A Review: Preparation, Performance, and Applications of Silicon Oxynitride Film
Abstract
:1. Introduction
2. Performance of SiNxOy Film
2.1. Luminescent Performance
2.2. Adjustable Refractive Index
3. Preparation of SiNxOy Film
3.1. CVD Method
3.1.1. PECVD
3.1.2. LPCVD
3.1.3. High Temperature Thermochemical Vapor Deposition (HTCVD)
3.1.4. Photochemical Vapor Deposition (Photo-CVD)
3.2. PVD
3.3. Oxynitridation
4. Applications of SiNxOy Film
4.1. Application of Barrier Material
4.2. Application of Non-Volatile Semiconducting Memory
4.3. Application of Optical Devices
4.4. Application of Anti-Scratch Coating
5. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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Deposition Method | Precursor Gases | Ratio of Precursor Gases | Deposition Condition | Reference |
---|---|---|---|---|
PECVD | SiH4, N2O | SiH4/N2O = 0.05–0.125 | 200 °C, 97.09 Pa | [82] |
RF-PECVD | SiH4, N2O, NH3 | (NH3 + SiH4)/N2O = 0.64–3.22 | 120 Pa | [76] |
ECR-PECVD | N2, O2, SiH4 | O2/N2 = 0.03–0.1 | - | [83] |
IC-PECVD | N2, Ar, SiH4 | N2/Ar = 0.0625–0.5 | 90–250 °C, 1–6 Pa | [84] |
LPCVD | N2O, NH3 SiH2Cl2 | N2O/NH3 = 4.8- | 860 °C, 53.2 Pa | [85] |
Method | Advantages | Disadvantages |
---|---|---|
PECVD | Flexible operation method, High process repeatability, High step coverage, Low deposition temperature (<400 °C) [92] | High cost, High H content in film |
LPCVD | Uniform film, Complete structure, Less pinhole defects, High deposition speed, Large-area preparation [80] | Low heating rate, Long reaction time, High deposition temperature (generally >550 °C) |
HTCVD | Simple operation and operation, High reaction rate, Low H content in film and dense structure [80] | High deformation, Impaired interface performance |
Photo-CVD | Low reaction temperature (≤250 °C), Smooth film surface, Less by-products [89] | High cost, Low film stability |
Method | Advantages | Disadvantages |
---|---|---|
CVD | High deposition rate Low deposition temperature Uniform film | Hydrogen content has an effect on electrical conductivity [111] |
PVD | Low hydrogen content | Low deposition rate [112] Target poisoning is common |
Oxynitridation | Relatively simple operation, large-scale preparation | Film thickness is difficult to control Toxicity of raw gas [110] Low N2 nitriding degree [113] |
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Shi, Y.; He, L.; Guang, F.; Li, L.; Xin, Z.; Liu, R. A Review: Preparation, Performance, and Applications of Silicon Oxynitride Film. Micromachines 2019, 10, 552. https://doi.org/10.3390/mi10080552
Shi Y, He L, Guang F, Li L, Xin Z, Liu R. A Review: Preparation, Performance, and Applications of Silicon Oxynitride Film. Micromachines. 2019; 10(8):552. https://doi.org/10.3390/mi10080552
Chicago/Turabian StyleShi, Yue, Liang He, Fangcao Guang, Luhai Li, Zhiqing Xin, and Ruping Liu. 2019. "A Review: Preparation, Performance, and Applications of Silicon Oxynitride Film" Micromachines 10, no. 8: 552. https://doi.org/10.3390/mi10080552
APA StyleShi, Y., He, L., Guang, F., Li, L., Xin, Z., & Liu, R. (2019). A Review: Preparation, Performance, and Applications of Silicon Oxynitride Film. Micromachines, 10(8), 552. https://doi.org/10.3390/mi10080552