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Micromachines
Volume 16
Issue 5
10.3390/mi16050506
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This is an early access version, the complete PDF, HTML, and XML versions will be available soon.
Article

Optimising (Al,Ga) (As,Bi) Quantum Well Laser Structures for Reflectance Mode Pulse Oximetry

by
Aivaras Špokas
1,2,*,
Andrea Zelioli
1,
Andrius Bičiūnas
1,
Bronislovas Čechavičius
1,
Justinas Glemža
3,
Sandra Pralgauskaitė
3,
Mindaugas Kamarauskas
1,
Virginijus Bukauskas
1,
Janis Spigulis
4,
Yi-Jen Chiu
5,
Jonas Matukas
3 and
Renata Butkutė
1,2,*
1
Center for Physical Sciences and Technology, 10257 Vilnius, Lithuania
2
Institute of Photonics and Nanotechnology, Faculty of Physics, Vilnius University, 10257 Vilnius, Lithuania
3
Institute of Applied Electrodynamics and Telecommunications, Faculty of Physics, Vilnius University, 10257 Vilnius, Lithuania
4
Biophotonics Laboratory, Institute of Atomic Physics and Spectroscopy, University of Latvia, 1004 Riga, Latvia
5
Institute of Electro-Optical Engineering, Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan
*
Authors to whom correspondence should be addressed.
Micromachines 2025, 16(5), 506; https://doi.org/10.3390/mi16050506 (registering DOI)
Submission received: 31 March 2025 / Revised: 21 April 2025 / Accepted: 24 April 2025 / Published: 26 April 2025
(This article belongs to the Special Issue III-V Optoelectronics and Semiconductor Process Technology, Second Edition)
Versions Notes

Abstract

We explore quantum well laser diodes for applications in pulse oximetry based on two material systems, namely, classical AlGaAs and a rather exotic GaAsBi, with lasing at around 800 nm and 1100 nm, respectively. These spectral regions and material families were selected due to their closely matched effective penetration depths into soft tissue. An improved design of the band structure of device active areas was tested on both material systems, yielding enhancement of the two main parameters, namely, output power and threshold current. A maximum emission power of the AlGaAs laser diode was registered at 4.9 mW (I = 60 mA, = 801 nm). For the GaAsBi-based devices, the target emission of 1106 nm was measured in pulsed mode with a peak output power of 9.4 mW (I = 3 A). The most optimized structure was based on three GaAsBi quantum wells surrounded by parabolically graded AlGaAs barriers. This structure was capable of 130 mW peak power (I = 2 A, = 1025 nm) along with a more than tenfold decrease in threshold current to 250 mA compared to a classical rectangular quantum well active region.
Keywords: GaAsBi; QW with parabolic graded barriers; laser diode GaAsBi; QW with parabolic graded barriers; laser diode

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MDPI and ACS Style

Špokas, A.; Zelioli, A.; Bičiūnas, A.; Čechavičius, B.; Glemža, J.; Pralgauskaitė, S.; Kamarauskas, M.; Bukauskas, V.; Spigulis, J.; Chiu, Y.-J.; et al. Optimising (Al,Ga) (As,Bi) Quantum Well Laser Structures for Reflectance Mode Pulse Oximetry. Micromachines 2025, 16, 506. https://doi.org/10.3390/mi16050506

AMA Style

Špokas A, Zelioli A, Bičiūnas A, Čechavičius B, Glemža J, Pralgauskaitė S, Kamarauskas M, Bukauskas V, Spigulis J, Chiu Y-J, et al. Optimising (Al,Ga) (As,Bi) Quantum Well Laser Structures for Reflectance Mode Pulse Oximetry. Micromachines. 2025; 16(5):506. https://doi.org/10.3390/mi16050506

Chicago/Turabian Style

Špokas, Aivaras, Andrea Zelioli, Andrius Bičiūnas, Bronislovas Čechavičius, Justinas Glemža, Sandra Pralgauskaitė, Mindaugas Kamarauskas, Virginijus Bukauskas, Janis Spigulis, Yi-Jen Chiu, and et al. 2025. "Optimising (Al,Ga) (As,Bi) Quantum Well Laser Structures for Reflectance Mode Pulse Oximetry" Micromachines 16, no. 5: 506. https://doi.org/10.3390/mi16050506

APA Style

Špokas, A., Zelioli, A., Bičiūnas, A., Čechavičius, B., Glemža, J., Pralgauskaitė, S., Kamarauskas, M., Bukauskas, V., Spigulis, J., Chiu, Y.-J., Matukas, J., & Butkutė, R. (2025). Optimising (Al,Ga) (As,Bi) Quantum Well Laser Structures for Reflectance Mode Pulse Oximetry. Micromachines, 16(5), 506. https://doi.org/10.3390/mi16050506

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