High-Speed GaN-Based Superluminescent Diode for 4.57 Gbps Visible Light Communication
, Chicheng Ma 1, Junfei Wang 1, Fangchen Hu 1, Yuqi Hou 1, Shanshan Wang 1, Junhui Hu 1, Shulan Yi 1, Yingnan Ma 1, Jianyang Shi 1,2,3, Junwen Zhang 1,2,3,4, Ziwei Li 1,2,3,4, Nan Chi 1,2,3,4, Liang Xia 5 and Chao Shen 1,2,3,4,*Round 1
Reviewer 1 Report
The recommendation are enclosed here.
Comments for author File: 
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Author Response
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Reviewer 2 Report
The manuscript presents a number of advantages. The subject of the work lies within the thematic scope of this special issue. The research topic is timely and relevant. The obtained results are valuable, especially those concerning the use of SLDs in data communication experiments.
However, the paper has also several weakness.
In part 2 “Materials and Method” basic information on fabrication and processing of SLD semiconductor structure is missing (type of GaN substrate, thicknesses composition and doping of epilayers, chip dimensions, ohmic contacts, plasma etching, etc.). Fig. 1a, b are not informative.
Part 4 “Discussion”, in its current form, is an extension of the state-of-the art. To be useful, the discussion of the results should consider relationships between device structure design, fabrication process and SLD performance and indicate what was the main factor distinguishing the obtained SLDs from the others shown in Table 1, enabling the progress.
Author Response
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Round 2
Reviewer 2 Report
The revised manuscript can be published in present form.
