Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses
Abstract
:1. Introduction
2. Materials and Methods
3. Results and Discussion
3.1. Crystalline-to-Amorphous Phase Transitions
3.2. Influence of Interfaces on Crystallization Process
3.3. Interface-Assisted Phase Transitions from Layered Structures to Non-Layered Structure
3.4. Crystalline-to-Crystalline Phase Transitions via Structural Rearrangements
4. Conclusions
Author Contributions
Funding
Acknowledgments
Conflicts of Interest
References
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Behrens, M.; Lotnyk, A.; Bryja, H.; Gerlach, J.W.; Rauschenbach, B. Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses. Materials 2020, 13, 2082. https://doi.org/10.3390/ma13092082
Behrens M, Lotnyk A, Bryja H, Gerlach JW, Rauschenbach B. Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses. Materials. 2020; 13(9):2082. https://doi.org/10.3390/ma13092082
Chicago/Turabian StyleBehrens, Mario, Andriy Lotnyk, Hagen Bryja, Jürgen W. Gerlach, and Bernd Rauschenbach. 2020. "Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses" Materials 13, no. 9: 2082. https://doi.org/10.3390/ma13092082