Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping
Abstract
:1. Introduction
2. Experimental Section
2.1. Experimental Setup
2.2. Design of Experiments and Performance Characterization
3. Results and Discussion
3.1. Effect of Ultrasonic on the Chemical Corrosion of Single Crystal SiC
3.2. Effect of Ultrasonic on the CMP Performance of Single Crystal SiC
4. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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Corroding | CMP |
---|---|
Conventional corroding After conventional lapping (C-c’) | Conventional CMP After conventional lapping (C-c) |
Ultrasonic corroding After conventional lapping (C-u’) | Ultrasonic CMP After conventional lapping (C-u) |
Conventional corroding After ultrasonic lapping (U-c’) | Conventional CMP After ultrasonic lapping (U-c) |
Ultrasonic corroding After ultrasonic lapping (U-u’) | Ultrasonic CMP After ultrasonic lapping (U-u) |
Category | Parameters |
---|---|
Specimen | 6H-SiC wafer: 2 inch × (440 ± 25) μm (from the Tankeblue semiconductor, Beijing, China) |
Mechanical action | Abrasive: diamond (4 μm/4 wt%), Al2O3 (W1.5/6 wt%) Slurry supplying rate: 10 mL/min Lapping disc: cast iron (φ500 mm) Revolution speed of disc: 40 rpm Pressure: 20 KPa |
Ultrasonic vibration | Maximum power (Pmax): 2 KW Setting power: 70% × Pmax (f = 19.54 KHz, A = 2 μm) |
Time | 5 min diamond + 5 min Al2O3 |
Category | Parameters |
---|---|
Ultrasonic vibration | Maximum power (Pmax): 2 KW Setting power: 70% × Pmax (f = 19.54 KHz, A = 2 μm) |
Mechanical action | Platen rotation speed: 40 rpm (0.6–1 m/s) Download pressure: 60 KPa Pad: Porous Polyurethane (shenyang kejing, China) |
Slurry | Type: colloidal silica Supplying rate: 25 mL/min Abrasive size/mass fraction: Average 100 nm/20 wt% Oxidant and catalyst: 6 wt% H2O2 and 0.6 wt% alkali KOH |
Time | 1 h |
Experiments | Before (g) | After (g) | Weight Change (g) |
---|---|---|---|
Conventional lapping | 2.8612 | 2.7635 | 0.0977 |
Ultrasonic lapping | 2.7750 | 2.6645 | 0.1105 |
C-c | 2.7640 | 2.7617 | 0.0023 |
C-u | 2.7539 | 2.7492 | 0.0047 |
U-c | 2.6821 | 2.6783 | 0.0038 |
U-u | 2.7645 | 2.7575 | 0.0070 |
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Hu, Y.; Shi, D.; Hu, Y.; Zhao, H.; Sun, X. Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping. Materials 2018, 11, 2022. https://doi.org/10.3390/ma11102022
Hu Y, Shi D, Hu Y, Zhao H, Sun X. Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping. Materials. 2018; 11(10):2022. https://doi.org/10.3390/ma11102022
Chicago/Turabian StyleHu, Yong, Dong Shi, Ye Hu, Hongwei Zhao, and Xingdong Sun. 2018. "Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping" Materials 11, no. 10: 2022. https://doi.org/10.3390/ma11102022