You, S.; Lei, Y.; Wang, L.; Chen, X.; Zhou, T.; Wang, Y.; Wang, J.; Liu, T.; Li, X.; Zhao, S.;
et al. 750 V Breakdown in GaN Buffer on 200 mm SOI Substrates Using Reverse-Stepped Superlattice Layers. Micromachines 2024, 15, 1460.
https://doi.org/10.3390/mi15121460
AMA Style
You S, Lei Y, Wang L, Chen X, Zhou T, Wang Y, Wang J, Liu T, Li X, Zhao S,
et al. 750 V Breakdown in GaN Buffer on 200 mm SOI Substrates Using Reverse-Stepped Superlattice Layers. Micromachines. 2024; 15(12):1460.
https://doi.org/10.3390/mi15121460
Chicago/Turabian Style
You, Shuzhen, Yilong Lei, Liang Wang, Xing Chen, Ting Zhou, Yi Wang, Junbo Wang, Tong Liu, Xiangdong Li, Shenglei Zhao,
and et al. 2024. "750 V Breakdown in GaN Buffer on 200 mm SOI Substrates Using Reverse-Stepped Superlattice Layers" Micromachines 15, no. 12: 1460.
https://doi.org/10.3390/mi15121460
APA Style
You, S., Lei, Y., Wang, L., Chen, X., Zhou, T., Wang, Y., Wang, J., Liu, T., Li, X., Zhao, S., Zhang, J., & Hao, Y.
(2024). 750 V Breakdown in GaN Buffer on 200 mm SOI Substrates Using Reverse-Stepped Superlattice Layers. Micromachines, 15(12), 1460.
https://doi.org/10.3390/mi15121460
