Microstructural Origin of the High-Energy Storage Performance in Epitaxial Lead-Free Ba(Zr0.2Ti0.8)O3 Thick Films
Abstract
:1. Introduction
2. Materials and Methods
3. Results
4. Discussions
5. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
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Ouyang, J.; Wang, X.; Shao, C.; Cheng, H.; Zhu, H.; Ren, Y. Microstructural Origin of the High-Energy Storage Performance in Epitaxial Lead-Free Ba(Zr0.2Ti0.8)O3 Thick Films. Materials 2022, 15, 6778. https://doi.org/10.3390/ma15196778
Ouyang J, Wang X, Shao C, Cheng H, Zhu H, Ren Y. Microstructural Origin of the High-Energy Storage Performance in Epitaxial Lead-Free Ba(Zr0.2Ti0.8)O3 Thick Films. Materials. 2022; 15(19):6778. https://doi.org/10.3390/ma15196778
Chicago/Turabian StyleOuyang, Jun, Xianke Wang, Changtao Shao, Hongbo Cheng, Hanfei Zhu, and Yuhang Ren. 2022. "Microstructural Origin of the High-Energy Storage Performance in Epitaxial Lead-Free Ba(Zr0.2Ti0.8)O3 Thick Films" Materials 15, no. 19: 6778. https://doi.org/10.3390/ma15196778
APA StyleOuyang, J., Wang, X., Shao, C., Cheng, H., Zhu, H., & Ren, Y. (2022). Microstructural Origin of the High-Energy Storage Performance in Epitaxial Lead-Free Ba(Zr0.2Ti0.8)O3 Thick Films. Materials, 15(19), 6778. https://doi.org/10.3390/ma15196778