The Evolution of Manufacturing Technology for GaN Electronic Devices
, Chun-Hsiung Lin 4,*, Hao-Chung Kuo 1,5,* and Edward Yi Chang 4Round 1
Reviewer 1 Report
In this contribution a comprehensive review of the manufacturing Technology for GaN Electronic Devices has been performed.
The work is quite complete and well-written. It might be interesting for the community.
I suggest to accept the paper.
Just to complete the set of features for GaN HEMT devices, I suggest to mention the optical behavior of GaN devices, as reported in:
- Stein, et al, "UV illumination effects on AlGaN/GaN HEMTs for tunable RF oscillators," 2021 IEEE Radio and Wireless Symposium (RWS), 2021, pp. 168-170, doi: 10.1109/RWS50353.2021.9360392.
Caddemi, A., et al., “Microwave effects of UV light exposure of a GaN HEMT: Measurements and model extraction,” Microelectronics Reliability, Vol. 65, 2016, pp. 310-317, doi: 10.1016/j.microrel.2016.08.020.
Appl. Phys. Lett. 111, 251103 (2017); https://doi.org/10.1063/1.5004024.
However, these are only a few example, the literature is plenty of papers concerning the light exposure effects on GaN HEMTs.
Reviewer 2 Report
The authors present a detailed review on GaN high electron mobility transistors with a specific focus on the evolution of the manufacturing technology. The paper is well written and clear. The references include the main research activities and results obtained in the field. The manuscript is well adapted to the topics addressed in Micromachines Journal and can be published as is.
