Next Article in Journal
Robust Localization for Robot and IoT Using RSSI
Next Article in Special Issue
Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review
Previous Article in Journal
In Situ Measurements of Energy Consumption and Indoor Environmental Quality of a Pre-Retrofitted Student Dormitory in Athens
Previous Article in Special Issue
Case Study about the Energy Absorption Capacity of Metal Oxide Varistors with Thermal Coupling
 
 
Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
Journals
Energies
Volume 12
Issue 11
10.3390/en12112211
energies-logo
Submit to this Journal Review for this Journal Propose a Special Issue
► Article Menu

Article Menu

share Share announcement Help format_quote Cite question_answer Discuss in SciProfiles
first_page
settings
Order Article Reprints
Font Type:
Arial Georgia Verdana
Font Size:
Aa Aa Aa
Line Spacing:
Column Width:
Background:
Article

Self-Sustained Turn-Off Oscillation of SiC MOSFETs: Origin, Instability Analysis, and Prevention

by
Peng Xue
*,
Luca Maresca
,
Michele Riccio
,
Giovanni Breglio
and
Andrea Irace
Department of Electrical Engineering and Information Technologies, University of Naples Federico II, 80125 Naples, Italy
*
Author to whom correspondence should be addressed.
Energies 2019, 12(11), 2211; https://doi.org/10.3390/en12112211
Submission received: 30 March 2019 / Revised: 30 April 2019 / Accepted: 21 May 2019 / Published: 11 June 2019
(This article belongs to the Special Issue Volume II: Semiconductor Power Devices)
Browse Figures
Versions Notes

Abstract

This paper presents a comprehensive investigation on the self-sustained oscillation of silicon carbide (SiC) MOSFETs. At first, based on the double pulse switching test, it is identified that the self-sustained oscillation of SiC MOSFETs can be triggered by two distinct test conditions. To investigate the oscillatory criteria of the two types of self-sustained oscillation, a small-signal ac model is introduced to obtain the transfer function of the oscillatory system. The instability of the oscillation is thereby determined by the two conjugate pole pairs of the transfer function. By analyzing the damping ratios of the two pole pairs, the parametric sensitivity of various circuit and device’s parameters on the two types of self-sustained oscillation are obtained. The analyses reveal the oscillatory criteria of the self-sustained oscillation for SiC MOSFETs. Based on the oscillatory criteria, necessary methods are proposed to prevent the oscillation. The proposed oscillation suppression methods are validated by the experiment at the end of the paper.
Keywords: SiC MOSFET; turn-off oscillation; small-signal model; self-sustained oscillation; instability SiC MOSFET; turn-off oscillation; small-signal model; self-sustained oscillation; instability

Share and Cite

MDPI and ACS Style

Xue, P.; Maresca, L.; Riccio, M.; Breglio, G.; Irace, A. Self-Sustained Turn-Off Oscillation of SiC MOSFETs: Origin, Instability Analysis, and Prevention. Energies 2019, 12, 2211. https://doi.org/10.3390/en12112211

AMA Style

Xue P, Maresca L, Riccio M, Breglio G, Irace A. Self-Sustained Turn-Off Oscillation of SiC MOSFETs: Origin, Instability Analysis, and Prevention. Energies. 2019; 12(11):2211. https://doi.org/10.3390/en12112211

Chicago/Turabian Style

Xue, Peng, Luca Maresca, Michele Riccio, Giovanni Breglio, and Andrea Irace. 2019. "Self-Sustained Turn-Off Oscillation of SiC MOSFETs: Origin, Instability Analysis, and Prevention" Energies 12, no. 11: 2211. https://doi.org/10.3390/en12112211

APA Style

Xue, P., Maresca, L., Riccio, M., Breglio, G., & Irace, A. (2019). Self-Sustained Turn-Off Oscillation of SiC MOSFETs: Origin, Instability Analysis, and Prevention. Energies, 12(11), 2211. https://doi.org/10.3390/en12112211

Note that from the first issue of 2016, this journal uses article numbers instead of page numbers. See further details here.

Article Metrics

Back to TopTop