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Journal: Materials, 2022
Volume: 15
Number: 2402

Article: Quad-Level Cell Switching with Excellent Reliability in TiN/AlOx:Ti/TaOx/TiN Memory Device
Authors: by Hee Ju Shin, Hyun Kyu Seo, Su Yeon Lee, Minsoo Park, Seong-Geon Park and Min Kyu Yang
Link: https://www.mdpi.com/1996-1944/15/7/2402

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