Ahmad, A.; Strak, P.; Kempisty, P.; Sakowski, K.; Piechota, J.; Kangawa, Y.; Grzegory, I.; Leszczynski, M.; Zytkiewicz, Z.R.; Muziol, G.;
et al. Polarization Doping in a GaN-InN System—Ab Initio Simulation. Materials 2023, 16, 1227.
https://doi.org/10.3390/ma16031227
AMA Style
Ahmad A, Strak P, Kempisty P, Sakowski K, Piechota J, Kangawa Y, Grzegory I, Leszczynski M, Zytkiewicz ZR, Muziol G,
et al. Polarization Doping in a GaN-InN System—Ab Initio Simulation. Materials. 2023; 16(3):1227.
https://doi.org/10.3390/ma16031227
Chicago/Turabian Style
Ahmad, Ashfaq, Pawel Strak, Pawel Kempisty, Konrad Sakowski, Jacek Piechota, Yoshihiro Kangawa, Izabella Grzegory, Michal Leszczynski, Zbigniew R. Zytkiewicz, Grzegorz Muziol,
and et al. 2023. "Polarization Doping in a GaN-InN System—Ab Initio Simulation" Materials 16, no. 3: 1227.
https://doi.org/10.3390/ma16031227
APA Style
Ahmad, A., Strak, P., Kempisty, P., Sakowski, K., Piechota, J., Kangawa, Y., Grzegory, I., Leszczynski, M., Zytkiewicz, Z. R., Muziol, G., Monroy, E., Kaminska, A., & Krukowski, S.
(2023). Polarization Doping in a GaN-InN System—Ab Initio Simulation. Materials, 16(3), 1227.
https://doi.org/10.3390/ma16031227