Li, M.; Qiu, Z.; Li, T.; Kang, Y.; Lu, S.; Hu, X.
1200V 4H-SiC MOSFET with a High-K Source Gate for Improving Third-Quadrant and High Frequency Figure of Merit Performance. Micromachines 2025, 16, 508.
https://doi.org/10.3390/mi16050508
AMA Style
Li M, Qiu Z, Li T, Kang Y, Lu S, Hu X.
1200V 4H-SiC MOSFET with a High-K Source Gate for Improving Third-Quadrant and High Frequency Figure of Merit Performance. Micromachines. 2025; 16(5):508.
https://doi.org/10.3390/mi16050508
Chicago/Turabian Style
Li, Mingyue, Zhaofeng Qiu, Tianci Li, Yi Kang, Shan Lu, and Xiarong Hu.
2025. "1200V 4H-SiC MOSFET with a High-K Source Gate for Improving Third-Quadrant and High Frequency Figure of Merit Performance" Micromachines 16, no. 5: 508.
https://doi.org/10.3390/mi16050508
APA Style
Li, M., Qiu, Z., Li, T., Kang, Y., Lu, S., & Hu, X.
(2025). 1200V 4H-SiC MOSFET with a High-K Source Gate for Improving Third-Quadrant and High Frequency Figure of Merit Performance. Micromachines, 16(5), 508.
https://doi.org/10.3390/mi16050508