the Special Issue Dielectric, Ferroelectric and Piezoelectric Properties of Nanomaterials)
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