InAsSb-Based Infrared Photodetectors: Thirty Years Later On

Rogalski, Antoni; Martyniuk, Piotr; Kopytko, Malgorzata; Madejczyk, Pawel; Krishna, Sanjay

doi:10.3390/s20247047

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InAsSb-Based Infrared Photodetectors: Thirty Years Later On

by

Antoni Rogalski

¹,

Piotr Martyniuk

^1,*,

Malgorzata Kopytko

¹,

Pawel Madejczyk

¹ and

Sanjay Krishna

²

¹

Institute of Applied Physics, Military University of Technology, 00-908 Warsaw, Poland

²

Department of Electrical Engineering, The Ohio State University, Columbus, OH 43210-1210, USA

^*

Author to whom correspondence should be addressed.

Sensors 2020, 20(24), 7047; https://doi.org/10.3390/s20247047

Submission received: 24 September 2020 / Revised: 4 November 2020 / Accepted: 9 November 2020 / Published: 9 December 2020

(This article belongs to the Section Optical Sensors)

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Abstract

In 1989, one author of this paper (A.R.) published the very first review paper on InAsSb infrared detectors. During the last thirty years, many scientific breakthroughs and technological advances for InAsSb-based photodetectors have been made. Progress in advanced epitaxial methods contributed considerably to the InAsSb improvement. Current efforts are directed towards the photodetector’s cut-off wavelength extension beyond lattice-available and lattice-strained binary substrates. It is suspected that further improvement of metamorphic buffers for epitaxial layers will lead to lower-cost InAsSb-based focal plane arrays on large-area alternative substrates like GaAs and silicon. Most photodetector reports in the last decade are devoted to the heterostructure and barrier architectures operating in high operating temperature conditions. In the paper, at first InAsSb growth methods are briefly described. Next, the fundamental material properties are reviewed, stressing electrical and optical aspects limiting the photodetector performance. The last part of the paper highlights new ideas in design of InAsSb-based bulk and superlattice infrared detectors and focal plane arrays. Their performance is compared with the state-of-the-art infrared detector technologies.

Keywords: infrared detectors; InAsSb; superlattice; higher operating temperature

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MDPI and ACS Style

Rogalski, A.; Martyniuk, P.; Kopytko, M.; Madejczyk, P.; Krishna, S. InAsSb-Based Infrared Photodetectors: Thirty Years Later On. Sensors 2020, 20, 7047. https://doi.org/10.3390/s20247047

AMA Style

Rogalski A, Martyniuk P, Kopytko M, Madejczyk P, Krishna S. InAsSb-Based Infrared Photodetectors: Thirty Years Later On. Sensors. 2020; 20(24):7047. https://doi.org/10.3390/s20247047

Chicago/Turabian Style

Rogalski, Antoni, Piotr Martyniuk, Malgorzata Kopytko, Pawel Madejczyk, and Sanjay Krishna. 2020. "InAsSb-Based Infrared Photodetectors: Thirty Years Later On" Sensors 20, no. 24: 7047. https://doi.org/10.3390/s20247047

APA Style

Rogalski, A., Martyniuk, P., Kopytko, M., Madejczyk, P., & Krishna, S. (2020). InAsSb-Based Infrared Photodetectors: Thirty Years Later On. Sensors, 20(24), 7047. https://doi.org/10.3390/s20247047

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InAsSb-Based Infrared Photodetectors: Thirty Years Later On

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