(Ultra)Wide-Bandgap Semiconductors for Extreme Environment Applications
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".
Deadline for manuscript submissions: 31 May 2025 | Viewed by 852
Special Issue Editors
Interests: wide bandgap semiconductor; gallium nitride semiconductor; gallium oxide semiconductor; irradiation power electronics; extreme environment applications
Interests: GaN power device; beta-Ga2O3 power device; ferroelectric FETs; neuron device
Interests: wide bandgap semiconductor; power semiconductor; radiation mechanism; high temperature applications; extreme environment applications
Special Issue Information
Dear Colleagues,
Wide-bandgap and ultrawide-bandgap semiconductors (e.g., SiC, GaN, Ga2O3, and diamond) have notable potential for applications in extreme environments, such as space radiation, weapons nuclear explosions, and ultra-high temperatures. Ultrawide-bandgap electronics operating in extreme environments allow for an evident reduction in additional control components and shielding blocks, thereby reducing the size and weight of the power electronics system. However, the current exploration and research results of wide-bandgap devices in extreme environments are relatively scattered, and there is a lack of organization to provide inspiration to the wider community. Therefore, this Special Issue aims to provide a stage and communication venue for the research results of ultrawide-bandgap semiconductor technology for extreme environmental applications.
This Special Issue welcomes, but is not limited to, manuscripts on the following topics:
- Material physics and defects for extreme environments (irradiation, stress, etc.);
- Device structure and process fabrication, e.g., traditional structure and hardened design;
- Circuit design and power applications, e.g., gate drive and switching circuits;
- Electronic system integration and heterostructure heterogeneity;
- Packaging and device modules;
- Numerical simulation and modeling analysis;
- Various extreme-environment applications, such as radiation, high and low temperatures, and extreme stress.
Dr. Feng Zhou
Prof. Dr. Hong Zhou
Dr. Xin Zhou
Guest Editors
Manuscript Submission Information
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Keywords
- wide bandgap semiconductor
- ultra-wide bandgap semiconductor
- gallium nitride
- silicon carbide
- extreme environment applications
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Planned Papers
The below list represents only planned manuscripts. Some of these manuscripts have not been received by the Editorial Office yet. Papers submitted to MDPI journals are subject to peer-review.
Title: Investigation of irradiation characteristics of laser-lifted GaN vertical Schottky barrier diodes
Authors: Wei Qi, Feng Zhou, Teng Ma, Weizong Xu, Dong Zhou, Fangfang Ren, Dunjun Chen, Rong Zhang, Youdou Zheng, and Hai Lu
Affiliation: School of Electronic Science and Engi-neering, Nanjing University, Nanjing 210093, China
