Volume II: Semiconductor Power Devices

Guest Editorial Board:

• Marina Antoniou, University of Cambridge, UK
• Chih-Fang Huang, National Tsing Hua University, Taiwan
• Ferdinando Iucolano, ST Microelectronics, Italy
• Pete Losee, UnitedSiC, USA
• Andrei Mihaila, ABB, Switzerland
• Takafumi Okuda, Kyoto University, Japan
• Martin Pfost, TU Dortmund, Germany
• Michele Riccio, University of Naples “Federico II”, Italy
• Frederic Richardeau, CNRS, University of Toulouse, France
• Akio Shima, Hitachi, Japan
• Kenichiro Tanaka, Panasonic, Japan

Dear Colleagues,

Wide-band-gap (WBG) semiconductors enable a radical change in the optimization trade-offs typical of power device design. For instance, fully-drift-current-based high voltage (>600 V) components with good on-state performance and excellent switching capability are feasible and have been amply demonstrated. Bipolar solutions, on the other hand, enable achievement of unprecedented ultra-high voltage ratings (>10 kV), opening up radically new system level development options; a number of research samples have been presented over the past few years, too. In addition, WBG technology offers high temperature operation capability, and, with it, the potential for disruptive progress beyond state-of-the-art in the volumetric and gravimetric power density that can be realistically targeted in the development of power conversion systems.

Over the past few years, the technology has transitioned from a research exercise to a commercial reality in the instance of silicon carbide (SiC) and gallium nitride (GaN), while other materials have further developed (e.g., diamond, C) or have been newly introduced (gallium oxide, Ga₂O₃). While it is yet not fully clear where WBG will replace silicon (Si) and where they will co-exist, some application domains pivotal of societal infrastructure are by now acknowledged as strategically relevant for its large market deployment. At the same time, a number of aspects still require dedicated attention, including the development of bespoke packaging solutions, reliability enhancement and lifetime assessment and validation methodologies.

This Special Issue aims to gather contributions defining the state-of-the-art in WBG power device design, fabrication technology, packaging and thermal management, application and reliability validation: Original contributions and review papers alike are solicited in all relevant areas.

Dr. Alberto Castellazzi
Dr. Andrea Irace
Guest Editors

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