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Micromachines
Volume 16
Issue 2
10.3390/mi16020188
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Article

A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations

by
Marco Boccarossa
1,2,*,
Kyrylo Melnyk
1,
Arne Benjamin Renz
1,
Peter Michael Gammon
1,
Viren Kotagama
1,
Vishal Ajit Shah
1,
Luca Maresca
2,
Andrea Irace
2 and
Marina Antoniou
1
1
School of Engineering, University of Warwick, Coventry CV4 7AL, UK
2
Department of Electrical Engineering and Information Technologies, University of Naples Federico II, Via Claudio 21, 80125 Naples, Italy
*
Author to whom correspondence should be addressed.
Micromachines 2025, 16(2), 188; https://doi.org/10.3390/mi16020188
Submission received: 23 December 2024 / Revised: 30 January 2025 / Accepted: 4 February 2025 / Published: 6 February 2025
(This article belongs to the Special Issue SiC Based Miniaturized Devices, 3rd Edition)
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Abstract

Superjunction (SJ) technology offers a promising solution to the challenges faced by silicon carbide (SiC) Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) operating at high voltages (>3 kV). However, the fabrication of SJ devices presents significant challenges due to fabrication complexity. This paper presents a comprehensive analysis of a feasible and easy-to-fabricate semi-superjunction (SSJ) design for 3.3 kV SiC MOSFETs. The proposed approach utilizes trench etching and sidewall implantation, with a tilted trench to facilitate the implantation process. Through Technology Computer-Aided Design (TCAD) simulations, we investigate the effects of the p-type sidewall on the charge balance and how it affects key performance characteristics, such as breakdown voltage (BV) and on-state resistance (RDS-ON). In particular, both planar gate (PSSJ) and trench gate (TSSJ) designs are simulated to evaluate their performance improvements over conventional planar MOSFETs. The PSSJ design achieves a 2.5% increase in BV and a 48.7% reduction in RDS-ON, while the TSSJ design further optimizes these trade-offs, with a 3.1% improvement in BV and a significant 64.8% reduction in RDS-ON compared to the benchmark. These results underscore the potential of tilted trench SSJ designs to significantly enhance the performance of SiC SSJ MOSFETs for high-voltage power electronics while simplifying fabrication and lowering costs.
Keywords: SiC MOSFET; superjunction; semi-superjunction; trench etching; sidewall implantation; tilted trench SiC MOSFET; superjunction; semi-superjunction; trench etching; sidewall implantation; tilted trench

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MDPI and ACS Style

Boccarossa, M.; Melnyk, K.; Renz, A.B.; Gammon, P.M.; Kotagama, V.; Shah, V.A.; Maresca, L.; Irace, A.; Antoniou, M. A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations. Micromachines 2025, 16, 188. https://doi.org/10.3390/mi16020188

AMA Style

Boccarossa M, Melnyk K, Renz AB, Gammon PM, Kotagama V, Shah VA, Maresca L, Irace A, Antoniou M. A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations. Micromachines. 2025; 16(2):188. https://doi.org/10.3390/mi16020188

Chicago/Turabian Style

Boccarossa, Marco, Kyrylo Melnyk, Arne Benjamin Renz, Peter Michael Gammon, Viren Kotagama, Vishal Ajit Shah, Luca Maresca, Andrea Irace, and Marina Antoniou. 2025. "A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations" Micromachines 16, no. 2: 188. https://doi.org/10.3390/mi16020188

APA Style

Boccarossa, M., Melnyk, K., Renz, A. B., Gammon, P. M., Kotagama, V., Shah, V. A., Maresca, L., Irace, A., & Antoniou, M. (2025). A 3.3 kV SiC Semi-Superjunction MOSFET with Trench Sidewall Implantations. Micromachines, 16(2), 188. https://doi.org/10.3390/mi16020188

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