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Journal: Micromachines, 2025
Volume: 16
Number: 508

Article: 1200V 4H-SiC MOSFET with a High-K Source Gate for Improving Third-Quadrant and High Frequency Figure of Merit Performance
Authors: by Mingyue Li, Zhaofeng Qiu, Tianci Li, Yi Kang, Shan Lu and Xiarong Hu
Link: https://www.mdpi.com/2072-666X/16/5/508

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