Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (Al2O3) Abrasive
Abstract
:1. Introduction
2. Materials and Methods
3. Results and Discussion
3.1. Orthogonal Design Experiment
3.2. Analysis of Polishing Mechanism
4. Conclusions
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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Items | Value |
---|---|
Wafer | 2-inch 4H-SiC |
Polishing machine | Bruker CP-4 |
Polishing pad | Suba 800 |
Load (psi) | 4 |
Polishing head rotation speed (r/min) | 100 |
Polishing platen speed (r/min) | 90 |
Polishing fluid flow rate (mL/min) | 90 |
Polishing time (min) | 60 |
Test Number | pH Value | Oxidant Content (wt%) | Abrasive Content (wt%) | MRR (μm/h) | Ra (nm) |
---|---|---|---|---|---|
1 | 2 | 1 | 1 | 0.5212 | 0.348 |
2 | 2 | 2 | 3 | 0.7665 | 1.277 |
3 | 2 | 3 | 5 | 0.7972 | 0.365 |
4 | 2 | 4 | 2 | 0.4906 | 0.122 |
5 | 2 | 5 | 4 | 0.6439 | 0.113 |
6 | 3 | 1 | 5 | 0.5519 | 0.248 |
7 | 3 | 2 | 2 | 0.4599 | 0.311 |
8 | 3 | 3 | 4 | 0.7052 | 0.355 |
9 | 3 | 4 | 1 | 0.6439 | 0.123 |
10 | 3 | 5 | 3 | 0.6439 | 1.358 |
11 | 4 | 1 | 4 | 0.4906 | 0.176 |
12 | 4 | 2 | 1 | 0.7052 | 0.809 |
13 | 4 | 3 | 3 | 0.5212 | 1.828 |
14 | 4 | 4 | 5 | 0.7052 | 0.129 |
15 | 4 | 5 | 2 | 0.7358 | 2.468 |
16 | 5 | 1 | 3 | 0.5212 | 0.225 |
17 | 5 | 2 | 5 | 0.7052 | 0.766 |
18 | 5 | 3 | 2 | 0.7052 | 0.408 |
19 | 5 | 4 | 4 | 0.8278 | 0.149 |
20 | 5 | 5 | 1 | 0.7972 | 1.970 |
21 | 6 | 1 | 2 | 0.5825 | 0.268 |
22 | 6 | 2 | 4 | 0.7358 | 0.264 |
23 | 6 | 3 | 1 | 0.6745 | 0.210 |
24 | 6 | 4 | 3 | 0.7665 | 0.110 |
25 | 6 | 5 | 5 | 0.7052 | 0.116 |
Parameter | pH Value | Oxidant Content (wt%) | Abrasive Content (wt%) |
---|---|---|---|
3.2193 | 2.66742 | 3.34194 | |
3.00468 | 3.3726 | 2.97402 | |
3.15798 | 3.40326 | 3.2193 | |
3.55656 | 3.43392 | 3.40326 | |
3.46458 | 3.5259 | 3.46458 | |
0.64386 | 0.533484 | 0.668388 | |
0.60094 | 0.67452 | 0.594804 | |
0.631596 | 0.680652 | 0.64386 | |
0.711312 | 0.686784 | 0.680652 | |
0.692916 | 0.70518 | 0.692916 | |
0.110376 | 0.171696 | 0.097812 |
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Gong, J.; Wang, W.; Liu, W.; Song, Z. Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (Al2O3) Abrasive. Materials 2024, 17, 679. https://doi.org/10.3390/ma17030679
Gong J, Wang W, Liu W, Song Z. Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (Al2O3) Abrasive. Materials. 2024; 17(3):679. https://doi.org/10.3390/ma17030679
Chicago/Turabian StyleGong, Juntao, Weilei Wang, Weili Liu, and Zhitang Song. 2024. "Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (Al2O3) Abrasive" Materials 17, no. 3: 679. https://doi.org/10.3390/ma17030679