Anoldo, L.; Zanetti, E.; Coco, W.; Russo, A.; Fiorenza, P.; Roccaforte, F.
4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses. Materials 2024, 17, 1908.
https://doi.org/10.3390/ma17081908
AMA Style
Anoldo L, Zanetti E, Coco W, Russo A, Fiorenza P, Roccaforte F.
4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses. Materials. 2024; 17(8):1908.
https://doi.org/10.3390/ma17081908
Chicago/Turabian Style
Anoldo, Laura, Edoardo Zanetti, Walter Coco, Alfio Russo, Patrick Fiorenza, and Fabrizio Roccaforte.
2024. "4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses" Materials 17, no. 8: 1908.
https://doi.org/10.3390/ma17081908
APA Style
Anoldo, L., Zanetti, E., Coco, W., Russo, A., Fiorenza, P., & Roccaforte, F.
(2024). 4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses. Materials, 17(8), 1908.
https://doi.org/10.3390/ma17081908