Thermal Analysis of THz Schottky Diode Chips with Single and Double-Row Anode Arrangement

Liu, Zenghui; Zhang, Xiaobo; Liang, Zhiwen; Wang, Fengge; Xu, Yanyan; Yang, Xien; Li, Xin; Liang, Yisheng; Lin, Lizhang; Li, Xiaodong; Zhao, Wenbo; Cao, Xin; Wang, Xinqiang; Zhang, Baijun

doi:10.3390/mi15080959

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Thermal Analysis of THz Schottky Diode Chips with Single and Double-Row Anode Arrangement

by

Zenghui Liu

^1,†,

Xiaobo Zhang

^2,†,

Zhiwen Liang

¹,

Fengge Wang

¹,

Yanyan Xu

¹,

Xien Yang

¹,

Xin Li

¹,

Yisheng Liang

¹,

Lizhang Lin

¹,

Xiaodong Li

¹,

Wenbo Zhao

¹,

Xin Cao

¹,

Xinqiang Wang

² and

Baijun Zhang

^1,*

¹

State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China

²

State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China

^*

Author to whom correspondence should be addressed.

^†

These authors contributed equally to this work.

Micromachines 2024, 15(8), 959; https://doi.org/10.3390/mi15080959 (registering DOI)

Submission received: 9 July 2024 / Revised: 24 July 2024 / Accepted: 25 July 2024 / Published: 27 July 2024

(This article belongs to the Special Issue GaN Heterostructure Devices: From Materials to Application)

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Abstract

GaN Schottky diodes show great potential in high-power terahertz frequency multipliers. The thermal characteristics of GaN Schottky diodes with single and double-row anode arrangements are described in this paper. The temperature distribution inside the Schottky diode is discussed in detail under the coupling condition of Joule heat and solid heat transfer. The effects of different substrates and substrate geometric parameters on the thermal characteristics of the Schottky diode chips with single and double-row anode arrangements are systematically analyzed. Compared with that of the chip with single-row anode arrangement, the maximum temperature of the chip with double-row anode arrangement can be reduced by 40 K at the same conditions. For chips with different substrates, chips with diamond substrates can withstand greater power dissipation when reaching the same temperature. The simulation results are instructive for the design and optimization of Schottky diodes in the terahertz field.

Keywords: Schottky diodes; thermal characteristics; terahertz; anode arrangement

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MDPI and ACS Style

Liu, Z.; Zhang, X.; Liang, Z.; Wang, F.; Xu, Y.; Yang, X.; Li, X.; Liang, Y.; Lin, L.; Li, X.; et al. Thermal Analysis of THz Schottky Diode Chips with Single and Double-Row Anode Arrangement. Micromachines 2024, 15, 959. https://doi.org/10.3390/mi15080959

AMA Style

Liu Z, Zhang X, Liang Z, Wang F, Xu Y, Yang X, Li X, Liang Y, Lin L, Li X, et al. Thermal Analysis of THz Schottky Diode Chips with Single and Double-Row Anode Arrangement. Micromachines. 2024; 15(8):959. https://doi.org/10.3390/mi15080959

Chicago/Turabian Style

Liu, Zenghui, Xiaobo Zhang, Zhiwen Liang, Fengge Wang, Yanyan Xu, Xien Yang, Xin Li, Yisheng Liang, Lizhang Lin, Xiaodong Li, and et al. 2024. "Thermal Analysis of THz Schottky Diode Chips with Single and Double-Row Anode Arrangement" Micromachines 15, no. 8: 959. https://doi.org/10.3390/mi15080959

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Thermal Analysis of THz Schottky Diode Chips with Single and Double-Row Anode Arrangement

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