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Journal: Materials, 2022
Volume: 15
Number: 819

Article: Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO2/Si3N4 Dual-Layer Insulator
Authors: by So-Ra Min, Min-Su Cho, Sang-Ho Lee, Jin Park, Hee-Dae An, Geon-Uk Kim, Young-Jun Yoon, Jae-Hwa Seo, Jae-Won Jang, Jin-Hyuk Bae, Sin-Hyung Lee and In-Man Kang
Link: https://www.mdpi.com/1996-1944/15/3/819

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