Sombrio, G.; Oliveira, E.; Strassner, J.; Richter, J.; Doering, C.; Fouckhardt, H.
Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS). Micromachines 2021, 12, 502.
https://doi.org/10.3390/mi12050502
AMA Style
Sombrio G, Oliveira E, Strassner J, Richter J, Doering C, Fouckhardt H.
Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS). Micromachines. 2021; 12(5):502.
https://doi.org/10.3390/mi12050502
Chicago/Turabian Style
Sombrio, Guilherme, Emerson Oliveira, Johannes Strassner, Johannes Richter, Christoph Doering, and Henning Fouckhardt.
2021. "Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS)" Micromachines 12, no. 5: 502.
https://doi.org/10.3390/mi12050502
APA Style
Sombrio, G., Oliveira, E., Strassner, J., Richter, J., Doering, C., & Fouckhardt, H.
(2021). Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS). Micromachines, 12(5), 502.
https://doi.org/10.3390/mi12050502
