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Journal: Micromachines, 2025
Volume: 16
Number: 508
Article:
1200V 4H-SiC MOSFET with a High-K Source Gate for Improving Third-Quadrant and High Frequency Figure of Merit Performance
Authors:
by
Mingyue Li, Zhaofeng Qiu, Tianci Li, Yi Kang, Shan Lu and Xiarong Hu
Link:
https://www.mdpi.com/2072-666X/16/5/508
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