Optimizing Wide Band Gap Cu(In,Ga)Se₂ Solar Cell Performance: Investigating the Impact of “Cliff” and “Spike” Heterostructures

In recent years, the efficiency of high-efficiency Cu(In,Ga)Se₂ (CIGS) solar cells has been significantly improved, particularly for narrow-gap types. One of the key reasons for the enhancement of narrow-gap device performance is the formation of the “Spike” structure at the CdS/CIGS heterojunction interface. Wide-gap CIGS solar cells excel in modular production but lag behind in efficiency compared to narrow-gap cells. Some studies suggest that the “Cliff” structure at the heterojunction of wide-gap CIGS solar cells may be one of the factors contributing to this decreased efficiency. This paper utilizes the SCAPS software, grounded in the theories of semiconductor physics and photovoltaic effects, to conduct an in-depth analysis of the impact of “Cliff” and “Spike” heterojunction structures on the performance of wide band gap CIGS solar cells through numerical simulation methods. The aim is to verify whether the “Spike” structure is also advantageous for enhancing wide-gap CIGS device performance. The simulation results show that the “Spike” structure is beneficial for reducing interfacial recombination, thereby enhancing the V_OC of wide-gap cells. However, an electronic transport barrier may form at the heterojunction interface, resulting in a decrease in J_SC and FF, which subsequently reduces device efficiency. The optimal heterojunction structure should exhibit a reduced “Cliff” degree, which can facilitate the reduction of interfacial recombination while simultaneously preventing the formation of an electronic barrier, ultimately enhancing both V_OC and device performance.