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Journal: Micromachines, 2019
Volume: 10
Number: 848

Article: A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure
Authors: by Zhonghao Sun, Huolin Huang, Nan Sun, Pengcheng Tao, Cezhou Zhao and Yung C. Liang
Link: https://www.mdpi.com/2072-666X/10/12/848

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