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Journal: Crystals, 2024
Volume: 14
Number: 253

Article: High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology
Authors: by Bohan Guo, Guohao Yu, Li Zhang, Jiaan Zhou, Zheming Wang, Runxian Xing, An Yang, Yu Li, Bosen Liu, Xiaohong Zeng, Zhongkai Du, Xuguang Deng, Zhongming Zeng and Baoshun Zhang
Link: https://www.mdpi.com/2073-4352/14/3/253

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