Progress in Spin Logic Devices Based on Domain-Wall Motion
Abstract
:1. Introduction
2. Physics and Materials Research for Fast Current-Driven DW Motion
2.1. Spin-Transfer Torque
System | Material | v (m/s) | j ( A/m2) | Year [Ref.] | Adv (+) / Lim (−) | |
---|---|---|---|---|---|---|
Spin-transfer torque (STT) | IP FM PMA FM | NiFe Co/Ni multilayer | 110 40 | 1.5 1.4 | 2007 [47] 2008 [48] | (+) Simple implementation (−) Slow (−) High current density |
Spin-orbit torque (SOT) | PMA FM | Pt+Co Pt+Co/Ni/Co | 400 200 | 3.2 2.5 | 2011 [49] 2013 [50] | (+) Fast (+) Efficient |
Exchange-coupling torque (ECT) | PMA SAF | Pt+Co/Ni/Co/ Ru/Co/Ni/Co (SOT) | 750 | 3.0 | 2015 [51] | (+) Very fast (+) Very efficient (+) High density (+) Robust against external field |
PMA FiM | Mn4−xNixN (STT) Pt+CoGd (SOT) * | 3000 5700 | 1.2 0.42 | 2021 [52] 2020 [53,54] | (+) Ultra-fast (+) Ultra-efficient (−) Highly temperature sensitive |
2.2. Spin-Orbit Torque
2.3. Exchange-Coupling Torque
2.4. Conclusions
3. Emerging Logic Functionalities in DW Devices
3.1. Advancements of DW Devices for Boolean Logic and Unconventional Computing
3.2. Current-Driven DW Logic Circuits
3.3. Conclusions
4. DW Devices with MTJ Write and Read at the Nanoscale
4.1. Electrical Writing and Reading of DWs
4.2. Hybrid Free Layer Concept
4.3. Electrical Operation of Nanoscale DW Devices with MTJ Write and Read
4.4. Potential and Challenges of Electrically Controlled DW Logic
5. Current-Free Alternatives to SOT DW Logic
6. Conclusions: Challenges and Prospects
Author Contributions
Funding
Acknowledgments
Conflicts of Interest
Correction Statement
References
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Implementation | Functionalities | Write/Transport/Read | System | Track Width | Year [Ref.] | |
---|---|---|---|---|---|---|
Field- | IP nanowire circuit | NOT, AND, NAND, | Field/Field/ | IP | 200 nm | 2005 |
driven | OR, NOR, COPY, | MOKE-MFM-MR | [24,84,85,86] | |||
fanout, shift register, | ||||||
transistor | ||||||
Chirality-encoded | NOT, AND, NAND, | Field/Field/MFM-MTXM | IP | 120 nm | 2015 | |
OR, NOR | [87,88] | |||||
Magnetically | 2x + 1, shift register | STT/Field/TMR | PMA | 150 nm | 2018 | |
interconnected MTJs | [89] | |||||
Current- | Single MTJ | Buffer, inverter, fanout | Field/STT/TMR | IP | 400 nm | 2016 [90] |
driven | on DW track | Inverter | Oersted/SOT/TMR | PMA | 250 nm | 2021 [91] |
PMA DW circuit | NOT, NAND, NOR, | Field/SOT/MOKE-MFM | PMA | 200 nm | 2020 | |
XOR, full adder, diode | [25,92] | |||||
Magnetically | AND | STT/SOT/TMR | PMA | 180 nm | 2018 | |
interconnected MTJs | [93,94] | |||||
Optoelectronic | AND, NAND, OR, | Opto-SOT/Opto-SOT/AHE | PMA | 4 µm | 2020 | |
DW motion | NOR | [95] |
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Vermeulen, B.B.; Sorée, B.; Couet, S.; Temst, K.; Nguyen, V.D. Progress in Spin Logic Devices Based on Domain-Wall Motion. Micromachines 2024, 15, 696. https://doi.org/10.3390/mi15060696
Vermeulen BB, Sorée B, Couet S, Temst K, Nguyen VD. Progress in Spin Logic Devices Based on Domain-Wall Motion. Micromachines. 2024; 15(6):696. https://doi.org/10.3390/mi15060696
Chicago/Turabian StyleVermeulen, Bob Bert, Bart Sorée, Sebastien Couet, Kristiaan Temst, and Van Dai Nguyen. 2024. "Progress in Spin Logic Devices Based on Domain-Wall Motion" Micromachines 15, no. 6: 696. https://doi.org/10.3390/mi15060696